为提高串联谐振型故障限流器(series resonant fault current limiter,SRFCL)旁路电路的可靠性,减小谐振电容的氧化锌避雷器(MOV)能量消耗,研究了晶闸管阀自触发保护动作电压阈值设计方法。限流器控制器失灵是最恶劣的故障态,只能依赖...为提高串联谐振型故障限流器(series resonant fault current limiter,SRFCL)旁路电路的可靠性,减小谐振电容的氧化锌避雷器(MOV)能量消耗,研究了晶闸管阀自触发保护动作电压阈值设计方法。限流器控制器失灵是最恶劣的故障态,只能依赖晶闸管阀自触发保护即击穿二极管触发晶闸管(break over diode,BOD)。设计了BOD动作时序,从动作时间和避雷器能耗角度分析阈值影响因素。BOD动作电压阈值决定了晶闸管阀过电压保护水平和触发时间。电压阈值设置低,BOD保护会和保护判据竞争;电压阈值设置高,避雷器能耗水平会提高。以华东电网限流器示范工程为背景,建立限流器仿真模型,通过大量仿真计算,总结了电压阈值变化对避雷器能耗水平影响规律,提出了电压阈值设计指标。研究结果对工程设计具有指导意义。展开更多
Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low...Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.展开更多
The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using...The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design （ISE-TCAD）. Various thicknesses （6, 7, 8, 10, 12 rim） of AlxInyGa1-x-yN barriers with （3 nm） Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current （lth）, and the highest output power （Pop） were 116 mA and 196 mW respectively, at barriers thickness of 6 nm, Al mole fraction of 10% and In mole fraction of 1%, at an emission wavelength of 359.6 nm.展开更多
Traditional CMOS technology faces some fundamental physical limitations. Therefore, it has become very important for the integrated circuit industry to continue to develop modem devices and new design methods. The thr...Traditional CMOS technology faces some fundamental physical limitations. Therefore, it has become very important for the integrated circuit industry to continue to develop modem devices and new design methods. The threshold logic gate has attracted much attention because of its powerful logic function. The resonant tunneling diode （RTD） is well suited for imple- menting the threshold logic gate because of its high-speed switching capability, negative differential resistance （NDR） charac- teristic, and functional versatility. In this paper, based on the Reed-Muller （RM） algebraic system, a novel method is proposed to convert three-variable non-threshold functions to the XOR of multiple threshold functions, which is simple and has a program- mable implementation. With this approach, all three-variable non-threshold functions can be presented by the XOR of two threshold functions, except for two special functions. On this basis, a novel three-variable universal logic gate （ULG3） is proposed, composed of two RTD-based universal threshold logic gates （UTLG） and an RTD-based three-variable XOR gate （XOR3）. The ULG3 has a simple structure, and a simple method is presented to implement all three-variable functions using one ULG3. Thus, the proposed ULG3 provides a new efficient universal logic gate to implement RTD-based arbitrary n-variable functions.展开更多
This paper describes a new method to design a laser mirror with high reflectivity, wide reflection bandwidth and high laser- induced damage threshold. The mirror is constructed by three materials of HfO/TiO2/SiO2 base...This paper describes a new method to design a laser mirror with high reflectivity, wide reflection bandwidth and high laser- induced damage threshold. The mirror is constructed by three materials of HfO/TiO2/SiO2 based on electric field and temperature field distribution characteristics of all-dielectric laser high reflector. TiO/SiO2 stacks act as the high reflector （HR） and broaden the reflection bandwidth, while HfO2/SiO2 stacks are used for increasing the laser resistance. The HfO/ TiO/SiO2 laser mirror with 34 layers is fabricated by a novel remote plasma sputtering deposition. The damage threshold of zero damage probability for the new mirror is up to 39.6 J/cm^2 （1064 nm, 12 ns）. The possible laser damage mechanism of the mirror is discussed.展开更多
文摘为提高串联谐振型故障限流器(series resonant fault current limiter,SRFCL)旁路电路的可靠性,减小谐振电容的氧化锌避雷器(MOV)能量消耗,研究了晶闸管阀自触发保护动作电压阈值设计方法。限流器控制器失灵是最恶劣的故障态,只能依赖晶闸管阀自触发保护即击穿二极管触发晶闸管(break over diode,BOD)。设计了BOD动作时序,从动作时间和避雷器能耗角度分析阈值影响因素。BOD动作电压阈值决定了晶闸管阀过电压保护水平和触发时间。电压阈值设置低,BOD保护会和保护判据竞争;电压阈值设置高,避雷器能耗水平会提高。以华东电网限流器示范工程为背景,建立限流器仿真模型,通过大量仿真计算,总结了电压阈值变化对避雷器能耗水平影响规律,提出了电压阈值设计指标。研究结果对工程设计具有指导意义。
文摘Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.
基金conducted under Science Fund,Cycle 2007,of The Ministry of Science,Technology and Innovation,MalaysiaThe financial support from Universiti Sains Malaysia is gratefully acknowledged
文摘The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design （ISE-TCAD）. Various thicknesses （6, 7, 8, 10, 12 rim） of AlxInyGa1-x-yN barriers with （3 nm） Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current （lth）, and the highest output power （Pop） were 116 mA and 196 mW respectively, at barriers thickness of 6 nm, Al mole fraction of 10% and In mole fraction of 1%, at an emission wavelength of 359.6 nm.
基金supported by the National Natural Science Foundation of China(Nos.61271124 and 61471314)the Zhejiang Provincial Natural Science Foundation of China(Nos.LY13F010001 and LY15F010011)
文摘Traditional CMOS technology faces some fundamental physical limitations. Therefore, it has become very important for the integrated circuit industry to continue to develop modem devices and new design methods. The threshold logic gate has attracted much attention because of its powerful logic function. The resonant tunneling diode （RTD） is well suited for imple- menting the threshold logic gate because of its high-speed switching capability, negative differential resistance （NDR） charac- teristic, and functional versatility. In this paper, based on the Reed-Muller （RM） algebraic system, a novel method is proposed to convert three-variable non-threshold functions to the XOR of multiple threshold functions, which is simple and has a program- mable implementation. With this approach, all three-variable non-threshold functions can be presented by the XOR of two threshold functions, except for two special functions. On this basis, a novel three-variable universal logic gate （ULG3） is proposed, composed of two RTD-based universal threshold logic gates （UTLG） and an RTD-based three-variable XOR gate （XOR3）. The ULG3 has a simple structure, and a simple method is presented to implement all three-variable functions using one ULG3. Thus, the proposed ULG3 provides a new efficient universal logic gate to implement RTD-based arbitrary n-variable functions.
基金supported by the National Natural Science Foundation of China (No.50802080)the Natural Science Foundation of Fujian Province of China (No.2010J01349)
文摘This paper describes a new method to design a laser mirror with high reflectivity, wide reflection bandwidth and high laser- induced damage threshold. The mirror is constructed by three materials of HfO/TiO2/SiO2 based on electric field and temperature field distribution characteristics of all-dielectric laser high reflector. TiO/SiO2 stacks act as the high reflector （HR） and broaden the reflection bandwidth, while HfO2/SiO2 stacks are used for increasing the laser resistance. The HfO/ TiO/SiO2 laser mirror with 34 layers is fabricated by a novel remote plasma sputtering deposition. The damage threshold of zero damage probability for the new mirror is up to 39.6 J/cm^2 （1064 nm, 12 ns）. The possible laser damage mechanism of the mirror is discussed.
