高浓度钾抑制杜氏盐藻生长的生理机制

在含１ｍｏｌ／ＬＮａＣｌ的杜氏盐藻（Ｄｕｎａｌｉｅｌａｓａｌｉｎａ（Ｄｕｎａｌ）Ｔｅｏｄ．）培养液中加入５０ｍｍｏｌ／Ｌ以上的ＫＣｌ可观察到Ｋ＋对杜氏盐藻生长有明显的抑制作用，而当ＫＣｌ达１００ｍｍｏｌ／Ｌ时，杜氏盐藻的生长被完全抑制。另一方面，当培养液中缺乏Ｋ＋时，杜氏盐藻的生长也被显著抑制。在正常培养条件下，伴随着杜氏盐藻的生长，培养液的ｐＨ由８左右升高至１０左右，而高浓度Ｋ＋则显著抑制杜氏盐藻培养液ｐＨ的升高；而在培养液ｐＨ为７．０至１０．０的范围内，不同ｐＨ对杜氏盐藻的生长无明显影响。将杜氏盐藻在高浓度Ｋ＋条件下预处理１２ｈ以上，杜氏盐藻的光合放氧速率显著下降，光合速率下降的程度与Ｋ＋浓度的高低和预处理的时间长短呈正相关。高浓度Ｋ＋处理也引起杜氏盐藻叶绿素含量的显著下降。对经高浓度Ｋ＋预处理的杜氏盐藻的光合放氧速率与培养液中ｐＨ变化同时进行测定的结果表明，Ｋ＋抑制杜氏盐藻光合速率的同时也显著抑制了光照条件引起的培养液ｐＨ的上升。实验结果表明，Ｋ＋抑制杜氏盐藻光合作用以及抑制杜氏盐藻生长与Ｋ＋影响跨盐藻质膜的质子运输之间可能存在一定关系。

Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Magnetotransport properties of two-dimensional electron gases （2DEG） in AlxGa1-x N/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.

Effect of Gate Electric Field on Single Organic Molecular Devices

Based on the first-principles computational method and elastic scattering Green＇s function theory, we have investigated the effect of gate electric field on electronic transport properties of a series of single organic molecular junctions theoretically. The numerical results show that the molecular junctions that have redox centers and relatively large dipole moments parallel gate direction can respond to the gate electric field remarkably. The current-voltage properties of 2,5-dimethyl-thiophene-dithiol present N-channel-metal-oxide-semiconductorlike characteristics. Its distinct current-voltage properties can be understood from the evo- lution of eigenvalues, coupling energies, and atomic charges with gate electric field.

Theoretical Study on Electronic Transport Properties of Oligothiophene Molecular Devices

Based on the first-principles computational method and the elastic scattering Green＇s function theory, we have investigated the electronic transport properties of different oligothiophene molecular junctions theoretically. The numerical results show that the difference of geometric symmetries of the oligothiophene molecules leads to the difference of the contact configurations between the molecule and the electrodes, which results in the difference of the coupling parameters between the molecules and electrodes as well as the delocalization properties of the molecular orbitals. Hence, the series of oligothiophene molecular junctions display unusual conductive properties on the length dependence.

Electronic Transport Properties of Spin-Crossover Magnet Fe（Ⅱ）-N4S2 Complexes

Spin-crossover （SCO） magnets can act as one of the most possible building blocks in molec- ular spintronics due to their magnetic bistability between the high-spin （HS） and low-spin （LS） states. Here, the electronic structures and transport properties through SCO magnet Fe（II）-N4S2 complexes sandwiched between gold electrodes are explored by performing exten- sive density functional theory calculations combined with non-equilibrium Green＇s function formalism. The optimized Fe-N and Fe-S distances and predicted magnetic moment of the SCO magnet Fe（II）-N4S2 complexes agree well with the experimental results. The reversed spin transition between the HS and LS states can be realized by visible light irradiation according to the estimated SCO energy barriers. Based on the obtained transport results, we observe nearly perfect spin-filtering effect in this SCO magnet Fe（II）-N4S2 junction with the HS state, and the corresponding current under small bias voltage is mainly contributed by the spin-down electrons, which is obviously larger than that of the LS case. Clearly, these theoretical findings suggest that SCO magnet Fe（II）-N4S2 complexes hold potential applications in molecular spintronies.

Influences of Quantum and Disorder Effects on Solitons Excited in Protein Molecules in Improved Model

Utilizing the improved model with quasi-coherent two-quantum state and new Hamiltonian containing an additional interaction term [Phys. Rev. E62 (2000) 6989 and Euro. Phys. J. B19 (2001) 297] we study numerically the influences of the quantum and disorder effects including distortion of the sequences of masses of amino acid molecules and fluctuations of force constant of molecular chains, and of exciton-phonon coupled constants and of the dipole-dipole interaction constant and of the ground state energy on the properties of the solitons transported the bio-energy in the protein molecules by Runge-Kutta method. The results obtained show that the new soliton is robust against these structure disorders, especially for stronger disorders in the sequence of masses spring constants and coupling constants,except for quite larger fluctuations of the ground state energy and dipole-dipole interaction constant. This means that the new soliton in the improved model is very stable in normal cases and is possibly a carrier of bio-energy transport in the protein molecules.

A model and simulation of cathode flooding and drying on unsteady proton exchange membrane fuel cell

A water balance has a significant impact on the overall system performance in proton exchange membrane fuel cell.An actual fuel cell application has a dynamic electrical load which means also dynamic electrical current.Therefore,since this electrical current is known,the water production from the fuel cell reaction is also able to be predicted.As long as the fuel cell water transportation model is provided,the present liquid water inside the porous medium is also able to be modeled.A model of the liquid water saturation level in a fuel cell in unsteady load condition was proposed.This model is a series of the water transportation model of water saturation level for the final output of proton exchange membrane(PEM) fuel cell to predict the flooding or drying of PEM fuel cell.The simulation of vehicle fuel cell in different dynamic load profiles and different inlet air conditions was done using this model.The simulation result shows that PEM fuel cell with different dynamic load profiles has different liquid water saturation level profiles.This means that a dynamic load fuel cell requires also a dynamic input air humidification.

Effect of boron/nitrogen co-doping on transport properties of C60 molecular devices

By using nonequilibrium Green＇s function method and first-principles calculations, the electronic transport properties of doped C60 molecular devices were investigated. It is revealed that the C60 molecular devices show the metal behavior due to the interaction between the C60 molecule and the metal electrode. The current-voltage curve displays a linear behavior at low bias, and the currents have the relation of MI〉M3〉M4〉M2 when the bias voltage is lower than 0.6 V. Electronic transport properties are affected greatly by the doped atoms. Negative differential resistance is found in a certain bias range for C60 and C58BN molecular devices, but cannot be observed in C59B and C59N molecular devices. These unconventional effects can be used to design novel nanoelectronic devices.

Electronic and Transport Properties of Carbon Nanotubes with Impurities and Structure Disorder

Electron relaxation time and density of states near the Fermi level were calculated for ＂dirty＂ carbon nanotubes taking into account multiple elastic electrons scattering on impurities and structural inhomogeneities of a short-range order type. A possible explanation of low-temperature behavior of density of states and electrical conductivity depending on defect structure, impurities and chirality is presented.

Negative differential resistance behavior in doped C_(82) molecular devices

By using the first-principle calculations and nonequilibrium Green functions method, the electronic transport properties of molecular devices constructed by C82, C80BN and C80N2 were studied. The results show that the electronic transport properties of molecular devices are affected by doped atoms. Negative differential resistance (NDR) behavior can be observed in certain bias regions for C82 and C80BN molecular devices but cannot be observed for C80N2 molecular device. A mechanism for the negative differential resistance behavior was suggested.

Strain-tunable electronic and transport properties of MoS2 nanotubes

Using density functional theory calculations, we have investigated the mechanical properties and strain effects on the electronic structure and transport properties of molybdenum disulfide （MoS2） nanotubes. At a similar diameter, an armchair nanotube has a higher Young＇s modulus and Poisson ratio than its zigzag counterpart due to the different orientations of Mo-S bond topologies. An increase in axial tensile strain leads to a progressive decrease in the band gap for both armchair and zigzag nanotubes. For armchair nanotube, however, there is a semiconductor-to-metal transition at the tensile strain of about 8%. For both armchair and zigzag nanotubes, the effective mass of a hole is uniformly larger than its electron counterpart, and is more sensitive to strain. Based on deformation potential theory, we have calculated the carrier mobilities of MoS2 nanotubes. It is found that the hole mobility is higher than its electron counterpart for armchair （6, 6） nanotube while the electron mobility is higher than its hole counterpart for zigzag （10, 0） nanotube. Our results highlight the tunable electronic properties of MoS2 nanotubes, promising for interesting applications in nanodevices, such as opto-electronics, photoluminescence, electronic switch and nanoscale strain sensor.

Single Photon Scattering Properties in Coupled-Resonator Waveguide Coupling with a Nanocavity Interacting with an External Mirror

We investigate theoretically single photon transport properties in coupled-resonator waveguide coupling with a nanocavity interacting with an external mirror. By using the discrete coordinates approach, transmission and reflection amplitudes of the propagating single photon in the waveguide are obtained. The influence of the coupling strength between the nanocavity and the external mirror on the single photon scattering spectra is discussed. We also extend the results to the waveguide with linear and quadratic form dispersion relations.

Optical and photo-carrier characterization of ultra-shallow junctions in silicon

Spectroscopic ellipsometry (SE), photocarrier radiometry (PCR) and photoluminescence (PL) techniques were employed to measure the ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5-5 keV, at a dose of 1×1015 As+ /cm 2 and spike annealing. Experimentally the damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 to 20 m. The PCR amplitude decreased monotonically with the increasing implantation energy. The experimental results also showed that the PCR amplitudes of post-annealed USJ wafers were greatly enhanced, compared to the non-implanted and non-annealed substrate wafer. The PL measurements showed the enhanced PCR signals were attributed to the band-edge emissions of silicon. For explaining the PL enhancement, the electronic transport properties of USJ wafers were extracted via multi-wavelength PCR experiment and fitting. The fitted results showed the decreasing surface recombination velocity and the decreasing diffusion coefficient of the implanted layer contributed to the PCR signal enhancement with the decreasing implantation energy. SE, PCR and PL were proven to be non-destructive metrology tools for characterizing ultra-shallow junctions.

Large and controllable tunneling magnetoresistance in ferromagnetic/magnetic-semiconductor/ferromagnetic trilayers

In this work, we selected a magnetic-semiconductor as an interlayer and investigated the electronic transport properties in the ferromagnetic/ferromagnetic-semiconductor/ferromagnetic (FM/FS/FM) trilayers. The results indicate that the large TMR comparable to that in ferromagnetic/metal oxide/ferromagnetic sandwich can be obtained in the FM/FS/FM multilayers with considering the spin filter effect in the magnetic semiconductor layer. Moreover, the transmission coefficient and TMR can be tuned through thickness, Rashba spin-orbit coupling strength and molecular field of the magnetic semiconductor. Our calculations could provide a way to design the semiconductor spintronic devices with excellent and controllable properties.

CH_2,NH,and O heteroatom substitution effects on the electronic,optical,and charge transport properties of a 2,1,3-benzothiadiazole-based derivative:Insights from theory

A set of CH2-,NH-,and O-substituted 2,1,3-benzothiadiazole(BTD)-based derivatives have been investigated theoretically in order to explore their electronic,optical,and charge transport properties.The calculation results show that the electronic and optical properties of the pristine molecule can be easily tuned through changing the S substituent in the central aromatic ring.Based on the calculated maximum emission wavelength,we predict that CH2-,NH-,and O-substituted BTD-based derivatives could be used as red,green,and orange light-emitting materials,respectively.After CH2-,NH-or O-substitution,the oscillator strengths of the emission spectra are enhanced with respect to that of the pristine molecule,implying that these compounds have larger fluorescence intensity.Finally,it can be deduced that CH2-,NH-,and O-substituted BTD-based derivatives may act as hole transport materials in organic light-emitting diodes.

Mg doping and native N vacancy effect on electronic and transport properties of AlN nanowires

The effects of Mg doping(MgAl) and native N vacancy(VN) on the electronic structures and transport properties of Al N nanowire(Al NNW) were theoretically investigated by using density functional theory. Either the MgAl defect or the VN defect prefers to be formed on the Al NNW surfaces. Both MgAl and VN defects could increase the conductivity owing to introducing a defect band inside the band gap of Al N and split the Al N band gap into two subgaps. The defect concentration has little influence on the magnitude of the subgaps. The MgAl serves as a shallow acceptor rendering the nanowire a p-type conductor. The VN introduces a deep donor state enabling the nanowire an n-type conductor. The MgAl systems exhibit higher conductivity than the VN ones owing to the narrow subgaps of MgAl systems. The conductivity is roughly proportional to the defect concentration in the MgAl and VN defect systems. When the MgAl and VN coexist, the hole state of the MgAl defect and the electron state of the VN defect will compensate each other and their coupling state appears just above the valence-band maximum leading to a little decrease of the band gap compared with the pure Al NNW, which is unfavorable for the enhancing of the conductivity.

Negative Differential Resistance in Atomic Carbon Chain-Graphene Junctions

We investigate the electronic transport properties of atomic carbon chain-graphene junctions by using the density-functionla theory combining with the non-equilibrium Green＇s functions. The results show that the transport properties are sensitively dependent on the contact geometry of carbon chain. From the calculated I-V curve we find negative differential resistance （NDR） in the two types of junctions. The NDR can be considered as a result of molecular orbitals moving related to the bias window.

A first-principles study of dihydroazulene as a possible optical molecular switch

By applying nonequilibrium Green's function formalism combined with first-principles density functional theory, we investigate the electronic transport properties of the dihydroazulene optical molecular switch. Three kinds of adsorption sites including the hollow, bridge and top sites are studied. The two forms of this molecule, namely the open form and the closed form, can reversibly switch from each other upon photoexcitation. Their transmission spectra are remarkably distinctive. Theoretical results show that the current of the closed form is always significantly larger than that of the open form for all three adsorption sites, which promises this system as possibly one of the good candidates for optical switches due to its unique advantage, and which may have some potential applications in the future molecular circuit.

Negative differential resistance in a molecular junction of carbon nanotube and benzene

We propose a novel molecular junction with single-walled carbon nanotubes as electrodes bridged by a benzene molecule, in which the electrodes are saturated by different terminations (C-, H- and N-). It is found that the different terminations at the carbon nanotube ends strongly affect the electronic transport properties of the junction. The current-voltage (I-V) curve of the N-terminated carbon nanotube junction shows a more striking nonlinear feature than that of the C- and H-terminated junctions at small bias. Moreover, the negative differential resistance behaviors can be observed significantly in the N-terminated carbon nanotube junction, whereas not in the other two cases.

Temperature-induced Lifshitz transition in topological insulator candidate HfTe_5

The ongoing discoveries and studies of novel topological quantum materials have become an emergent and important field of condensed matter physics. Recently, Hfres ignited renewed interest as a candidate of a novel topological material. The single-layer Hffes is predicted to be a tWOldimensional large band gap topological insulator and can be stacked into a bulk that may host a temperatureldriven topological phase transition. Historically, Hfres attracted considerable interest for its anomalous transport properties characterized by a peculiar resistivity peak accompanied by a sign reversal carrier type. The origin of the transport anomaly remains under a hot debate. Here we report the first high-resolution laserlbased anglelresolved photoemission measurements on the temperature-dependent electronic structure in Hffes. Our results indicated that a temperature-induced Lifshitz transition occurs in Hffes, which provides a natural understanding on the origin of the transport anomaly in Hffe~. In addition, our observa- tions suggest that Hffes is a weak topological insulator that is located at the phase boundary between weak and strong topological insulators at very low temperature.