Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermedi...Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermediate range of Lsi between 1.9 nm-2.9 nm for samples with LGe fixed at 1.5 ml. In contrast to a pure-Ge/Si quantum well, the energy of the band shows red-shift as Lsi increases. Raman scattering shows that Si-Si vibration related Raman shift reaches a minimum for samples with strongest PL intensity of the abnormal band. It is therefore concluded that the abnormal band is related with strain relaxation process.展开更多
The process of cold seeding melt growth of GdBa2Cu3Oy （Gd123） bulk superconductors using NdBa2Cu3Oy （Nd123） thin films was reported. In addition, a novel cold seeding concept of combining MgO crystal and buffer pe...The process of cold seeding melt growth of GdBa2Cu3Oy （Gd123） bulk superconductors using NdBa2Cu3Oy （Nd123） thin films was reported. In addition, a novel cold seeding concept of combining MgO crystal and buffer pellet was also introduced. The misorientation caused by the lattice mismatch between MgO and Gd123 melt was overcome by choosing suitable heat treatment program and Gd2BaCuO5 （Gd211） content of the buffer pellet. The doping effect of soft ferromagnetic NiFe alloy particles was also reported. The bulk sample with 0.4% （mole fraction） doping amount shows the best performance on the flux trapping. The critical current density is largely enhanced under the external field of 1-2 T, which is promising for large-scale applications. This effect is originated from the substitution of Fe and Ni ions for the Cu sites contributing to magnetic flux pinning.展开更多
文摘Pure-Ge/Si short period superlattice (SPS) grown by gas source MBE (GSMBE) is studied by photoluminescence spectroscopy and Raman scattering spectroscopy. An abnormal band in photoluminescence is found in an intermediate range of Lsi between 1.9 nm-2.9 nm for samples with LGe fixed at 1.5 ml. In contrast to a pure-Ge/Si quantum well, the energy of the band shows red-shift as Lsi increases. Raman scattering shows that Si-Si vibration related Raman shift reaches a minimum for samples with strongest PL intensity of the abnormal band. It is therefore concluded that the abnormal band is related with strain relaxation process.
文摘The process of cold seeding melt growth of GdBa2Cu3Oy （Gd123） bulk superconductors using NdBa2Cu3Oy （Nd123） thin films was reported. In addition, a novel cold seeding concept of combining MgO crystal and buffer pellet was also introduced. The misorientation caused by the lattice mismatch between MgO and Gd123 melt was overcome by choosing suitable heat treatment program and Gd2BaCuO5 （Gd211） content of the buffer pellet. The doping effect of soft ferromagnetic NiFe alloy particles was also reported. The bulk sample with 0.4% （mole fraction） doping amount shows the best performance on the flux trapping. The critical current density is largely enhanced under the external field of 1-2 T, which is promising for large-scale applications. This effect is originated from the substitution of Fe and Ni ions for the Cu sites contributing to magnetic flux pinning.
