As one of the most promising forms of light-emitting,long-persistent luminescence(LPL),that was first observed in ancient luminous pearls from the Yan dynasty in China,continues to exhibit renewed vitality across a wi...As one of the most promising forms of light-emitting,long-persistent luminescence(LPL),that was first observed in ancient luminous pearls from the Yan dynasty in China,continues to exhibit renewed vitality across a wide range of optoelectronic applications,encompassing optical display,bioimaging,photonic technologies and photocatalysis in modern society[1].展开更多
Ce^(3+)和Ce^(4+)在SrTiO_(3)中的插入对能带结构的缺陷诱导改性:一种高性能的太阳光驱动催化剂Defect-induced modification of band structure by the insertion of Ce^(3+)and Ce^(4+)in SrTiO_(3):A high-performance sunlight-driv...Ce^(3+)和Ce^(4+)在SrTiO_(3)中的插入对能带结构的缺陷诱导改性:一种高性能的太阳光驱动催化剂Defect-induced modification of band structure by the insertion of Ce^(3+)and Ce^(4+)in SrTiO_(3):A high-performance sunlight-driven photocatalyst领域:催化材料团队:墨西哥国立理工大学期刊:Applied Surface Science(impact factor:6.707)1区Ce^(3+)和Ce^(4+)离子成功取代了Pechini型溶胶-凝胶法合成的SrTiO_(3)纳米颗粒(NPs)的Sr^(2+)位点,并在750℃后退火。得到的Ce掺杂NPs平均粒径高达31.2±0.5 nm,表现出SrTiO_(3)的立方钙钛矿结构。根据晶体结构、价态、电子结构和光学性质的分析,Ce^(3+)/Ce^(4+)对诱导的表面缺陷对改善光吸收、电荷转移和表面化学吸附过程具有重要影响。因此,具有标称成分Sr_(0.97)Ce_(0.03)TiO_(3)的纳米颗粒在表面缺陷增强的光吸收和缺陷引起的载流子陷阱之间具有最佳平衡,在模拟阳光120分钟后表现出最高的光催化活性,去除了95.10%的亚甲基蓝染料。展开更多
采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致...采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致发光器件(OLEDs).OLEDs的器件结构为indium tin oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine(NPB)/CBP:(t-bt)2Ir(acac)/NPB/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/8-hydroxyquinoline aluminum(Alq3)/Mg∶Ag,从ITO阳极开始的第一层NPB为空穴传输层,第二层超薄的NPB为蓝色发光层,BCP为空穴阻挡层和激子阻挡层,Alq3为电子传输层.结果表明,器件电压在3V启亮,在16.5V时,器件的最高亮度达到15460cd·m-2;在4V时,器件达到最大流明效率为7.5lm·W-1,器件启亮后所发出的白光光谱在低电压时随电压变化有稍微的移动,但是都在白光范围内变化.在电压达到8V后Commission Internationale de l′Eclairage(国际照明委员会)(CIE)色坐标为(0.33,0.32),并且光谱及色坐标稳定,不随电压变化而改变,与最佳的白光坐标(0.33,0.33)几乎重合.同时,从机理上解释了光谱移动和效率衰减的原因,并探讨了载流子陷阱和能量传递的关系.展开更多
A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and c...A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.展开更多
The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is me...The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is measured,and then the densities of the interface and oxide traps are separated independently.The experimental results show that the hot carrier stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot carrier stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot carrier stress on the generating of interface and oxide traps,which help to understand the degradation and reliability of the SOI MOSFETs.展开更多
The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is ...The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.展开更多
A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degr...A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.展开更多
基金supported by the National Natural Science Foundation of China(22275021)the Beijing Municipal Natural Science Foundation(L234064)+2 种基金the Beijing Nova Program(20230484414)the Fundamental Research Funds for the Central UniversitiesKey Laboratory of Photochemical Conversion and Optoelectronic Materials,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences。
文摘As one of the most promising forms of light-emitting,long-persistent luminescence(LPL),that was first observed in ancient luminous pearls from the Yan dynasty in China,continues to exhibit renewed vitality across a wide range of optoelectronic applications,encompassing optical display,bioimaging,photonic technologies and photocatalysis in modern society[1].
文摘Ce^(3+)和Ce^(4+)在SrTiO_(3)中的插入对能带结构的缺陷诱导改性:一种高性能的太阳光驱动催化剂Defect-induced modification of band structure by the insertion of Ce^(3+)and Ce^(4+)in SrTiO_(3):A high-performance sunlight-driven photocatalyst领域:催化材料团队:墨西哥国立理工大学期刊:Applied Surface Science(impact factor:6.707)1区Ce^(3+)和Ce^(4+)离子成功取代了Pechini型溶胶-凝胶法合成的SrTiO_(3)纳米颗粒(NPs)的Sr^(2+)位点,并在750℃后退火。得到的Ce掺杂NPs平均粒径高达31.2±0.5 nm,表现出SrTiO_(3)的立方钙钛矿结构。根据晶体结构、价态、电子结构和光学性质的分析,Ce^(3+)/Ce^(4+)对诱导的表面缺陷对改善光吸收、电荷转移和表面化学吸附过程具有重要影响。因此,具有标称成分Sr_(0.97)Ce_(0.03)TiO_(3)的纳米颗粒在表面缺陷增强的光吸收和缺陷引起的载流子陷阱之间具有最佳平衡,在模拟阳光120分钟后表现出最高的光催化活性,去除了95.10%的亚甲基蓝染料。
文摘采用真空热蒸镀方法以4,4′-bis(carbazol-9-yl)biphenyl(CBP)为主体材料、以bis[2-(4-tert-butylphenyl)benzothiazolato-N,C2′]iridium(acetylacetonate)[(t-bt)2Ir(acac)]磷光染料为掺杂剂构成黄色发光层,制备了高效白光的有机电致发光器件(OLEDs).OLEDs的器件结构为indium tin oxide(ITO)/N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine(NPB)/CBP:(t-bt)2Ir(acac)/NPB/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/8-hydroxyquinoline aluminum(Alq3)/Mg∶Ag,从ITO阳极开始的第一层NPB为空穴传输层,第二层超薄的NPB为蓝色发光层,BCP为空穴阻挡层和激子阻挡层,Alq3为电子传输层.结果表明,器件电压在3V启亮,在16.5V时,器件的最高亮度达到15460cd·m-2;在4V时,器件达到最大流明效率为7.5lm·W-1,器件启亮后所发出的白光光谱在低电压时随电压变化有稍微的移动,但是都在白光范围内变化.在电压达到8V后Commission Internationale de l′Eclairage(国际照明委员会)(CIE)色坐标为(0.33,0.32),并且光谱及色坐标稳定,不随电压变化而改变,与最佳的白光坐标(0.33,0.33)几乎重合.同时,从机理上解释了光谱移动和效率衰减的原因,并探讨了载流子陷阱和能量传递的关系.
文摘A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.
文摘The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is measured,and then the densities of the interface and oxide traps are separated independently.The experimental results show that the hot carrier stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot carrier stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot carrier stress on the generating of interface and oxide traps,which help to understand the degradation and reliability of the SOI MOSFETs.
文摘The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.
文摘A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.
