O484.1 98031877Si(Ⅲ)衬底上IBE法外延生长B—FeSi<sub>2</sub>薄膜的研究=Study of iron dissilicide(B—FeSi<sub>2</sub>)epitaxialthin films on Si(Ⅲ)substrafe by mass—ana-lyzed low—energy i...O484.1 98031877Si(Ⅲ)衬底上IBE法外延生长B—FeSi<sub>2</sub>薄膜的研究=Study of iron dissilicide(B—FeSi<sub>2</sub>)epitaxialthin films on Si(Ⅲ)substrafe by mass—ana-lyzed low—energy ion beam epitaxy[刊,中]/李慧,马辉,丁维清(北京师范大学分析测试中心.北京(100875)),秦复光(中科院半导体所.北京(100083))展开更多
文摘O484.1 98031877Si(Ⅲ)衬底上IBE法外延生长B—FeSi<sub>2</sub>薄膜的研究=Study of iron dissilicide(B—FeSi<sub>2</sub>)epitaxialthin films on Si(Ⅲ)substrafe by mass—ana-lyzed low—energy ion beam epitaxy[刊,中]/李慧,马辉,丁维清(北京师范大学分析测试中心.北京(100875)),秦复光(中科院半导体所.北京(100083))