开发新型载件器的思路

在研究邮件变化的基础上，以邮件尺寸分布情况统计表为依据，将邮件适当分档。按邮件分档情况，提出开发一个可同时运载大、中、小型邮件多件的新型载件器思路。

Degradation of pMOSFETs with Ultrathin Oxide andDifferent HALO Dose

The effect of HALO dose on device parameter degradation of pMOSFET with 2.1nm o xide and 0.135μm channel length at hot carrier stress is analyzed.It is found that the degradation mechanism is not sensitive to HALO dose changing,but the d egradation quantities of linear drain current,saturation drain current,and maxim um transconductance increase with HALO dose enhancing and are larger than those of speculated before.The degradation of device parameters (linear drain current, saturation drain current,and maximum transconductance) is attributed to not onl y the drain series resistance enhancing induced by interface states under spacer oxide and carrier mobility degradation but also the threshold voltage variation and initial threshold voltage increasing with HALO dose enhancing.

Characterization of Oxide Charge During Hot-Carrier Degradation of Ultrathin Gate pMOSFETs--Investigated by Charge Pumping Technique

The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.

A STUDY ON HOT-CARRIER-INDUCED GATE OXIDE BREAKDOWN IN PARTIALLY DEPLETED SIMOX MOSFET'S

The hot-carrier-induced oxide regions in the front and back interfaces are systematically studied for partially depleted SOI MOSFET's. The gate oxide properties are investigated for channel hot-carrier effects. The hot-carrier-induced device degradations are analyzed using stress experiments with three typical hot-carrier injection, i.e., the maximum gate current, maximum substrate current and parasitic bipolar transistor action. Experiments show that PMOSFET's degradation is caused by hot carriers injected into the drain side of the gate oxide and the types of trapped hot carrier depend on the bias conditions, and NMOSFET's degradation is caused by hot holes. This paper reports for the first time that the electric characteristics of NMOSFET's and PMOSFET's are significantly different after the gate oxide breakdown, and an extensive discussion of the experimental findings is provided.

Reliable and Load Balance-Aware Multi-Controller Deployment in SDN

Software Defined Networking(SDN) provides flexible network management by decoupling control plane and data plane. However, such separation introduces the issues regarding the reliability of the control plane and controller load imbalance in the distributed SDN network, which will cause the low network stability and the poor controller performance. This paper proposes Reliable and Load balance-aware Multi-controller Deployment(RLMD) strategy to address the above problems. Firstly, we establish a multiple-controller network model and define the relevant parameters for RLMD. Then, we design the corresponding algorithms to implement this strategy. By weighing node efficiency and path quality, Controller Placement Selection(CPS) algorithm is introduced to explore the reliable deployments of the controllers. On this basis, we design Multiple Domain Partition(MDP) algorithm to allocate switches for controllers according to node attractability and controller load balancing rate, which could realize the reasonable domain planning. Finally, the simulations show that, compared with the typical strategies, RLMD has the better performance in improving the reliability of the control plane and balancing the distribution of the controller loads.

Towards Wide-Open, Adaptable DCF Implementation for Dynamic Networks

Abstract： This work proposes a Field Programmable Gate Array （FPGA）-oriented architecture for the IEEE 802.11 Distributed Coordination Function （DCF） transceiver. We describe the functional blocks carrying out the Carrier Sense Multiple Accesses with Collision Avoidance （CSMA/CA）, develop the interfaces to the application layer and the physical layer, and implement it on FPGA devices by utilizing Very-high-speed-integrated-circuit Hardware Description Language （VHDL）.

Wheel-Individual Estimation of the Friction Potential for Split Friction and Changing Friction Conditions for the Application in an Automated Emergency Braking System

Including information of the current road surface conditions can significantly improve the effectiveness of an AEB （automated emergency braking） system to avoid accidents or reduce the injury severity in rear-end crashes. A method to estimate the friction potential based on on-board sensor information is shown in this work. This work expands the scope of existing investigations on whether the accuracy needed for the warning and intervention strategies of AEB can be reached with the proposed method. First, the bandwidth of surface conditions investigated is extended by including low friction surfaces comparable to ice. Second, situations of changing surface conditions and wheel-individual surface conditions were evaluated. Finally, estimation based on different sensor sets was conducted with regard to series application. The investigations are based on measurements performed on a proving ground. The main emphasis was placed on estimation during longitudinal driving conditions. The used sensors include advanced vehicle dynamics measurement equipment as well as standard on-board sensors of the vehicle.

Ferroresonance at Open Phase Operating Conditions of Power Transformers

The reliability of electric supply to consumers is one of the most important factors that determine the requirements imposed on modem utility companies. This paper presents the results of investigation by computer software of the overvoltages resulting from a ferroresonance conditions in MV networks at open phase operating condition with and without connection to earth on source and load sides of distribution transformer. This overvoltage may reach 4.2 pu on one of the HV side of transformer unswitched phases. The results of the study show that ferroresonance overvoltage may be controlled by replacing fuses with circuit breakers on HV side to ensure switching-off all phases. Insertion of resistor or reactor in the neutral of source and loadsides of the transformer with 5% active load will help in suppressing overvoltages.

CsPbBrI perovskites with low energy loss for high-performance indoor and outdoor photovoltaics

Over the years,the efficiency of inorganic perovskite solar cells(PSCs)has increased at an unprecedented pace.However,energy loss in the device has limited a further increase in efficiency and commercialization.In this work,we used(NH4)2C2O4·H2O to treat CsPbBrI2 perovskite film during spin-coating.The CsPbBrI2 underwent secondary crystallization to form high quality films with micrometer-scale and low trap density.(NH4)2C2O4·H2O treatment promoted charge transfer capacity and reduced the ideal factor.It also dropped the energy loss from 0.80 to 0.64 eV.The resulting device delivered a power conversion efficiency(PCE)of 16.55%with an open-circuit voltage(Voc)of 1.24 V,which are largely improved compared with the reference device which exhibited a PCE of 13.27%and a Voc of 1.10 V.In addition,the optimized treated device presented a record indoor PCE of 28.48%under a fluorescent lamp of 1000 lux,better than that of the reference device(19.05%).

Mass transfer,detection and repair technologies in micro-LED displays

Micro-light emitting diode(micro-LED)is an emerging display technology with excellent performance of high contrast,low power consumption,long lifetime,and fast response time compared with the current display(e.g.,liquid crystal and organic LED(OLED)).With technological advantages,micro-LED holds promise to be widely applied in augmented reality(AR),flexible screens,etc.and is thus regarded as the next generation of display technology.In the process flow of micro-LED,the step known as mass transfer that requires transferring millions of micro-LEDs from a growth substrate to a display plane,is one of the key challenges limiting the commercialization of micro-LED from laboratory.Worldwide academic and industrial efforts have been devoted to developing mass transfer strategies with purposes of improving yield and reducing cost.Herein we review three main categories of mass transfer technologies for micro-LED display(pick-and-place,fluid self-assembly and laser-enabled advanced placement)and the coupled detection and repair technologies after transfer.Discussions and comparisons have been provided about the underlying general principle,history,and representative parties,advantages,and disadvantages(yield/efficiency/cost)of these technologies.We further envision the application prospect of these transfer technologies and the promise of the future display of micro-LED.

Perovskite QLED with an external quantum efficiency of over 21%by modulating electronic transport

Perovskite quantum-dot-based light-emitting diodes(QLEDs)are highly promising for future solid-state lightings and high-definition displays due to their excellent color purity.However,their device performance is easily affected by charge accumulation induced luminescence quenching due to imbalanced charge injection in the devices.Here we report green perovskite QLEDs with simultaneously improved efficiency and operational lifetime through balancing the charge injection with the employment of a bilayered electron transport structure.The charge-balanced QLEDs exhibit a color-saturated green emission with a full-width at half-maximum(FWHM)of 18 nm and a peak at 520 nm,a low turn-on voltage of2.0 V and a champion external quantum efficiency(EQE)of 21.63%,representing one of the most efficient perovskite QLEDs so far.In addition,the devices with modulated charge balance demonstrate a nearly 20-fold improvement in the operational lifetime compared to the control device.Our results demonstrate the great potential of further improving the device performance of perovskite QLEDs toward practical applications in lightings and displays via rational device engineering.

Low carrier concentration leads to high in-plane thermoelectric performance in n-type SnS crystals

As a simple binary compound, p-type SnS shows great competitiveness in thermoelectrics due to the certain appealing carrier and phonon transport behaviors, coupled with its cost-effectiveness, earth-abundance and environmental compatibility. To promote the application of low-cost thermoelectric devices, we synthesized n-type SnS crystals through bromine doping. Herein, we report a high in-plane power factor of ~28 μW cm^(-1)K^(-2), and attribute it to an outstanding in-plane carrier mobility in the crystal form and the large Seebeck coefficient benefitting from the low carrier concentration. The calculations of elastic properties show that the low lattice thermal conductivity in SnS is closely related to its strong anharmonicity. Combining the excellent electrical transport properties with low thermal conductivity, a final ZT of ~0.4 is attained at 300 K, projecting a conversion efficiency of ~5% at 873 K along the in-plane direction.

Light-emitting field-effect transistors with EQE over 20%enabled by a dielectric-quantum dots-dielectric sandwich structure

Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost.Considerable efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport layers.Here,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich structure.Such DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive layer.Also,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge transfer.The DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.

Knockdown factor of buckling load for axially compressed cylindrical shells:state of the art and new perspectives

Thin-walled structures are commonly utilized in aerospace and aircraft structures,which are prone to buckling under axial compression and extremely sensitive to geometric imperfections.After decades of efforts,it still remains a challenging issue to accurately predict the lower-bound buckling load due to the impact of geometric imperfections.Up to now,the lower-bound curve in NASA SP-8007 is still widely used as the design criterion of aerospace thin-walled structures,and this series of knockdown factors(KDF)has been proven to be overly conservative with the significant promotion of the manufacturing process.In recent years,several new numerical and experimental methods for determining KDF have been established,which are systematically reviewed in this paper.The Worst Multiple Perturbation Load Approach(WMPLA)is one of the most representative methods to reduce the conservatism of traditional methods in a rational manner.Based on an extensive collection of test data from 1990 to 2020,a new lower-bound curve is approximated to produce a series of improved KDFs.It is evident that these new KDFs have an overall improvement of 0.1-0.3 compared with NASA SP-8007,and the KDF predicted by the WMPLA is very close to the front of the new curve.This may provide some insight into future design guidelines of axially compressed cylindrical shells,which is promising for the lightweight design of large-diameter aerospace structures.

Excellent thermoelectric performance of boron-doped n-type Mg_(3)Sb_(2)-based materials via the manipulation of grain boundary scattering and control of Mg content

Thermoelectric devices require thermoelectric materials with high figure-of-merit(ZT)values in the operating temperature range.In recent years,the Zintl phase compound,n-Mg_(3)Sb_(2),has received much attention owing to its rich chemistry and structural complexity.However,it hardly achieves high ZT values throughout the medium temperature range.Herein,by increasing the sintering temperature as much as possible,we successfully increased the average grain size of the compound by 15 times,and the grain boundary scattering was manipulated to obtain high carrier mobility of up to 180 cm^(2)V^(-1)s^(-1).Simultaneously,we optimized the Mg content for ultralow lattice thermal conductivity.We first doped the Mg_(3)Sb_(2)-based materials with boron for higher sintering temperature,good thermal stability,and higher hardness.The synergistic optimization of electrical and thermal transport resulted in excellent ZT values(0.62 at 300 K,1.81 at 773 K)and an average ZT of 1.4(from300 to 773 K),which are higher than the state-of-the-art values for n-type thermoelectric materials,demonstrating a high potential in device applications.

Facile fabrication of encryption composite materials with trilayer quasi-amorphous heterostructure

Encryption materials represent a major direction of information security,but it is challenging to realize the ideal security combining the complete hiding of complex coding,stability in transmission,camouflage,and reliable decoding.Herein,we report an innovative strategy for rationally constructing encryption composite materials with high security and portability.Compared with common colloidal photonic watermarks,our encrypted optical devices are composed of thermoplastic polyurethanes(TPU)protective layers,polystyrene(PS)switching layers and a Cd S coding layer.The optical shielding properties and phase state transition of PS layers enable high-level encoding and decoding security through thermal activation of light transmittance control.Meanwhile,the Cd S layer can be clearly revealed in decoding mode because of the high refractive index.Besides,the confinement protection of integrated TPU films prevents the trilayer quasi-amorphous heterostructure from damage.To establish the practical advantage,portable information carriers can be prepared for camouflage.Accordingly,the reliable encoding and decoding system,and ability to integrate with easy-to-carry products,make our composites a potentially high-security encryption device for anti-fraud technology.