Simultaneous effects of conduction band non-parabolicity and hydrostatic pressure on the binding energies of 1S, 2S, and 2P states along with diamagnetic susceptibility of an on-center hydrogenic impurity confined in ...Simultaneous effects of conduction band non-parabolicity and hydrostatic pressure on the binding energies of 1S, 2S, and 2P states along with diamagnetic susceptibility of an on-center hydrogenic impurity confined in typical GaAs/Alx- Ga1-x As spherical quantum dots are theoretically investigated using the matrix diagonalization method. In this regard, the effect of band non-parabolieity has been performed using the Luttinger-Kohn effective mass equation. The binding energies and the diamagnetic susceptibility of the hydrogenic impurity are computed as a function of the dot radius and different values of the pressure in the presence of conduction band non-parabolicity effect. The results we arrived at are as follows： the incorporation of the band edge non-parabolicity increases the binding energies and decreases the absolute value of the diamagnetic susceptibility for a given pressure and radius; the binding energies increase and the magnitude of the diamagnetic susceptibility reduces with increasing pressure.展开更多
Based on the effective-mass approximation and variational approach, excitonic optical properties are investigated theoretically in strained wurtzite （WZ） ZnO/MgxZn1-xO cylindrical quantum dots （QDs） for four diffe...Based on the effective-mass approximation and variational approach, excitonic optical properties are investigated theoretically in strained wurtzite （WZ） ZnO/MgxZn1-xO cylindrical quantum dots （QDs） for four different Mg compositions： x = 0.08, 0.14, 0.25, and 0.33, with considering a three-dimensional carrier confinement in QDs and a strong built-in electric field effect due to the piezoelectricity and spontaneous polarization. The ground-state exciton binding energy, the interband emission wavelength, and the radiative lifetime as functions of the QD structural parameters （height and radius） are calculated in detail The computations are performed in the case of finite band offset. Numerical results elucidate that Mg composition has of ZnO/MgxZn1-x 0 QDs. The ground-state exciton a significant influence on the exciton states and optical properties binding energy increases with increasing Mg composition and the increment tendency is more prominent for small height QDs. As Mg composition increases, the interband emission wavelength has a blue-shift if the dot height L 〈 3.5 nm, but the interband emission wavelength has a red-shift when L 〉 3.5 nm. Furthermore, the radiative lifetime increases rapidly with increasing Mg composition if the dot height L 〉 3 nm and the increment tendency is more prominent for large height QDs. The physical reason has been analyzed in depth.展开更多
The binding energy and Stark effect energy shifts of a shallow donor impurity state in a strained GaN/AlxGa1-xN spherical finite-potential quantum dot (QD) are calculated using a variational method based on the effect...The binding energy and Stark effect energy shifts of a shallow donor impurity state in a strained GaN/AlxGa1-xN spherical finite-potential quantum dot (QD) are calculated using a variational method based on the effective mass approximation. The binding energy is computed as a function of dot size and hydrostatic pressure. The numerical results show that the binding energy of the impurity state increases, attains a maximum value, and then decreases as the QD radius increases for any electric field. Moreover, the binding energy increases with the pressure for any size of dot. The Stark shift of the impurity energy for large dot size is much larger than that for the small dot size, and it is enhanced by the increase of electric field. We compare the binding energy of impurity state with and without strain effects, and the results show that the strain effects enhance the impurity binding energy considerably, especially for the small QD size. We also take the dielectric mismatch into account in our work.展开更多
Flexible and broadband photodetectors have drawn extensive attention due to their potential application in foldable displays, optical communications, environmental monitoring, etc. In this work, a flexible photodetect...Flexible and broadband photodetectors have drawn extensive attention due to their potential application in foldable displays, optical communications, environmental monitoring, etc. In this work, a flexible photodetector based on the crystalline PbS quantum dots(QDs)/ZnO nanoparticles(NPs) heterostructure was proposed. The photodetector exhibits a broadband response from ultraviolet-visible(UV-Vis)to near infrared detector(NIR) range with a remarkable current on/off ratio of 7.08×10^3under 375 nm light illumination.Compared with pure ZnO NPs, the heterostructure photodetector shows the three orders of magnitude higher responsivity in Vis and NIR range, and maintains its performance in the UV range simultaneously. The photodetector demonstrates a high responsivity and detectivity of4.54 A W-1and 3.98×10^12Jones. In addition, the flexible photodetectors exhibit excellent durability and stability even after hundreds of times bending. This work paves a promising way for constructing next-generation high-performance flexible and broadband optoelectronic devices.展开更多
文摘Simultaneous effects of conduction band non-parabolicity and hydrostatic pressure on the binding energies of 1S, 2S, and 2P states along with diamagnetic susceptibility of an on-center hydrogenic impurity confined in typical GaAs/Alx- Ga1-x As spherical quantum dots are theoretically investigated using the matrix diagonalization method. In this regard, the effect of band non-parabolieity has been performed using the Luttinger-Kohn effective mass equation. The binding energies and the diamagnetic susceptibility of the hydrogenic impurity are computed as a function of the dot radius and different values of the pressure in the presence of conduction band non-parabolicity effect. The results we arrived at are as follows： the incorporation of the band edge non-parabolicity increases the binding energies and decreases the absolute value of the diamagnetic susceptibility for a given pressure and radius; the binding energies increase and the magnitude of the diamagnetic susceptibility reduces with increasing pressure.
基金Supported by the Young Scientists Fund of the National Natural Science Foundation of China under Grant No. 11102100
文摘Based on the effective-mass approximation and variational approach, excitonic optical properties are investigated theoretically in strained wurtzite （WZ） ZnO/MgxZn1-xO cylindrical quantum dots （QDs） for four different Mg compositions： x = 0.08, 0.14, 0.25, and 0.33, with considering a three-dimensional carrier confinement in QDs and a strong built-in electric field effect due to the piezoelectricity and spontaneous polarization. The ground-state exciton binding energy, the interband emission wavelength, and the radiative lifetime as functions of the QD structural parameters （height and radius） are calculated in detail The computations are performed in the case of finite band offset. Numerical results elucidate that Mg composition has of ZnO/MgxZn1-x 0 QDs. The ground-state exciton a significant influence on the exciton states and optical properties binding energy increases with increasing Mg composition and the increment tendency is more prominent for small height QDs. As Mg composition increases, the interband emission wavelength has a blue-shift if the dot height L 〈 3.5 nm, but the interband emission wavelength has a red-shift when L 〉 3.5 nm. Furthermore, the radiative lifetime increases rapidly with increasing Mg composition if the dot height L 〉 3 nm and the increment tendency is more prominent for large height QDs. The physical reason has been analyzed in depth.
基金supported by the National Natural Science Foundation of China (No.10964006)the Research Funds for the Science and Technology Innovation Team of Inner Mongolia Agricultural University (No. NDPYTD2010-7)
文摘The binding energy and Stark effect energy shifts of a shallow donor impurity state in a strained GaN/AlxGa1-xN spherical finite-potential quantum dot (QD) are calculated using a variational method based on the effective mass approximation. The binding energy is computed as a function of dot size and hydrostatic pressure. The numerical results show that the binding energy of the impurity state increases, attains a maximum value, and then decreases as the QD radius increases for any electric field. Moreover, the binding energy increases with the pressure for any size of dot. The Stark shift of the impurity energy for large dot size is much larger than that for the small dot size, and it is enhanced by the increase of electric field. We compare the binding energy of impurity state with and without strain effects, and the results show that the strain effects enhance the impurity binding energy considerably, especially for the small QD size. We also take the dielectric mismatch into account in our work.
基金funded by the National Natural Science Foundation of China (U1432249)the National Key R&D Program of China (2017YFA0205002)+3 种基金the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)supported by Collaborative Innovation Center of Suzhou Nano Science & Technology and Joint International Research Laboratory of Carbon-Based Functional Materials and Devicesthe support from China Postdoctoral Science Foundation (2017M610346)Natural Science Foundation of Jiangsu Province of China (BK20170343)
文摘Flexible and broadband photodetectors have drawn extensive attention due to their potential application in foldable displays, optical communications, environmental monitoring, etc. In this work, a flexible photodetector based on the crystalline PbS quantum dots(QDs)/ZnO nanoparticles(NPs) heterostructure was proposed. The photodetector exhibits a broadband response from ultraviolet-visible(UV-Vis)to near infrared detector(NIR) range with a remarkable current on/off ratio of 7.08×10^3under 375 nm light illumination.Compared with pure ZnO NPs, the heterostructure photodetector shows the three orders of magnitude higher responsivity in Vis and NIR range, and maintains its performance in the UV range simultaneously. The photodetector demonstrates a high responsivity and detectivity of4.54 A W-1and 3.98×10^12Jones. In addition, the flexible photodetectors exhibit excellent durability and stability even after hundreds of times bending. This work paves a promising way for constructing next-generation high-performance flexible and broadband optoelectronic devices.
