The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistic...The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation,the time to breakdown,and stress voltage.It also means that the time constant of trap generation can be used to predict oxide lifetime.This method is faster for TDDB study compared with usual breakdown experiments.展开更多
s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests ...s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests that two kinds of traps exist in the degradation of gate oxide.It is also observed that both the trap density and the generation/capture cross section of oxide trap and interface trap are smaller in ultra thin gate oxide (<3nm) under DT stress than those in the thicker oxide (>4nm) under FN stress,and the centroid of oxide trap is closer to anode interface than in the center of oxide.展开更多
The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is ...The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.展开更多
文摘The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation,the time to breakdown,and stress voltage.It also means that the time constant of trap generation can be used to predict oxide lifetime.This method is faster for TDDB study compared with usual breakdown experiments.
文摘s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests that two kinds of traps exist in the degradation of gate oxide.It is also observed that both the trap density and the generation/capture cross section of oxide trap and interface trap are smaller in ultra thin gate oxide (<3nm) under DT stress than those in the thicker oxide (>4nm) under FN stress,and the centroid of oxide trap is closer to anode interface than in the center of oxide.
文摘The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.
