The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is ...The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10 ^-5 Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.展开更多
The I-V characteristic of a superconductor is generally described by power-law,in which the superconductor with a high n transfers quickly from superconducting state to the normal conducting state.With a high transpor...The I-V characteristic of a superconductor is generally described by power-law,in which the superconductor with a high n transfers quickly from superconducting state to the normal conducting state.With a high transport current,in the low n value area,flux flow voltage becomes lower than in the high n value area,so that the transient characteristics strongly affect its stability.Based on those properties,we propose a new hybrid conductor which is made of low temperature superconductor(LTS) and high temperature superconductor(HTS) with concentric configuration in which the HTS coat is located outside of the LTS core.According to their power-law models,the modified adiabatic and dynamic stability criteria are qualitatively obtained by taking account into not only their critical currents but also n values.As a result,the new hybrid conductors have potential applications with higher engineering current density and improved stability.展开更多
文摘The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10 ^-5 Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.
基金supported in part by the National Natural Science Foundation of China (Grant No. 51077051)
文摘The I-V characteristic of a superconductor is generally described by power-law,in which the superconductor with a high n transfers quickly from superconducting state to the normal conducting state.With a high transport current,in the low n value area,flux flow voltage becomes lower than in the high n value area,so that the transient characteristics strongly affect its stability.Based on those properties,we propose a new hybrid conductor which is made of low temperature superconductor(LTS) and high temperature superconductor(HTS) with concentric configuration in which the HTS coat is located outside of the LTS core.According to their power-law models,the modified adiabatic and dynamic stability criteria are qualitatively obtained by taking account into not only their critical currents but also n values.As a result,the new hybrid conductors have potential applications with higher engineering current density and improved stability.
