利用多模耦合原理,将两片不同厚度的1-3型复合材料叠堆,制作宽带压电振子。用串并联理论与等效参数理论,计算不同厚度复合材料的谐振频率,得出构成层叠压电振子的两片复合材料的谐振频率差,并通过实验加以验证。结果显示,实验值与计算...利用多模耦合原理,将两片不同厚度的1-3型复合材料叠堆,制作宽带压电振子。用串并联理论与等效参数理论,计算不同厚度复合材料的谐振频率,得出构成层叠压电振子的两片复合材料的谐振频率差,并通过实验加以验证。结果显示,实验值与计算值吻合较好。将上述压电振子灌封,制作水声换能器并进行测试。结果表明,四只换能器的–3 d B带宽最大可达80 k Hz,最大发送电压响应均在163 d B以上。展开更多
The mode frequencies and the quality factors for the equilateral triangular resonator (ETR), the square resonator (SR) and the rhombus resonator (RR) are numerically calculated by the finite difference time domai...The mode frequencies and the quality factors for the equilateral triangular resonator (ETR), the square resonator (SR) and the rhombus resonator (RR) are numerically calculated by the finite difference time domain technique and the Padé approximation. The numerical results show that the resonant modes confined in an equilateral triangular cavity have much higher quality factors than those in the square or the rhombus cavities. The modes in the ETR are totally confined in transverse direction while those in the SR and RR are only partly confined. For the ETR with the side length of 4μm and the refractive index of 3 2, the mode quality factor of about 5 5×10 3 at the wavelength of 1 55μm has been obtained.展开更多
This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices ...This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, translbrmers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, res- onant mode switching technique to enhance frequency tuning range of voltage controlled oscillator （VCO） and dual mode technique for power amplifier （PA） efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive （T/R） switch in 65nm CMOS process is introduced. The measured error vector magnitude （EVM） of the TX is -21.9 dB while the bit error rate （BER） of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply （except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply） and con- sumes 135 mW in TX mode and 176 mW in RX mode.展开更多
文摘利用多模耦合原理,将两片不同厚度的1-3型复合材料叠堆,制作宽带压电振子。用串并联理论与等效参数理论,计算不同厚度复合材料的谐振频率,得出构成层叠压电振子的两片复合材料的谐振频率差,并通过实验加以验证。结果显示,实验值与计算值吻合较好。将上述压电振子灌封,制作水声换能器并进行测试。结果表明,四只换能器的–3 d B带宽最大可达80 k Hz,最大发送电压响应均在163 d B以上。
文摘The mode frequencies and the quality factors for the equilateral triangular resonator (ETR), the square resonator (SR) and the rhombus resonator (RR) are numerically calculated by the finite difference time domain technique and the Padé approximation. The numerical results show that the resonant modes confined in an equilateral triangular cavity have much higher quality factors than those in the square or the rhombus cavities. The modes in the ETR are totally confined in transverse direction while those in the SR and RR are only partly confined. For the ETR with the side length of 4μm and the refractive index of 3 2, the mode quality factor of about 5 5×10 3 at the wavelength of 1 55μm has been obtained.
基金supported in part by the National Natural Science Foundation of China under Grant 61331003 and Grant 61222405
文摘This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, translbrmers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, res- onant mode switching technique to enhance frequency tuning range of voltage controlled oscillator （VCO） and dual mode technique for power amplifier （PA） efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive （T/R） switch in 65nm CMOS process is introduced. The measured error vector magnitude （EVM） of the TX is -21.9 dB while the bit error rate （BER） of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply （except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply） and con- sumes 135 mW in TX mode and 176 mW in RX mode.
