A transient numerical model was applied to simulating the axial-directional crystallization purification(ADCP) process of gallium(Ga) raw material at different coolant temperatures(Tc), and the evolutions of melt/crys...A transient numerical model was applied to simulating the axial-directional crystallization purification(ADCP) process of gallium(Ga) raw material at different coolant temperatures(Tc), and the evolutions of melt/crystal(m/c) interface shape, temperature distribution and thermal stresses were simulated and analyzed. The results showed that the m/c interface shape, temperature distribution, and thermal stress in the Ga material were determined by the Tc in the crystallizer during the ADCP process. The temperature gradient and thermal stress in the grown Ga crystal increased with decreasing Tc. At Tc=15 ℃, the m/c interface shape was flat, and the temperature gradient was ideal. Therefore, the Ga materials with lower thermal stresses and suitable m/c interface shape, and an ideal efficiency of impurity removal were obtained. The purity of Ga reached 6 N standard by using ADCP process repeated 6 times at Tc of 15 ℃. The results of the simulation showed good agreement with the experimental results.展开更多
基金Project(51465014)supported by the National Natural Science Foundation of ChinaProject(Guike AA17204021-7)supported by the Innovation Driven Development Special Foundation of Guangxi,China。
文摘A transient numerical model was applied to simulating the axial-directional crystallization purification(ADCP) process of gallium(Ga) raw material at different coolant temperatures(Tc), and the evolutions of melt/crystal(m/c) interface shape, temperature distribution and thermal stresses were simulated and analyzed. The results showed that the m/c interface shape, temperature distribution, and thermal stress in the Ga material were determined by the Tc in the crystallizer during the ADCP process. The temperature gradient and thermal stress in the grown Ga crystal increased with decreasing Tc. At Tc=15 ℃, the m/c interface shape was flat, and the temperature gradient was ideal. Therefore, the Ga materials with lower thermal stresses and suitable m/c interface shape, and an ideal efficiency of impurity removal were obtained. The purity of Ga reached 6 N standard by using ADCP process repeated 6 times at Tc of 15 ℃. The results of the simulation showed good agreement with the experimental results.
