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费米算子的相干态表示
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作者 王发伯 刘全慧 《湖南师范大学自然科学学报》 CAS 1991年第4期321-324,共4页
本文借助Grassmann代数构成费米算子的相干态,并详细地讨论了它们的性质.
关键词 相干态 费米算子 格拉斯曼代数
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K-theoretic classification of fermionic operator mixings in holographic conformal field theories
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作者 Shih-Hao Ho Feng-Li Lin 《Science Bulletin》 SCIE EI CAS CSCD 2016年第14期1115-1125,共11页
In this paper, we apply the K-theory scheme of classifying the topological insulators/superconductors to classify the topological classes of the massive multi-flavor fermions in anti-de Sitter(Ad S) space. In the cont... In this paper, we apply the K-theory scheme of classifying the topological insulators/superconductors to classify the topological classes of the massive multi-flavor fermions in anti-de Sitter(Ad S) space. In the context of Ad S/conformal field theory(CFT) correspondence, the multi-flavor fermionic mass matrix is dual to the pattern of operator mixing in the boundary CFT. Thus, our results classify the possible patterns of operator mixings among fermionic operators in the holographic CFT. 展开更多
关键词 Topological insulators/superconductorsSPT phases AdS/CFT correspondence K-theoretical classification Bulk/Edgecorrespondence Holographic CFT
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Threshold voltage modulation in monolayer MoS_(2) field-effect transistors via selective gallium ion beam irradiation 被引量:1
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作者 Baoshan Tang Yunshan Zhao +7 位作者 Changjie Zhou Mingkun Zhang Huili Zhu Yida Li Jin Feng Leong Hao Shuai Hao Gong Weifeng Yang 《Science China Materials》 SCIE EI CAS CSCD 2022年第3期741-747,共7页
Electronic regulation of two-dimensional(2 D)transition metal dichalcogenides(TMDCs)is a crucial step towards next-generation optoelectronics and electronics.Here,we demonstrate controllable and selective-area defect ... Electronic regulation of two-dimensional(2 D)transition metal dichalcogenides(TMDCs)is a crucial step towards next-generation optoelectronics and electronics.Here,we demonstrate controllable and selective-area defect engineering in 2D molybdenum disulfide(MoS_(2))using a focused ion beam with a low-energy gallium ion(Ga^(+))source.We find that the surface defects of MoS_(2)can be tuned by the precise control of ion energy and dose.Furthermore,the fieldeffect transistors based on the monolayer MoS_(2)show a significant threshold voltage modulation over 70 V after Ga+irradiation.First-principles calculations reveal that the Ga impurities in the monolayer MoS_(2)introduce a defect state near the Fermi level,leading to a shallow acceptor level of 0.25 eV above the valence band maximum.This defect engineering strategy enables direct writing of complex pattern at the atomic length scale in a controlled and facile manner,tailoring the electronic properties of 2D TMDCs for novel devices. 展开更多
关键词 two-dimensional transition metal dichalcogenides field-effect transistors defect engineering Ga ion irradiation
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