高温超导电缆的本体结构及基本设计原理

作为一种新型的输电方式,高温超导输电是当前最为热点的研究方向之一。相比于传统的输电方式,高温超导技术输电在能效上更有优势。本文简要介绍了高温超导电缆的结构,重点介绍了支撑体、载流层及绝缘层设计的基本原理,为高温超导电缆的研究提供基础理论支撑。

Oxide Thickness Effects on n-MOSFETs Under On-State Hot-Carrier Stress

Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.

Characterization of Oxide Charge During Hot-Carrier Degradation of Ultrathin Gate pMOSFETs--Investigated by Charge Pumping Technique

The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.

Experimental Evidence of Interface-Trap-Related SILC in Ultrathin (4nm- and 2.5nm-Thick) n-MOSFET and p-MOSFET Under Hot-Carrier Stress

Stress-induced leakage current (SILC) of ultrathin gate oxide is investigated by observing the generation of interface traps for n-MOSFET and p-MOSFET under hot-carrier stress.It is found experimentally that there is linear correlation between the generation of interface traps and SILC for both types of MOSFET with different channel lengths (including 1,0.5,0.275,and 0.135μm) and different gate oxide thickness (4nm and 2.5nm).These experimental evidences show that the SILC has a strong dependence on interface traps.

Highly efficient visible-light photocatalytic H2 evolution over 2D–2D Cd S/Cu7S4 layered heterojunctions

Converting solar energy into clean and sustainable chemical fuels is a promising strategy for exploiting renewable energy.The application of photocatalytic water splitting technology in hydrogen production is important for sustainable energy development and environmental protection.In this study,for the first time,2D Cu7S4 co-catalysts were coupled on the surface of a CdS nanosheet photocatalyst by a one-step ultrasonic-assisted electrostatic self-assembly method at room temperature.The as-fabricated 2D^-2D CdS/Cu7S4 layered heterojunctions were demonstrated to be advanced composite photocatalysts that enhance the water splitting efficiency toward hydrogen production.The highest hydrogen evolution rate of the 2D^-2D CdS/2%Cu7S4 binary heterojunction photocatalyst was up to 27.8 mmol g^-1 h^-1 under visible light irradiation,with an apparent quantum efficiency of 14.7%at 420 nm,which was almost 10.69 times and 2.65 times higher than those of pure CdS nanosheets(2.6 mmol g^-1 h^-1)and CdS-2%CuS(10.5 mmol g^-1 h^-1),respectively.The establishment of the CdS/Cu7S4 binary-layered heterojunction could not only enhance the separation of photogenerated electron-hole(e--h+)pairs,improve the transfer of photo-excited electrons,and prolong the life-span of photo-generated electrons,but also enhance the light absorption and hydrogen-evolution kinetics.All these factors are important for the enhancement of the photocatalytic activity.Expectedly,the 2D^-2D interface coupling strategy based on CdS NSs can be extensively exploited to improve the hydrogen-evolution activity over various kinds of conventional semiconductor NSs.

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.

A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress

A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.

Wind Force Coefficients for Designing Porous Canopy Roofs

Wind force coefficients for designing porous canopy roofs have been investigated based on a series of wind tunnel experiments. Gable, troughed and mono-sloped roofs were tested. The roof models were made of 0.5 mm thick perforated duralumin plates, the porosity of which was changed from 0 to about 0.4. Overall aerodynamic forces and moments acting on the roof model were measured in a turbulent boundary layer with a six-component force balance for various wind directions. The results indicate that the wind loads on canopy roofs generally decrease with an increase in porosity of the roof. Assuming that the roof is rigid and supported by the four corner columns with no walls, the axial forces induced in the columns are regarded as the most important load effect for discussing the design wind loads. Two loading patterns causing the maximum tension and compression in the columns are considered. Based on a combination of the lift and moment coefficients, the design wind force coefficients on the windward and leeward halves of the roof are presented for the two loading patterns as a function of the roof pitch and porosity. The effect of porosity is taken into account as a reduction factor of the wind loads.

Synergistic effect of atomic layer deposition-assisted cocatalyst and crystal facet engineering in SnS2 nanosheet for solar water oxidation

The severe bulk recombination and sluggish oxygen evolution reaction(OER)dynamics of photoanodes severely restrict the application of photoelectrochemical(PEC)devices.To solve these two problems,crystallographic facet orientation and cocatalyst emergence with a high-quality photoanode/cocatalyst interface were realized through an air annealing-assisted strategy to treat atomic layer deposition(ALD)-modified SnSnanosheet arrays.Based on experimental observations and theoretical calculations,the reduced(001)crystal facet of SnSdecreases the recombination of photogenerated carriers in the bulk and improves the carrier separation of the photoanode.Moreover,the unexpectedly formed ZnTiOSfilm decreases the overpotential of the surface OER,reduces interface recombination,and extends the carrier lifetime.These synergistic effects lead to significantly enhanced PEC performance,with a high photocurrent density of 1.97 mA cm^(-2)at 1.23 V vs.reversible hydrogen electrode(RHE)and a low onset potential of 0.21 V vs.RHE,which are superior to reported mostly SnS-based photoanodes.

Graphdiyne oxide-accelerated charge carrier transfer and separation at the interface for efficient binary organic solar cells

Interfacial engineering for the regulation of the charge carrier dynamics in solar cells is a critical factor in the fabrication of high-efficiency devices.Based on the successful preparation of highly dispersible graphdiyne oxide(GDYO)with a large number of functional groups,we fabricated organic solar cells employing GDYO-modified poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate)(PEDOT:PSS)as hole transport materials.Results show that theπ±πinteraction between GDYO and PEDOT:PSS is beneficial to the formation of an optimized charge carrier transfer channel and improves the conductivity and charge carrier mobility in the hole transport layer.Moreover,the improved interfacial contact contributes to the suppression of charge carrier recombination and the elevation of charge carrier extraction between the hole transport layer and the active layer.More importantly,the occurrence of charge carrier separation benefits from the optimized morphology of the active layer,which efficiently improves the performance,as proven by the results of transient absorption measurements.Therefore,with the holistic management approach to the multiobjective optimization of the charge carrier dynamics,a photoelectric conversion efficiency of 17.5%(with the certified value of 17.2%)is obtained for binary organic solar cells.All of these results indicate the potential application of the functionalized graphdiyne in the field of organic optoelectronic devices.

A low-temperature TiO2/SnO2 electron transport layer for high-performance planar perovskite solar cells

Conventional titanium oxide(TiO2) as an electron transport layer(ETL) in hybrid organic-inorganic perovskite solar cells(PSCs) requires a sintering process at a high temperature to crystalize, which is not suitable for flexible PSCs and tandem solar cells with their low-temperatureprocessed bottom cell. Here, we introduce a low-temperature solution method to deposit a TiO2/tin oxide(SnO2) bilayer towards an efficient ETL. From the systematic measurements of optical and electronic properties, we demonstrate that the TiO2/SnO2 ETL has an enhanced charge extraction ability and a suppressed carrier recombination at the ETL/perovskite interface, both of which are beneficial to photo-generated carrier separation and transport. As a result, PSCs with TiO2/SnO2 bilayer ETLs present higher photovoltaic performance of the baseline cells compared with their TiO2 and SnO2 single-layer ETL counterparts. The champion PSC has a power conversion efficiency(PCE) of 19.11% with an open-circuit voltage(Voc)of 1.15 V, a short-circuit current density(Jsc) of 22.77 mA cm^-2,and a fill factor(FF) of 72.38%. Additionally, due to the suitable band alignment of the TiO2/SnO2 ETL in the device, a high Vocof 1.18 V is achieved. It has been proven that the TiO2/SnO2 bilayer is a promising alternative ETL for high efficiency PSCs.

Light-emitting field-effect transistors with EQE over 20%enabled by a dielectric-quantum dots-dielectric sandwich structure

Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost.Considerable efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport layers.Here,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich structure.Such DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive layer.Also,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge transfer.The DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.

Exceptionally efficient deep blue anthracene-based luminogens:design,synthesis,photophysical,and electroluminescent mechanisms

Achieving high-efficiency deep blue emitter with CIE_(y)<0.06(CIE,Commission Internationale de L’Eclairage)and external quantum efficiency(EQE)>10%has been a long-standing challenge for traditional fluorescent materials in organic light-emitting diodes(OLEDs).Here,we report the rational design and synthesis of two new deep blue luminogens:4-(10-(4’-(9 H-carbazol-9-yl)-2,5-dimethyl-[1,1’-biphe nyl]-4-yl)anthracen-9-yl)benzonitrile(2 M-ph-pCzAnBzt)and 4-(10-(4-(9 H-carbazol-9-yl)-2,5-dimethyl phenyl)anthracen-9-yl)benzonitrile(2 M-pCzAnBzt).In particular,2 M-ph-pCzAnBzt produces saturated deep blue emissions in a non-doped electroluminescent device with an exceptionally high EQE of 10.44% and CIE_(x,y)(0.151,0.057).The unprecedented electroluminescent efficiency is attributed to the combined effects of higher-order reversed intersystem crossing and triplet-triplet up-conversion,which are supported by analysis of theoretical calculation,triplet sensitization experiments,as well as nanosecond transient absorption spectroscopy.This research offers a new approach to resolve the shortage of high efficiency deep blue fluorescent emitters.

Green phosphorescent organic light-emitting devices based on different electron transport layers combining with fluorescent sub-monolayer

We report a small molecule host of 4,4(-N,N)-dicarbazole-biphenyl(CBP) doped with 8% tris(2-phenylpyridine) iridium(Irppy3) for use in efficient green phosphorescent organic light-emitting devices(PHOLEDs) combined with different electron transport layers of Alq and BAlq. The PHOLEDs exhibit maximum current efficiency and power efficiency of 19.8 cd/A and 6.21 lm/W, respectively. The high performance of such PHOLEDs is attributed to the better electron mobile ability of BAlq and sub-monolayer quinacridone(QAD) as carrier trapping layer and equal charge carrier mobilities of hole and electron to form the broad carrier recombination zone in the emitting layer, which can 1reduce the triplet-triplet annihilation and improve the efficiency of the device.

Green perovskite light-emitting diodes with simultaneous high luminance and quantum efficiency through charge injection engineering

Metal halide perovskite light emitting diodes(PeLEDs)have recently experienced rapid development due to the tunable emission wavelengths,narrow emission linewidth and low material cost.To achieve stateof-the-art performance,the high photoluminescence quantum yield(PLQY)of the active emission layer,the balanced charge injection,and the optimized optical extraction should be considered simultaneously.Multiple chemical passivation strategies have been provided as controllable and efficient methods to improve the PLQY of the perovskite layer.However,high luminance under large injection current and high external quantum efficiency(EQE)can hardly be achieved due to Auger recombination at high carrier density.Here,we decreased the electron injection barrier by tuning the Fermi-level of the perovskite,leading to a reduced turn on voltage.Through molecular doping of the hole injection material,a more balanced hole injection was achieved.At last,a device with modified charge injection realizes high luminance and quantum efficiency simultaneously.The best device exhibits luminance of 55,000 cd m^-2 EQE of 8.02%at the working voltage of 2.65 V,current density of 115 mA cm^-2,and shows EQE T50 stability around 160 min at 100 mA cm^-2 injection current density.

Promising Cd-free double buffer layer in CZTSSe thin film solar cells

Zn(O,S)film is widely used as a Cd-free buffer layer for kesterite thin film solar cells due to its low-cost and eco-friendly characteristics.However,the low carrier concentration and conductivity of Zn(O,S)will deteriorate the device performance.In this work,an additional buffer layer of In2S3 is introduced to modify the properties of the Zn(O,S)layer as well as the CZTSSe layer via a post-annealing treatment.The carrier concentrations of both the Zn(O,S)and CZTSSe layers are increased,which facilitates the carrier separation and increases the open circuit voltage(VOC).It is also found that ammonia etching treatment can remove the contamination and reduce the interface defects,and there is an increase of the surface roughness of the In2S3 layer,which works as an antireflection layer.Consequently,the efficiency of the CZTSSe solar cells is improved by 24%after the annealing and etching treatments.Simulation and experimental results show that a large band offset of the In2S3 layer and defect energy levels in the Zn(O,S)layer are the main properties limiting the fill factor and efficiency of these CZTSSe devices.This study affords a new perspective for the carrier concentration enhancement of the absorber and buffer layers by In-doping,and it also indicates that In2S3/Zn(O,S)is a promising Cd-free hybrid buffer layer for high-efficiency kesterite solar cells.

Model for increased efficiency of CIGS solar cells by a stepped distribution of carrier density and Ga in the absorber layer

In this paper, several structures for multilayer Cu(In1-xGax) Se2 (CIGS) thin film solar cells are proposed to achieve high conversion efficiency. All of the modeling and simulations were based on the actual data of experimentally produced CIGS cells reported in the literature. In standard CIGS cells with a single absorber layer, the effects of acceptor density and Ga content on device performance were studied, and then optimized for maximum conversion efficiency. The same procedure was performed for cells with two and three sectioned CIGS absorber layers in which Cu and/or Ga contents were varied within each consecutive section. This produces an internal additional electric field within the absorber layer, which resulted in an increase in carrier collection for longer wavelength photons, and hence, improvement in the conversion efficiency of the cell. An increase of approximately 3% in efficiency is predicted for cells with two layer absorbers. For multilayer cells in which Cu and Ga distribution were stepped simultaneously, the improvement could be approximately 3.5%. This improvement is due to; enhanced carrier collection for longer-wavelength photons, and reduced recombination at the heterojunction and back regions of the cell. These results are confirmed by the physics of the cells.