This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled g...This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled gain range in a 3dB step. The gain step error is less than 0.5dB. It operates at an intermediate frequency of 300kHz, and the power consumption is 1.35mW from a 1.8V supply. The prototype chip is implemented in a TSMC＇s 0.18μm 1P6M CMOS process and occupies approximately 0.24mm^2 . It is very suitable for portable wire- less communication systems. The measurement results agree well with the system requirements.展开更多
This paper presents a new quasi-static single-phase energy recovery logic （QSSERL）, which unlike any other existing adiabatic logic family,uses a single sinusoidal supply-clock without additional timing control volt...This paper presents a new quasi-static single-phase energy recovery logic （QSSERL）, which unlike any other existing adiabatic logic family,uses a single sinusoidal supply-clock without additional timing control volta- ges. This not only ensures lower energy dissipation, but also simplifies the clock design, which would be otherwise more complicated due to the signal synchronization requirement. It is demonstrated that QSSERL circuits operate as fast as conventional two-phase energy recovery logic counterparts. Simulation with an 8bit logarithmic look- ahead adder （LLA） using static CMOS,clocked CMOS adiabatic logic （CAL,an existing typical single-phase ener- gy recovery logic）,and QSSERL,under 128 randomly generated input vectors,shows that the power consumption of the QSSERL adder is only 45% of that of the conventional static CMOS counterpart at 10MHz, and the QS- SERL adder achieves better energy efficiency than CAL when the input frequency finput is larger than 2MHz.展开更多
A 512-bit EEPROM IP was designed by using just logic process based devices.To limit the voltages of the devices within 5.5 V,EEPROM core circuits,control gate(CG) and tunnel gate(TG) driving circuits,DC-DC converters:...A 512-bit EEPROM IP was designed by using just logic process based devices.To limit the voltages of the devices within 5.5 V,EEPROM core circuits,control gate(CG) and tunnel gate(TG) driving circuits,DC-DC converters:positive pumping voltage(VPP=4.75 V) ,negative pumping voltage(VNN=4.75 V) ,and VNNL(=VNN/2) generation circuit were proposed.In addition,switching powers CG high voltage(CG_HV) ,CG low voltage(CG_LV) ,TG high voltage(TG_HV) ,TG low voltage(TG_LV) ,VNNL_CG and VNNL_TG switching circuit were supplied for the CG and TG driving circuit.Furthermore,a sequential pumping scheme and a new ring oscillator with a dual oscillation period were proposed.To reduce a power consumption of EEPROM in the write mode,the reference voltages VREF_VPP for VPP and VREE_VNN for VNN were used by dividing VDD(1.2 V) supply voltage supplied from the analog block in stead of removing the reference voltage generators.A voltage level detector using a capacitive divider as a low-power DC-DC converter design technique was proposed.The result shows that the power dissipation is 0.34μW in the read mode,13.76μW in the program mode,and 13.66μW in the erase mode.展开更多
The authors report a super low power Medical Implant Communication Service （MICS） band receiver for a high resolution epi-retinal prosthesis （BionicEye）. The frequency shift keying （FSK） receiver consumes less t...The authors report a super low power Medical Implant Communication Service （MICS） band receiver for a high resolution epi-retinal prosthesis （BionicEye）. The frequency shift keying （FSK） receiver consumes less than 1.5 mW power with 1 V supply. It is able to achieve a maximum data rate of 400 kb/s. This paper presents the research work carried out on designing a fully-integrated sub-threshold receiver fabricated on a 65 nm complimentary metal oxide semiconductor （CMOS） chip. In order to achieve super low power consumption, more than 90% of the transistors in all analog building blocks are operated in sub-threshold region. System level issues, such as required receiver architecture and specifications are also addressed.展开更多
This paper deals with an innovative low-loss AC switch, named as TBBS （transistor based bidirectional switch）, based on the association of super-gain BJTs developed by the GREMAN laboratory. The main characterizatio...This paper deals with an innovative low-loss AC switch, named as TBBS （transistor based bidirectional switch）, based on the association of super-gain BJTs developed by the GREMAN laboratory. The main characterization results of the super-gain BJT are reminded to identify the key parameters that are essential to build the TBBS. A complete characterization database in static mode of this new AC switch is discussed. In particular, its forward and reverse-biased features have been measured to see the evolution of the DC current gain as a function of the current density. The TBBS makes sense when using the super-gain BJT （bipolar junction transistor） in reverse mode. It means that the reverse DC current gain has to be sufficient （at least higher than l compared with the conventional BJT one）. This new AC switch is bidirectional in current and voltage, totally controllable （turn-on and turn-off） and the most attractive solution in terms of on-state power losses. Further, its manufacturing process is as easier as existing device such as triac.展开更多
Graphene emerges as an ideal material for constructing high-performance strain sensors,due to its superior mechanical property and high conductivity.However,in the process of assembling graphene into macroscopic mater...Graphene emerges as an ideal material for constructing high-performance strain sensors,due to its superior mechanical property and high conductivity.However,in the process of assembling graphene into macroscopic materials,its conductivity decreases significantly.Also,tedious fabrication process hinders the application of graphene-based strain sensors.In this work,we report a freestanding graphene assembled film(GAF)with high conductivity((2.32±0.08)×105 S m-1).For the sensitive materials of strain sensors,it is higher than most of reported carbon nanotube and graphene materials.These advantages enable the GAF to be an ultra-low power consumption strain sensor for detecting airflow and vocal vibrations.The resistance of the GAF remains unchanged with increasing temperature(20-100℃),exhibiting a good thermal stability.Also,the GAF can be used as a strain sensor directly without any flexible substrates,which greatly simplifies the fabrication process in comparison with most reported strain sensors.Additionally,the GAF used as a pressure sensor with only^4.7μW power is investigated.This work provides a new direction for the preparation of advanced sensors with ultra-low power consumption,and the development of flexible and energy-saving electronic devices.展开更多
Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last...Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last decade, while electrical detection compatible with semiconductor processes has not been achieved, and this is considered one of the most crucial gaps regarding the use of skyrmions in real applications. Here, we report the direct observation of nanoscale skyrmions in Co Fe B/Mg O-based magnetic tunnel junction devices at room temperature. High-resolution magnetic force microscopy imaging and tunneling magnetoresistance measurements are used to illustrate the electrical detection of skyrmions,which are stabilized under the cooperation of interfacial Dzyaloshinskii–Moriya interaction, perpendicular magnetic anisotropy, and dipolar stray field. This skyrmionic magnetic tunnel junction shows a stable nonlinear multilevel resistance thanks to its topological nature and tunable density of skyrmions under current pulse excitation. These features provide important perspectives for spintronics to realize highdensity memory and neuromorphic computing.展开更多
文摘This paper presents a low-voltage low-power variable gain amplifier,which is applied in the automatic gain control loop of a super heterodyne receiver. Six stages are cascaded to provide an 81dB digitally controlled gain range in a 3dB step. The gain step error is less than 0.5dB. It operates at an intermediate frequency of 300kHz, and the power consumption is 1.35mW from a 1.8V supply. The prototype chip is implemented in a TSMC＇s 0.18μm 1P6M CMOS process and occupies approximately 0.24mm^2 . It is very suitable for portable wire- less communication systems. The measurement results agree well with the system requirements.
文摘This paper presents a new quasi-static single-phase energy recovery logic （QSSERL）, which unlike any other existing adiabatic logic family,uses a single sinusoidal supply-clock without additional timing control volta- ges. This not only ensures lower energy dissipation, but also simplifies the clock design, which would be otherwise more complicated due to the signal synchronization requirement. It is demonstrated that QSSERL circuits operate as fast as conventional two-phase energy recovery logic counterparts. Simulation with an 8bit logarithmic look- ahead adder （LLA） using static CMOS,clocked CMOS adiabatic logic （CAL,an existing typical single-phase ener- gy recovery logic）,and QSSERL,under 128 randomly generated input vectors,shows that the power consumption of the QSSERL adder is only 45% of that of the conventional static CMOS counterpart at 10MHz, and the QS- SERL adder achieves better energy efficiency than CAL when the input frequency finput is larger than 2MHz.
基金Project supported by the Second Stage of Brain Korea 21
文摘A 512-bit EEPROM IP was designed by using just logic process based devices.To limit the voltages of the devices within 5.5 V,EEPROM core circuits,control gate(CG) and tunnel gate(TG) driving circuits,DC-DC converters:positive pumping voltage(VPP=4.75 V) ,negative pumping voltage(VNN=4.75 V) ,and VNNL(=VNN/2) generation circuit were proposed.In addition,switching powers CG high voltage(CG_HV) ,CG low voltage(CG_LV) ,TG high voltage(TG_HV) ,TG low voltage(TG_LV) ,VNNL_CG and VNNL_TG switching circuit were supplied for the CG and TG driving circuit.Furthermore,a sequential pumping scheme and a new ring oscillator with a dual oscillation period were proposed.To reduce a power consumption of EEPROM in the write mode,the reference voltages VREF_VPP for VPP and VREE_VNN for VNN were used by dividing VDD(1.2 V) supply voltage supplied from the analog block in stead of removing the reference voltage generators.A voltage level detector using a capacitive divider as a low-power DC-DC converter design technique was proposed.The result shows that the power dissipation is 0.34μW in the read mode,13.76μW in the program mode,and 13.66μW in the erase mode.
文摘The authors report a super low power Medical Implant Communication Service （MICS） band receiver for a high resolution epi-retinal prosthesis （BionicEye）. The frequency shift keying （FSK） receiver consumes less than 1.5 mW power with 1 V supply. It is able to achieve a maximum data rate of 400 kb/s. This paper presents the research work carried out on designing a fully-integrated sub-threshold receiver fabricated on a 65 nm complimentary metal oxide semiconductor （CMOS） chip. In order to achieve super low power consumption, more than 90% of the transistors in all analog building blocks are operated in sub-threshold region. System level issues, such as required receiver architecture and specifications are also addressed.
文摘This paper deals with an innovative low-loss AC switch, named as TBBS （transistor based bidirectional switch）, based on the association of super-gain BJTs developed by the GREMAN laboratory. The main characterization results of the super-gain BJT are reminded to identify the key parameters that are essential to build the TBBS. A complete characterization database in static mode of this new AC switch is discussed. In particular, its forward and reverse-biased features have been measured to see the evolution of the DC current gain as a function of the current density. The TBBS makes sense when using the super-gain BJT （bipolar junction transistor） in reverse mode. It means that the reverse DC current gain has to be sufficient （at least higher than l compared with the conventional BJT one）. This new AC switch is bidirectional in current and voltage, totally controllable （turn-on and turn-off） and the most attractive solution in terms of on-state power losses. Further, its manufacturing process is as easier as existing device such as triac.
基金the National Natural Science Foundation of China(51701146,51672204)the Fundamental Research Funds for the Central Universities(WUT:2017IB015)Foundation of National Key Laboratory on Electromagnetic Environment Effects(614220504030617)。
文摘Graphene emerges as an ideal material for constructing high-performance strain sensors,due to its superior mechanical property and high conductivity.However,in the process of assembling graphene into macroscopic materials,its conductivity decreases significantly.Also,tedious fabrication process hinders the application of graphene-based strain sensors.In this work,we report a freestanding graphene assembled film(GAF)with high conductivity((2.32±0.08)×105 S m-1).For the sensitive materials of strain sensors,it is higher than most of reported carbon nanotube and graphene materials.These advantages enable the GAF to be an ultra-low power consumption strain sensor for detecting airflow and vocal vibrations.The resistance of the GAF remains unchanged with increasing temperature(20-100℃),exhibiting a good thermal stability.Also,the GAF can be used as a strain sensor directly without any flexible substrates,which greatly simplifies the fabrication process in comparison with most reported strain sensors.Additionally,the GAF used as a pressure sensor with only^4.7μW power is investigated.This work provides a new direction for the preparation of advanced sensors with ultra-low power consumption,and the development of flexible and energy-saving electronic devices.
基金financial support from the National Key R&D Program of China(2018YFB0407602,and 2020YFA0309300)National Natural Science Foundation of China(61627813,61871008,62001019,12004024,and 51901081)+5 种基金Beijing Natural Science Foundation(4202043)Beijing Nova Program from Beijing Municipal Science and Technology Commission(Z201100006820042)National Natural Science Foundation of China-German Research Foundation(52061135105)Outstanding Research Project of Shen Yuan Honors College,BUAA(230121102)the Science and Technology Program of Guangzhou(202002030052)Joint Research Key Fund for Guangzhou and Shen Zhen(2021B1515120047)。
文摘Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last decade, while electrical detection compatible with semiconductor processes has not been achieved, and this is considered one of the most crucial gaps regarding the use of skyrmions in real applications. Here, we report the direct observation of nanoscale skyrmions in Co Fe B/Mg O-based magnetic tunnel junction devices at room temperature. High-resolution magnetic force microscopy imaging and tunneling magnetoresistance measurements are used to illustrate the electrical detection of skyrmions,which are stabilized under the cooperation of interfacial Dzyaloshinskii–Moriya interaction, perpendicular magnetic anisotropy, and dipolar stray field. This skyrmionic magnetic tunnel junction shows a stable nonlinear multilevel resistance thanks to its topological nature and tunable density of skyrmions under current pulse excitation. These features provide important perspectives for spintronics to realize highdensity memory and neuromorphic computing.
