This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal...This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal/RF CMOS technology. The design methodologies and approaches for the optimization of the ICs are presented. The first design is optimized for mixed-signal transistor, oscillated at 2.64 GHz with a phase noise of -93.5 dBc/Hz at 500 kHz offset. The second one optimized for RF transistor, using the same architecture, oscillated at 2.61 GHz with a phase noise of -95.8 dBc/Hz at 500 kHz offset. Under a 2 V supply, the power dissipation is 8 mW, and the maximum buffered output power for mixed-signal and RF transistor are -7 dBm and -5.4 dBm, respectively. Both kinds of oscillators make use of on-chip components only, allowing for simple and robust integration.展开更多
An accurate 1.08GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation tech...An accurate 1.08GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation technique,the frequency tuning curves agree well with the experiment.At a 3.3V supply,the LC-VCO measures a phase noise of -82.2dBc/Hz at a 10kHz frequency offset while dissipating 3.1mA current.The chip size is 0.86mm×0.82mm.展开更多
基金TheNationalHighTechnologyResearchandDevelopmentProgramofChina (863Program ) (No .2 0 0 2AA1Z160 0 )
文摘This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal/RF CMOS technology. The design methodologies and approaches for the optimization of the ICs are presented. The first design is optimized for mixed-signal transistor, oscillated at 2.64 GHz with a phase noise of -93.5 dBc/Hz at 500 kHz offset. The second one optimized for RF transistor, using the same architecture, oscillated at 2.61 GHz with a phase noise of -95.8 dBc/Hz at 500 kHz offset. Under a 2 V supply, the power dissipation is 8 mW, and the maximum buffered output power for mixed-signal and RF transistor are -7 dBm and -5.4 dBm, respectively. Both kinds of oscillators make use of on-chip components only, allowing for simple and robust integration.
文摘An accurate 1.08GHz CMOS LC voltage-controlled oscillator is implemented in a 0.35μm standard 2P4M CMOS process.A new convenient method of calculating oscillator period is presented.With this period calculation technique,the frequency tuning curves agree well with the experiment.At a 3.3V supply,the LC-VCO measures a phase noise of -82.2dBc/Hz at a 10kHz frequency offset while dissipating 3.1mA current.The chip size is 0.86mm×0.82mm.
