Barley protoplast was immobilized on poly(dially dimethylammonium) (PDADMAC) modified gold electrode via the electrostatic attraction between the positively charged amine groups of PDADMAC and the negatively charged b...Barley protoplast was immobilized on poly(dially dimethylammonium) (PDADMAC) modified gold electrode via the electrostatic attraction between the positively charged amine groups of PDADMAC and the negatively charged barley protoplast. STM image reveals that PDADMAC/Au(111) surface displays a nano organized dot(4-6 nm) array structure. The processes of the PDADMAC adsorption and of the barley protoplast immobilization were monitored from the in situ QCM frequency change. The effects of the adsorbed mass and of the density and viscosity of medium on the frequency change of QCM were discussed, respectively. The QCM result shows that the thickness of the adsorbed PDADMAC layer is 2.4 nm.展开更多
TN364.2 98031903用于电路模拟的PIN雪崩光电二极管模型=PINavalanche photodiode model for circuit simula-tion[刊.中]/陈维友,刘式墉(吉林大学.吉林,长春(130023))∥固体电子学研究与进展.—1997,17(3).—242—249针对PIN结构的特殊...TN364.2 98031903用于电路模拟的PIN雪崩光电二极管模型=PINavalanche photodiode model for circuit simula-tion[刊.中]/陈维友,刘式墉(吉林大学.吉林,长春(130023))∥固体电子学研究与进展.—1997,17(3).—242—249针对PIN结构的特殊性,作了适当的合理近似,考虑了p,n区少子扩散,i区载流子漂移,给出一个完整的PIN雪崩光电二极管电路模型。它可用于直。展开更多
文摘Barley protoplast was immobilized on poly(dially dimethylammonium) (PDADMAC) modified gold electrode via the electrostatic attraction between the positively charged amine groups of PDADMAC and the negatively charged barley protoplast. STM image reveals that PDADMAC/Au(111) surface displays a nano organized dot(4-6 nm) array structure. The processes of the PDADMAC adsorption and of the barley protoplast immobilization were monitored from the in situ QCM frequency change. The effects of the adsorbed mass and of the density and viscosity of medium on the frequency change of QCM were discussed, respectively. The QCM result shows that the thickness of the adsorbed PDADMAC layer is 2.4 nm.
文摘TN364.2 98031903用于电路模拟的PIN雪崩光电二极管模型=PINavalanche photodiode model for circuit simula-tion[刊.中]/陈维友,刘式墉(吉林大学.吉林,长春(130023))∥固体电子学研究与进展.—1997,17(3).—242—249针对PIN结构的特殊性,作了适当的合理近似,考虑了p,n区少子扩散,i区载流子漂移,给出一个完整的PIN雪崩光电二极管电路模型。它可用于直。