A novel substrate current model is proposed for submicron and deep-submicron li ghtly-doped-drain (LDD) n-MOSFET,with the emphasis on accurate description of the characteristics length by taking the effects of channe...A novel substrate current model is proposed for submicron and deep-submicron li ghtly-doped-drain (LDD) n-MOSFET,with the emphasis on accurate description of the characteristics length by taking the effects of channel length and bias int o account.This is due to that the characteristics lenth significantly affects th e maximum lateral electric field and the length of velocity saturation region,bo th of which are very important in modeling the drain current and the substrate c urrent.The comparison between simulations and experiments shows a good predictio n of the model for submicron and deep-submicron LDD MOSFET.Moreover,the analyti cal model is suitable for descgn of devices as it is low in computation consumpt ion.展开更多
A compact model for LDD MOSFET is proposed,which involves the hyperbolic tangent function description and the physics of device with emphasis on the substrate current modeling.The simulation results demonstrate good ...A compact model for LDD MOSFET is proposed,which involves the hyperbolic tangent function description and the physics of device with emphasis on the substrate current modeling.The simulation results demonstrate good agreement with measurement,and show that deep submicron LDD MOSFET has larger substrate current than submicron device does.The improved model costs low computation consumption,and is effective in manifestation of hot carrier effect and other effects in deep submicron devices,in turn is suitable for design and reliability analysis of scaling down devices.展开更多
The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effect...The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor （6 turn, 3 060 μm in length） fabricated on low （ 1 Ω. cm） and high resistivity（ 1 000 Ω.cm） silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.展开更多
As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the mo...As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.展开更多
Y2000-62007-2 0018093发射极开关晶闸管(ETO)介绍:单位开关增益容量的数值与试验证明=Introducing the emitter turn-offthyristor(ETO):numerical and experimental demon-stration of unity turn-off gain capability[会,英]/Li,Y.X....Y2000-62007-2 0018093发射极开关晶闸管(ETO)介绍:单位开关增益容量的数值与试验证明=Introducing the emitter turn-offthyristor(ETO):numerical and experimental demon-stration of unity turn-off gain capability[会,英]/Li,Y.X.&Huang,A.Q.//Ⅵ IEEE International PowerElectronics Congress.—2～9(PC)展开更多
A full solution of two-dimensional Navier-Stokes and energy equation was conducted numerically to analyze the natural convection of the horizontal strip with an adiabatic substrate. The main features of such convectio...A full solution of two-dimensional Navier-Stokes and energy equation was conducted numerically to analyze the natural convection of the horizontal strip with an adiabatic substrate. The main features of such convection are: (i) the leading and trailing edge effect, (ii) the non-boundary layer effect, and (iii) the side edge effect. The results are compared with the boundary layer theory and experimental data.展开更多
文摘A novel substrate current model is proposed for submicron and deep-submicron li ghtly-doped-drain (LDD) n-MOSFET,with the emphasis on accurate description of the characteristics length by taking the effects of channel length and bias int o account.This is due to that the characteristics lenth significantly affects th e maximum lateral electric field and the length of velocity saturation region,bo th of which are very important in modeling the drain current and the substrate c urrent.The comparison between simulations and experiments shows a good predictio n of the model for submicron and deep-submicron LDD MOSFET.Moreover,the analyti cal model is suitable for descgn of devices as it is low in computation consumpt ion.
文摘A compact model for LDD MOSFET is proposed,which involves the hyperbolic tangent function description and the physics of device with emphasis on the substrate current modeling.The simulation results demonstrate good agreement with measurement,and show that deep submicron LDD MOSFET has larger substrate current than submicron device does.The improved model costs low computation consumption,and is effective in manifestation of hot carrier effect and other effects in deep submicron devices,in turn is suitable for design and reliability analysis of scaling down devices.
基金The National Natural Science Foundation of China(No.60676043)the National High Technology Research and Development Program of China(863Program)(No.2007AA04Z328)
文摘The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor （6 turn, 3 060 μm in length） fabricated on low （ 1 Ω. cm） and high resistivity（ 1 000 Ω.cm） silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.
基金Project(61074051)supported by the National Natural Science Foundation of ChinaProject(10C0709)supported by the Scientific Research Fund of Education Department of Hunan Province,ChinaProject(2011GK3058)supported by the Science and Technology Plan of Hunan Province,China
文摘As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.
文摘Y2000-62007-2 0018093发射极开关晶闸管(ETO)介绍:单位开关增益容量的数值与试验证明=Introducing the emitter turn-offthyristor(ETO):numerical and experimental demon-stration of unity turn-off gain capability[会,英]/Li,Y.X.&Huang,A.Q.//Ⅵ IEEE International PowerElectronics Congress.—2～9(PC)
文摘A full solution of two-dimensional Navier-Stokes and energy equation was conducted numerically to analyze the natural convection of the horizontal strip with an adiabatic substrate. The main features of such convection are: (i) the leading and trailing edge effect, (ii) the non-boundary layer effect, and (iii) the side edge effect. The results are compared with the boundary layer theory and experimental data.
