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高热预算三维存储工艺中表面沟道PMOS研究
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作者 汪宗武 李雪 +6 位作者 田武 许文山 孙超 董洁琼 江宁 夏志良 霍宗亮 《微电子学》 CAS 北大核心 2019年第3期427-430,446,共5页
采用标准三维存储器工艺,制备作为外围器件的表面沟道PMOS管。存储单元制备过程中的高热预算对p型掺杂的多晶栅影响很大,尤其是金属硅化物作为栅极接触材料的p型多晶硅。对影响表面沟道PMOS管性能的因素进行研究,发现多晶硅侧墙氧化温... 采用标准三维存储器工艺,制备作为外围器件的表面沟道PMOS管。存储单元制备过程中的高热预算对p型掺杂的多晶栅影响很大,尤其是金属硅化物作为栅极接触材料的p型多晶硅。对影响表面沟道PMOS管性能的因素进行研究,发现多晶硅侧墙氧化温度主导器件的性能。高温侧墙氧化引起严重的多晶硅耗尽,并导致高阈值电压。电容-电压曲线和二次离子质谱验证了这个现象。通过工艺优化,有效抑制了多晶硅耗尽程度,实现了可用于三维存储器的高性能表面沟道PMOS管。在1.2 V工作电压下,PMOS管的饱和电流可达120μA/μm,漏电流低于1 pA/μm。 展开更多
关键词 三维存储器 硼分凝 多晶硅 栅耗尽 表面沟道低压PMOS管
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油石包角与沟道表面质量的关系 被引量:2
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作者 张胜男 蒙延芬 王国宏 《轴承》 北大核心 2000年第8期34-35,共2页
通过正交试验法分析了油石包角等因素对精研后沟道表面的影响。指出了最佳油石包角为 55°。附图 3幅。
关键词 轴承 油石包角 表面质量 精研
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红外区熔再结晶SOI GE_XSi_(1-X)合金沟道P-MOSFET的研究
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作者 付军 栾洪发 +2 位作者 田立林 钱佩信 周均铭 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1997年第8期603-608,共6页
在红外区熔再结晶SOI材料上用MBE的方法形成Si/GexSi1-x/Si量子阱结构.在此基础上,采用常规的P-MOS工艺制造出了SOIGexSi1-x合金沟道P-MOSFET.为避免GexSi1-x合金材料发生蜕化,MBE以后除快速热退火(RTA)以外的所有工艺温度... 在红外区熔再结晶SOI材料上用MBE的方法形成Si/GexSi1-x/Si量子阱结构.在此基础上,采用常规的P-MOS工艺制造出了SOIGexSi1-x合金沟道P-MOSFET.为避免GexSi1-x合金材料发生蜕化,MBE以后除快速热退火(RTA)以外的所有工艺温度都不超过800℃.直流特性的测量结果表明,与普通Si沟道器件相比,GexSi1-x合金沟道器件的沟道载流子迁移率有所提高.而且,这种器件在性能的进一步提高方面存在着相当大的潜力. 展开更多
关键词 红外区熔再结晶 SOI材料 表面沟道 半导体
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Hg_(1-x)Cd_xTe光伏探测器的表面漏电流机制及其钝化 被引量:4
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作者 孙涛 《红外》 CAS 2004年第2期17-24,45,共9页
表面漏电流能对Hg1-xCdxTe光伏探测器性能产生很大的影响,因此选择合适的钝化工艺尤其重要。本文主要论述了Hg1-xCdxTe光伏探测器表面漏电流机制及其钝化技术的发展状况。
关键词 光伏探测器 表面漏电流 钝化工艺 动态阻抗 热噪声 暗电流 电流 表面电流 表面沟道电流
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磨削的轴承沟道表面微观不平度建模与分析
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作者 林述温 卞铭健 《福州大学学报(自然科学版)》 CAS CSCD 1997年第4期73-77,共5页
在分析轴承内圈沟道磨削机理的基础上,确定影响磨削表面微观不平度平均间距Sm的因素,按混合型正交表设计了多因素试验方案.通过试验数据逐步回归,建立磨削表面微观不平度平均间距Sm与工艺参数关系的最优回归模型.对Sm数学模... 在分析轴承内圈沟道磨削机理的基础上,确定影响磨削表面微观不平度平均间距Sm的因素,按混合型正交表设计了多因素试验方案.通过试验数据逐步回归,建立磨削表面微观不平度平均间距Sm与工艺参数关系的最优回归模型.对Sm数学模型多维分析得出几点重要结论. 展开更多
关键词 轴承 磨削 微观不平度 表面 滚动轴承
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The Bipolar Field-Effect Transistor: III.Short Channel Electrochemical Current Theory (Two-MOS-Gates on Pure-Base)
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作者 揭斌斌 薩支唐 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期1-11,共11页
This paper describes the short channel theory of the bipolar field-effect transistor (BiFET) by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole em... This paper describes the short channel theory of the bipolar field-effect transistor (BiFET) by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported. 展开更多
关键词 bipolar field-effect transistor theory MOS field-effect transistor simultaneous electron and hole surface andvolume channels surface potential short channel theory double-gate pure-base
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The Bipolar Field-Effect Transistor:Ⅳ.Short Channel Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)
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作者 揭斌斌 薩支唐 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第2期193-200,共8页
This paper gives the short channel analytical theory of the bipolar field-effect transistor (BiFET) with the drift and diffusion currents separately computed in the analytical theory. As in the last-month paper whic... This paper gives the short channel analytical theory of the bipolar field-effect transistor (BiFET) with the drift and diffusion currents separately computed in the analytical theory. As in the last-month paper which represented the drift and diffusion current by the single electrochemical (potential-gradient) current, the two-dimensional transistor is partitioned into two sections, the source and drain sections, each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is then obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and the drift and diffusion components of the electron-channel and hole-channel currents and output and transfer conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the two-section short-channel theory from the one-section long-channel theory are described. 展开更多
关键词 bipolar field-effect transistor theory MOS field-effect transistor simultaneous electron and hole surface and volume channels surface potential two-section short-channel theory double-gate pure-base
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The Bipolar Field-Effect Transistor:Ⅰ.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)
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作者 薩支唐 揭斌斌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第11期1661-1673,共13页
This paper describes the bipolar field-effect transistor (BiFET) and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis ... This paper describes the bipolar field-effect transistor (BiFET) and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis employs the parametric surface-electric-potential and the electrochemical (quasi-Fermi) potential-gradient driving force to compute the current. Output and transfer D. C. current and conductance versus voltage are presented over practi- cal ranges of terminal D. C. voltages and device parameters. Electron and hole surface channel currents are pres- ent simultaneously, a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory. 展开更多
关键词 bipolar field-effect transistor theory MOS field-effect transistor bipolar junction transistor simul-taneous hole and electron surface channel~ volume channel surface potential
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Bipolar Theory of MOS Field-Effect Transistors and Experiments
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作者 薩支唐 揭斌斌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第10期1497-1502,共6页
The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate na... The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized. 展开更多
关键词 unipolar FET theory bipolar FET theory simultaneous hole and electron surface channels volume channel DOUBLE-GATE pure-base
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The Bipolar Field-Effect Transistor:II.Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)
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作者 薩支唐 揭斌斌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第12期1849-1859,共11页
This paper describes the drift-diffusion theory of the bipolar field-effect transistor (BiFET) with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin-pure-base. Analytical solution is obt... This paper describes the drift-diffusion theory of the bipolar field-effect transistor (BiFET) with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin-pure-base. Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric sur- face-electric-potential. Total and component output and transfer currents and conductances versus D. C. voltages from the drift-diffusion theory, and their deviations from the electrochemical (quasi-Fermi) potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contri- bution from the longitudinal gradient of the square of the transverse electric field is shown. 展开更多
关键词 bipolar field-effect transistor theory MOS field-effect transistor simultaneous electron and holesurface and volume channels surface potential~ longitudinal gradient of transverse electric field
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The Theory of Field-Effect Transistors:XI. The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)
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作者 薩支唐 揭斌斌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第3期397-409,共13页
The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transvers... The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transverse electric fields. It has been known as the unipolar field-effect transistor for 55-years since Shockley's 1952 invention,because the electron-current theory inevitably neglected the hole current from over-specified internal and boundary conditions, such as the electrical neutrality and the constant hole-electrochemical-potential, resulting in erroneous solutions of the internal and terminal electrical characteristics from the electron channel current alone, which are in gross error when the neglected hole current becomes comparable to the electron current, both in subthreshold and strong inversion. This report presents the general theory, that includes both electron and hole channels and currents. The rectangular ( x, y, z) parallelepiped transistors,uniform in the width direction (z-axis),with one or two MOS gates on thin and thick,and pure and impure base, are used to illustrate the two-dimensional effects and the correct internal and boundary conditions for the electric and the electron and hole electrochemical potentials. Complete analytical equations of the DC current-voltage characteristics of four common MOS transistor structures are derived without over-specification: the 1-gate on semi-infinite-thick impure-base (the traditional bulk transistor), the 1-gate on thin impure-silicon layer over oxide-insulated silicon bulk (SOI) ,the 1-gate on thin impure-silicon layer deposited on insulating glass (SOI TFT), and the 2-gates on thin pure-base (FinFETs). 展开更多
关键词 bipolar field-effect transistor theory MOS field-effect transistor simultaneous electron and hole surface and volume channels and currents surface potential two-section short-channel theory double-gate impure-base theory
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部分重叠双栅MOSFET特性的研究
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作者 韩名君 赵阳 柯导明 《安徽大学学报(自然科学版)》 CAS 北大核心 2012年第2期43-47,共5页
研究一种具有部分重叠双栅结构MOSFET器件模型,并将其与类似的分裂双栅结构MOSFET及普通栅结构MOSFET器件进行比较,利用MEDICI软件对该结构进行仿真.通过仿真可知:部分重叠双栅MOSFET器件通过沟道电场的调节,可降低短沟效应和等效栅电... 研究一种具有部分重叠双栅结构MOSFET器件模型,并将其与类似的分裂双栅结构MOSFET及普通栅结构MOSFET器件进行比较,利用MEDICI软件对该结构进行仿真.通过仿真可知:部分重叠双栅MOSFET器件通过沟道电场的调节,可降低短沟效应和等效栅电容、提高击穿电压,跨导可由栅压调节,阈值电压随沟道缩短而下降的变化率在文中讨论的3种结构中最小. 展开更多
关键词 部分重叠双栅 分裂双栅 效应 栅电容 表面电场
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基于双栅PMOSFET模型的硼穿通分析方法
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作者 石晶 钱文生 刘冬华 《微电子学》 CAS CSCD 北大核心 2013年第2期270-273,共4页
随着栅氧化层厚度的不断减小,硼穿通问题变得越来越严重。特别是在表面沟道器件中,非常容易出现硼穿通现象。为了减小P型多晶硅栅电极中硼穿通的影响,需要明确多晶硅栅电极中硼穿通与栅氧化层厚度之间的关系。提出的双栅PMOSFET模型将P... 随着栅氧化层厚度的不断减小,硼穿通问题变得越来越严重。特别是在表面沟道器件中,非常容易出现硼穿通现象。为了减小P型多晶硅栅电极中硼穿通的影响,需要明确多晶硅栅电极中硼穿通与栅氧化层厚度之间的关系。提出的双栅PMOSFET模型将P型多晶硅栅极与N型多晶硅栅极的功函数之差与阈值电压差值进行对比,完成了硼穿通的判定。通过优化热氧化条件,采用N2O热处理,能够有效改善薄栅氧化层PMOSFET中的硼穿通问题。 展开更多
关键词 硼穿通 双栅PMOSFET 表面沟道器件
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射频低压器件物理和工艺技术的综合分析
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作者 鲍荣生 《中国集成电路》 2007年第5期72-78,共7页
本文的射频是指手机工作频率fo=0.9GHz和1.8GHz,低电源电压是3~5V;众所周知,工作频率和特征频率fT密切相关,一般希望fo/fT是10%;现代的多晶硅发射区工艺技术可以控制基区宽度小到低于100nm,从器件物理分析可以满足手机要求的fT的期望值... 本文的射频是指手机工作频率fo=0.9GHz和1.8GHz,低电源电压是3~5V;众所周知,工作频率和特征频率fT密切相关,一般希望fo/fT是10%;现代的多晶硅发射区工艺技术可以控制基区宽度小到低于100nm,从器件物理分析可以满足手机要求的fT的期望值;结合工艺技术的大量数据,还可以得到器件的特征尺寸即发射区宽度,从大量数据看,发射区宽度达到亚微米是必要的;低压是为了适应重量轻、体积小、用户使用方便,低压下MOS器件为了保持高的运行速度,其开启电压要相应降低,应该达到或小于电源电压的20%;这样PMOS管开启VTP下降到-0.6~-1V或者绝对值更小,在多晶硅栅仍然采用传统的工艺N+多晶硅栅情况下,PMOS管的结构由一般教科书上介绍的经典的强反型表面沟道演变为埋沟,沟道区表面不是N型而是形成一层P型薄薄的扩散层,即形成纵向PN结,这时P型区厚度和浓度有利于|VTP|绝对值的下降,同时要避免发生PMOS管变成耗尽管,可能影响合格率。 展开更多
关键词 发射区 器件物理 特征尺寸 集电结电容 基区 开启电压 杂质浓度分布 表面沟道 多晶硅栅 工艺技术 低压 电压
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The Bipolar Field-Effect Transistor:Ⅵ.The CMOS Voltage Inverter Circuit(Two-MOS-Gates on Pure-Base)
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作者 揭斌斌 薩支唐 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第11期2079-2087,共9页
This paper reports the DC steady-state voltage and current transfer characteristics and power dissipation of the Complimentary Metal-Oxide-Silicon (CMOS) voltage-inverter circuit using one physical Bipolar Field-Eff... This paper reports the DC steady-state voltage and current transfer characteristics and power dissipation of the Complimentary Metal-Oxide-Silicon (CMOS) voltage-inverter circuit using one physical Bipolar Field-Effect Transistor (BiFET) of nanometer dimensions. The electrical characteristics are numerically obtained by solving the five partial dif- ferential equations for the transistor structure of two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both ends of the thin base. Internal and CMOS boundary conditions are used on the three potentials (electrostatic and electron and hole electrochemical potentials). Families of curves are rapidly computed using a dual-processor personal computer running the 64-bit FORTRAN on the Windows XP operating system. 展开更多
关键词 bipolar field-effect transistor theory surface channel volume channel CMOS inverter CMOS-BiFET
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