The hot-carrier-induced oxide breakdown i s systematically clarified for partially depleted SOI NMOSFET's fabricated on SI MOX wafer.The gate oxide properties are considered to analyze the channel hot-c arrier eff...The hot-carrier-induced oxide breakdown i s systematically clarified for partially depleted SOI NMOSFET's fabricated on SI MOX wafer.The gate oxide properties are considered to analyze the channel hot-c arrier effects.Hot-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection conditions.Based on these results,the influence of channel hot carriers on SOI NMOSFET's front-chan nel properties is investigated.A power time dependence extrapolation technique i s proposed to predict the device's lifetime.Experimental results show that the N MOSFET's degradation is caused by the hot-holes,which are injected into the gat e oxide from the drain and then trapped near the drain side.However,the electron s trapped in the gate oxide can accelerate the gate breakdown.The two simultaneo us breakages of Si-O bonds at a Si atom lead to the irreversible relaxation of the oxide network.A novel physical mechanism of channel hot-carrier-induced ga te oxide breakdown is also presented.展开更多
文摘The hot-carrier-induced oxide breakdown i s systematically clarified for partially depleted SOI NMOSFET's fabricated on SI MOX wafer.The gate oxide properties are considered to analyze the channel hot-c arrier effects.Hot-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection conditions.Based on these results,the influence of channel hot carriers on SOI NMOSFET's front-chan nel properties is investigated.A power time dependence extrapolation technique i s proposed to predict the device's lifetime.Experimental results show that the N MOSFET's degradation is caused by the hot-holes,which are injected into the gat e oxide from the drain and then trapped near the drain side.However,the electron s trapped in the gate oxide can accelerate the gate breakdown.The two simultaneo us breakages of Si-O bonds at a Si atom lead to the irreversible relaxation of the oxide network.A novel physical mechanism of channel hot-carrier-induced ga te oxide breakdown is also presented.
