卡夫曼家族的流水别墅可以说是世界最著名的现代建筑,与之闻名的不是建筑的主人。而是他的设计师弗兰克·劳埃德·赖特。他以原生态超越时间的质地.忽略建筑史的诸多流派.实现了“方山之宅”(house on the mesa)的梦想。...卡夫曼家族的流水别墅可以说是世界最著名的现代建筑,与之闻名的不是建筑的主人。而是他的设计师弗兰克·劳埃德·赖特。他以原生态超越时间的质地.忽略建筑史的诸多流派.实现了“方山之宅”(house on the mesa)的梦想。正是秉承了大师的灵性.TOTO的设计与赖特先生自然刚性的现代主义风格十分切合。将乐怡系列发展成TOTO美学理念的顶尖之作.与追求前卫时尚的审美视角一拍即合。是精品,更是艺术品。洗练的直线,唯美的棱角,超平滑表面,构成灵动质感的卫浴组合,置身其中,仿佛于对称唯美的几何空间游历。展开更多
Herein we report the room-temperature epitaxial growth of V203 films by laser molecule beam epitaxy. X-ray diffraction pro- files show the room-temperature epitaxial V2O3 films orient in the [ 110] direction on α-Al2...Herein we report the room-temperature epitaxial growth of V203 films by laser molecule beam epitaxy. X-ray diffraction pro- files show the room-temperature epitaxial V2O3 films orient in the [ 110] direction on α-Al2O3 (0001) substrates. Atomic force microscopy measurements reveal that the ultra-smooth surfaces with root-mean-square surface roughness of 0.11 nm and 0.28 nm for 10-nm-thick and 35-nm-thick V2O3 film, respectively. X-ray photoelectron spectroscopy results indicate the V3+ oxida- tion state in the films. Typical metal-insulator transition is observed in films at about 135 K. The resistivities at 300 K are ap- proximately 0.8 mΩ cm and 0.5 mΩ cm for 10-rim-thick and 35-nm-thick V203 film, respectively.展开更多
文摘卡夫曼家族的流水别墅可以说是世界最著名的现代建筑,与之闻名的不是建筑的主人。而是他的设计师弗兰克·劳埃德·赖特。他以原生态超越时间的质地.忽略建筑史的诸多流派.实现了“方山之宅”(house on the mesa)的梦想。正是秉承了大师的灵性.TOTO的设计与赖特先生自然刚性的现代主义风格十分切合。将乐怡系列发展成TOTO美学理念的顶尖之作.与追求前卫时尚的审美视角一拍即合。是精品,更是艺术品。洗练的直线,唯美的棱角,超平滑表面,构成灵动质感的卫浴组合,置身其中,仿佛于对称唯美的几何空间游历。
基金supported by the National Basic Research Program of China(Grant Nos.2010CB630704 and 2012CB921403)
文摘Herein we report the room-temperature epitaxial growth of V203 films by laser molecule beam epitaxy. X-ray diffraction pro- files show the room-temperature epitaxial V2O3 films orient in the [ 110] direction on α-Al2O3 (0001) substrates. Atomic force microscopy measurements reveal that the ultra-smooth surfaces with root-mean-square surface roughness of 0.11 nm and 0.28 nm for 10-nm-thick and 35-nm-thick V2O3 film, respectively. X-ray photoelectron spectroscopy results indicate the V3+ oxida- tion state in the films. Typical metal-insulator transition is observed in films at about 135 K. The resistivities at 300 K are ap- proximately 0.8 mΩ cm and 0.5 mΩ cm for 10-rim-thick and 35-nm-thick V203 film, respectively.