具有超高掺杂基区的GaAs赝HBT分析

超高掺杂GaAs具有明显的禁带变窄(BGN)效应,因此采用超高掺杂基区的GaAs同质晶体管也可获得HBT的效果.故称之为赝HBT(p—HBT)。本文根据实验结果讨论了超高掺杂情况下GaAs的BGN效应及其对有效本征载流子浓度的影响,并对np^+n型结构GaAs p—HBT的发射极注入效率和共发射极电流增益进行了理论分析。结果表明,当基区掺杂浓度高于1×10^(20)/cm^3时可以获得较好的器件特性。

被动锁模Yb^(3+)光纤环形腔激光器的研究

采用974 nm半导体激光器作为泵浦源,超高掺杂Yb3+光纤作为增益介质,利用光纤的非线性偏振旋转效应,得到稳定的ps量级锁模光脉冲。泵浦功率220 mW时,激光器锁模阈值功率150 mW,输出功率26 mW,锁模光脉冲中心波长1 046 nm,3 dB带宽6.01 nm,20 dB带宽16 nm,脉宽22 ps,重复频率20MHz。与同类光纤激光器相比,该激光器输出功率高,具有更好的稳定性。

High-power superfluorescent source of Yb^(3+)-doped double-cladding photonic crystal fiber

A new type of high-power broadband superfluorescent source of Yb3+-doped double-cladding photonic crystal fiber is reported experimentally, which is pumped at 976 nm by a high-power laser diode with the end-coupling method. We have obtained a smooth broadband output of superfluorescence. The maximum output power is 1.649 W with a slope efficiency of 56.7%. The 3 dB bandwidth is 22.4 nm.To the best of our knowledge,this is the first report about SFS with such high output power of 1.649 W.