用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件...用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件下 ,于常温下测量了光调制反射光谱 ,发现各单元的子带间跃迁能量最大变化范围可达80 me V .展开更多
本文报道了空间差分光调制反射光谱 ,指出了它与常规光调制反射谱的区别。与常规光调制反射光谱相比较 ,它具有更好的信噪比和灵敏度。利用该光谱方法对 Ga As/ Al Ga As量子阱的实验测量结果表明 ,空间差分光调制反射光谱具有丰富的光...本文报道了空间差分光调制反射光谱 ,指出了它与常规光调制反射谱的区别。与常规光调制反射光谱相比较 ,它具有更好的信噪比和灵敏度。利用该光谱方法对 Ga As/ Al Ga As量子阱的实验测量结果表明 ,空间差分光调制反射光谱具有丰富的光谱结构。展开更多
The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline （PAN） film. The relation between the performance and internal ba...The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline （PAN） film. The relation between the performance and internal band structure of such film-covered PAN/CdSe electrode was studied by the electrochemical modulation reflectance spectrum （EMRS）. EMRS of both CdSe and PAN/CdSe electrodes in K4Fe（CN）6/K3Fe（CN）6 solution exhibited typical France-Keidysh oscillations, by which the values of the energy gap and flat band potential were determined. The EMRS results indicated that the energy band structure of CdSe electrode was not changed after coated with PAN film, so that the photoelectrochemical characteristic of PAN/CdSe electrode was rather similar to that of CdSe electrode.展开更多
文摘用分子束外延系统 (MBE)生长了 Ga As/ Al Ga As非对称耦合双量子阱 (ACDQW) ,用组合离子注入的方法 ,在同一块衬底上获得了不同注入离子 As+ 、 H+ 和不同注入剂量的 Ga As/ Al Ga As非对称耦合双量子阱单元 ,在未经快速热退火的条件下 ,于常温下测量了光调制反射光谱 ,发现各单元的子带间跃迁能量最大变化范围可达80 me V .
文摘The photo-corrosion of electrodeposited polycrystalline CdSe electrode was inhibited effectively by coating a thin layer of the conductive polyaniline （PAN） film. The relation between the performance and internal band structure of such film-covered PAN/CdSe electrode was studied by the electrochemical modulation reflectance spectrum （EMRS）. EMRS of both CdSe and PAN/CdSe electrodes in K4Fe（CN）6/K3Fe（CN）6 solution exhibited typical France-Keidysh oscillations, by which the values of the energy gap and flat band potential were determined. The EMRS results indicated that the energy band structure of CdSe electrode was not changed after coated with PAN film, so that the photoelectrochemical characteristic of PAN/CdSe electrode was rather similar to that of CdSe electrode.
