Thermally activated dislocation emission in high-temperature ferroelectric ceramics is investigated through an assumption of thermal stability and a novel analytical method. The stress intensity factor (SIF) arising f...Thermally activated dislocation emission in high-temperature ferroelectric ceramics is investigated through an assumption of thermal stability and a novel analytical method. The stress intensity factor (SIF) arising from domain switching is evaluated by using a Green's function method, and the critical applied electric field intensity factor (CAEFIF) for brittle fracture at room temperature is obtained. Besides, the lowest temperature for single dislocation emission before brittle fracture is also obtained by constructing an energy balance. The multi-scale analysis of facture toughness of the ferroelectric ceramics at high temperature is carried out. Through the analysis, the CAEFIF for crack extension is recalculated. The results show that the competition and interaction effects between dislocation emission and brittle fracture are very obvious. Besides, the higher critical activation temperature, the more columns of obstacles will be overcome. Additionally, the shielding effect arising from thermally activated dislocations is remarkable, thus, the brittle-ductile transition can promote the fracture toughness of high-temperature ferroelectric ceramics.展开更多
基金Supported by the Ph.D. Programs Foundation of Ministry of Education of China under Grant No. 20123305120008, the Scientific Research Project of Department of Education of Zhejiang Province under Grant No. Y201223508, a Grant from the Impact and Safety of Coastal Engineering Initiative, a COE Program of Zhejiang Provincial Government at Ningbo University under Grant Nos. zj1117, zj1203, and zj1201 and the K.C. Wong Magana Fund
文摘Thermally activated dislocation emission in high-temperature ferroelectric ceramics is investigated through an assumption of thermal stability and a novel analytical method. The stress intensity factor (SIF) arising from domain switching is evaluated by using a Green's function method, and the critical applied electric field intensity factor (CAEFIF) for brittle fracture at room temperature is obtained. Besides, the lowest temperature for single dislocation emission before brittle fracture is also obtained by constructing an energy balance. The multi-scale analysis of facture toughness of the ferroelectric ceramics at high temperature is carried out. Through the analysis, the CAEFIF for crack extension is recalculated. The results show that the competition and interaction effects between dislocation emission and brittle fracture are very obvious. Besides, the higher critical activation temperature, the more columns of obstacles will be overcome. Additionally, the shielding effect arising from thermally activated dislocations is remarkable, thus, the brittle-ductile transition can promote the fracture toughness of high-temperature ferroelectric ceramics.
