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石墨烯电极弯折对2-苯基吡啶分子器件负微分电阻特性的调控和机理
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作者 邢海英 张子涵 +2 位作者 吴文静 郭志英 茹金豆 《物理学报》 SCIE EI CAS CSCD 北大核心 2023年第3期355-363,共9页
采用非平衡格林函数结合密度泛函理论探讨了以锯齿型石墨烯纳米带为电极、2-苯基吡啶分子为中心区的分子器件电子输运性质.分析I-V特性及透射谱随偏压的变化表明,电极弯折能够调控器件负微分电阻特性,使器件峰值电压(V_(p))减小、电流... 采用非平衡格林函数结合密度泛函理论探讨了以锯齿型石墨烯纳米带为电极、2-苯基吡啶分子为中心区的分子器件电子输运性质.分析I-V特性及透射谱随偏压的变化表明,电极弯折能够调控器件负微分电阻特性,使器件峰值电压(V_(p))减小、电流峰谷比(PVR)增大,当电极弯折角度为15°时,器件获得低峰值电压(0.1 V)、高电流峰谷比(12.84)的负阻特性.平衡态下器件的透射谱、态密度、散射态实空间分布图及投影态密度解释了器件负阻特性被调控源于电极弯折使器件中心分子与电极间的波函数交叠发生变化,导致两者间耦合减弱.弱耦合下外加偏压后,器件的透射系数因能级移动和偏压的变化而产生大幅波动,使器件在低偏置电压处即出现大的透射系数,产生峰值电流Ip,降低了器件的V_(p),且增大了PVR值,其所获得的低V_(p)、高PVR的负阻特性在低功耗分子电子领域具有潜在的应用前景. 展开更多
关键词 微分电阻特性 电极弯折 非平衡格林函数 密度泛函理论
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负阻特性的研究
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作者 丁明芳 《阜阳师范学院学报(自然科学版)》 1996年第1期10-13,共4页
本文详细介绍了负电阻的特性、分类及负电阻在振荡器中的应用,并从定性与定量两方面分析了负阻振荡器的原理。
关键词 负电阻特性 振荡器 振荡电路
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Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects
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作者 徐婷 黄静 李群祥 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2014年第6期653-658,I0003,共7页
We explore the electronic and transport properties of zigzag graphene nanoribbons (GNRs) with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combin... We explore the electronic and transport properties of zigzag graphene nanoribbons (GNRs) with nitrogen-vacancy defects by performing fully self-consistent spin-polarized density functional theory calculations combined with non-equilibrium Green's function technique. We observe robust negative di erential resistance (NDR) effect in all examined molecular junctions. Through analyzing the calculated electronic structures and the bias-dependent transmission coefficients, we find that the narrow density of states of electrodes and the bias-dependent effective coupling between the central molecular orbitals and the electrode subbands are responsible for the observed NDR phenomenon. In addition, the obvious di erence of the transmission spectra of two spin channels is observed in some bias ranges, which leads to the near perfect spin-filtering effect. These theoretical findings imply that GNRs with nitrogenvacancy defects hold great potential for building molecular devices. 展开更多
关键词 Defective graphene nanoribbon Electronic structure Spin-polarized transport property Negative differential resistance Spin-filtering
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