The output power of a photovoltaic system largely depends on the amount of solar radiation that can be received by the photovoltaic panel, and the solar radiation energy reaching the ground is affected by the radiatio...The output power of a photovoltaic system largely depends on the amount of solar radiation that can be received by the photovoltaic panel, and the solar radiation energy reaching the ground is affected by the radiation transmission process. However, in engineering practice, numerical simulation prediction schemes tend to adopt a kind of radiation scheme, and the prediction of solar radiation and photovoltaic power cannot always meet the prediction accuracy. In this paper, NCEP-NCAR reanalysis data are used as the initial field, and a variety of radiation parameterization schemes are used to produce simulations for the Xinjiang area. Through analysis of examples, it is found that the simulation results differ greatly depending on the radiation parameterization scheme employed, with the maximum absolute error of the total radiation and the predicted power being 106.67 W m-2 and 3.5 MW, respectively. Meanwhile, the mean absolute percentage error of the total radiation ranges from 8.6% to 17.3%, and that of the predicted power from 11.3% to 20.2%. Having analyzed the simulation results of the different radiation parameterization schemes, we conclude that the RRTM/Dudhia and CAM （Community Atmospheric Model） schemes are the most appropriate when under clear-weather conditions.展开更多
The characteristics of low frequency electrical noise, voltage current ( V I ) and electrical derivation for 980 nm InGaAsP/InGaAs/GaAs high power double quantum well lasers(DQWLs) are measured under different conditi...The characteristics of low frequency electrical noise, voltage current ( V I ) and electrical derivation for 980 nm InGaAsP/InGaAs/GaAs high power double quantum well lasers(DQWLs) are measured under different conditions. The correlation of the low frequency electrical noise with surface non radiative current of devices is discussed. The results indicate the low frequency electrical noise of 980 nm DQWLs with high power is mainly 1/ f noise and has good relation with the device surface current at low injection.展开更多
基金funded by the National Natural Science Foundation of ChinaNational Research Council of Thailand Joint Research Project[grant number 51561145011]a State Grid Corporation of Science and Technology Project[grant number NY71-15-056]
文摘The output power of a photovoltaic system largely depends on the amount of solar radiation that can be received by the photovoltaic panel, and the solar radiation energy reaching the ground is affected by the radiation transmission process. However, in engineering practice, numerical simulation prediction schemes tend to adopt a kind of radiation scheme, and the prediction of solar radiation and photovoltaic power cannot always meet the prediction accuracy. In this paper, NCEP-NCAR reanalysis data are used as the initial field, and a variety of radiation parameterization schemes are used to produce simulations for the Xinjiang area. Through analysis of examples, it is found that the simulation results differ greatly depending on the radiation parameterization scheme employed, with the maximum absolute error of the total radiation and the predicted power being 106.67 W m-2 and 3.5 MW, respectively. Meanwhile, the mean absolute percentage error of the total radiation ranges from 8.6% to 17.3%, and that of the predicted power from 11.3% to 20.2%. Having analyzed the simulation results of the different radiation parameterization schemes, we conclude that the RRTM/Dudhia and CAM （Community Atmospheric Model） schemes are the most appropriate when under clear-weather conditions.
文摘The characteristics of low frequency electrical noise, voltage current ( V I ) and electrical derivation for 980 nm InGaAsP/InGaAs/GaAs high power double quantum well lasers(DQWLs) are measured under different conditions. The correlation of the low frequency electrical noise with surface non radiative current of devices is discussed. The results indicate the low frequency electrical noise of 980 nm DQWLs with high power is mainly 1/ f noise and has good relation with the device surface current at low injection.
