The phenomenon of stochastic resonance （SR） based on the correlation coefficient in a parallel array of threshold devices is discussed. For four representative noises： the Gaussian noise, the uniform noise, the Lap...The phenomenon of stochastic resonance （SR） based on the correlation coefficient in a parallel array of threshold devices is discussed. For four representative noises： the Gaussian noise, the uniform noise, the Laplace noise and the Cauchy noise, when the signal is subthreshold, noise can improve the correlation coefficient and SR exists. The efficacy of SR can be significantly enhanced and the maximum of the correlation coefficient can dramatically approach to one as the number of the threshold devices in the parallel array increases. Two theorems are presented to prove that SR has some robustness to noises in the parallel array. These results further extend the applicability of SR in signal processing.展开更多
近年来随着微波通讯技术与微波集成电路(microwave integratecircuits,MICs)的发展,用于移动通讯、智能运输系统(Intelligent transport system,ITS)、GPS天线的低介电常数低介电损耗的微波介质陶瓷引起了广泛的关注,其中最具代表性的即...近年来随着微波通讯技术与微波集成电路(microwave integratecircuits,MICs)的发展,用于移动通讯、智能运输系统(Intelligent transport system,ITS)、GPS天线的低介电常数低介电损耗的微波介质陶瓷引起了广泛的关注,其中最具代表性的即为Al2O3陶瓷。本文总结了近几年Al2O3陶瓷微波介电性能的研究情况,系统介绍了Al2O3陶瓷微波介电性能的影响因素和目前研究的Al2O3陶瓷体系,希望对于研究AlO陶瓷的微波介电性能提供有益的参考,使其在微波通讯等方面得到更广泛的应用。展开更多
An efficient way to design a down-converter assembly for the Ka-band millimeter system is presented, in which dielectric resonators （DR＇s） are adopted in the Schottky barrier diode image recovery mixer and the loca...An efficient way to design a down-converter assembly for the Ka-band millimeter system is presented, in which dielectric resonators （DR＇s） are adopted in the Schottky barrier diode image recovery mixer and the local oscillator （LO）. DR structures guarantee high frequency stability with an acceptable volume. The configurations of low noise amplifier, mixer and oscillator in the assembly are described and fabricated to estimate the chain performance. According to the verification results, the assembly exhibits the noise figure of less than 5 dB over 1 GHz frequency range, and the single-sideband phase noise （200 kHz offset from carrier frequency） of - 70 dBc/Hz. Utilizing the DR structure, the frequency stability of the local oscillator is less than 60 × 10^-6/℃.展开更多
文摘The phenomenon of stochastic resonance （SR） based on the correlation coefficient in a parallel array of threshold devices is discussed. For four representative noises： the Gaussian noise, the uniform noise, the Laplace noise and the Cauchy noise, when the signal is subthreshold, noise can improve the correlation coefficient and SR exists. The efficacy of SR can be significantly enhanced and the maximum of the correlation coefficient can dramatically approach to one as the number of the threshold devices in the parallel array increases. Two theorems are presented to prove that SR has some robustness to noises in the parallel array. These results further extend the applicability of SR in signal processing.
文摘近年来随着微波通讯技术与微波集成电路(microwave integratecircuits,MICs)的发展,用于移动通讯、智能运输系统(Intelligent transport system,ITS)、GPS天线的低介电常数低介电损耗的微波介质陶瓷引起了广泛的关注,其中最具代表性的即为Al2O3陶瓷。本文总结了近几年Al2O3陶瓷微波介电性能的研究情况,系统介绍了Al2O3陶瓷微波介电性能的影响因素和目前研究的Al2O3陶瓷体系,希望对于研究AlO陶瓷的微波介电性能提供有益的参考,使其在微波通讯等方面得到更广泛的应用。
文摘An efficient way to design a down-converter assembly for the Ka-band millimeter system is presented, in which dielectric resonators （DR＇s） are adopted in the Schottky barrier diode image recovery mixer and the local oscillator （LO）. DR structures guarantee high frequency stability with an acceptable volume. The configurations of low noise amplifier, mixer and oscillator in the assembly are described and fabricated to estimate the chain performance. According to the verification results, the assembly exhibits the noise figure of less than 5 dB over 1 GHz frequency range, and the single-sideband phase noise （200 kHz offset from carrier frequency） of - 70 dBc/Hz. Utilizing the DR structure, the frequency stability of the local oscillator is less than 60 × 10^-6/℃.
