Tin oxide thin films were deposited by direct current （DC） reactive sputtering at gas pressures of 0.015 mbar - 0.15 mbar. The crystalline structure and surface morphology of the prepared SnO2 films were introduced ...Tin oxide thin films were deposited by direct current （DC） reactive sputtering at gas pressures of 0.015 mbar - 0.15 mbar. The crystalline structure and surface morphology of the prepared SnO2 films were introduced by X-ray diffraction （XRD） and atomic force microscopy （AFM）. These films showed preferred orientation in the （110） plane. Due to AFM micrographs, the grain size increased non-uniformly as the working gas pressure increased.展开更多
文摘Tin oxide thin films were deposited by direct current （DC） reactive sputtering at gas pressures of 0.015 mbar - 0.15 mbar. The crystalline structure and surface morphology of the prepared SnO2 films were introduced by X-ray diffraction （XRD） and atomic force microscopy （AFM）. These films showed preferred orientation in the （110） plane. Due to AFM micrographs, the grain size increased non-uniformly as the working gas pressure increased.
