Detrimental defects on perovskite grain boundaries(GBs)are critical factors that lead to non-radiative recombination and hysteresis.In this work,triazine-graphdiyne(Tra-GD),a nitrogen-rich two-dimensional(2 D)material...Detrimental defects on perovskite grain boundaries(GBs)are critical factors that lead to non-radiative recombination and hysteresis.In this work,triazine-graphdiyne(Tra-GD),a nitrogen-rich two-dimensional(2 D)material,was incorporated into the active layer of perovskite to modify the GBs.Tra-GD was found to distribute evenly over the bulk of the perovskite and has a strong interaction with the Pb^2+ exposed at GBs,which enables it to effectively passivate GB defects and prevent ion migration.The results of Kelvin probe force microscopy and photoluminescence studies proved that the highly conjugated Tra-GD located at GBs could promote charge extraction and transport.Benefiting from defect passivation and more efficient carrier transport,the Tra-GD based device showed less non-radiative recombination loss.Consequently,the resultant device presented negligible hysteresis and yielded a high power conversion efficiency(PCE)of 20.33%in the MAPbI3-based perovskite solar cell.This approach was extended to the FAPbI3 system with a PCE of 21.16%.Our Tra-GD passivation strategy provides a useful approach to effectively improving the device performance and addressing hysteresis issues.展开更多
Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost...Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost.Considerable efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport layers.Here,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich structure.Such DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive layer.Also,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge transfer.The DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.展开更多
基金supported by the Natural Science Foundation of China(51672288 and 21975273)Taishan Scholars Program of Shandong Province+2 种基金Youth Innovation Promotion Association of Chinese Academy of Sciences,Dalian National Laboratory for Clean Energy(DICP QIBEBT UN201705)Scientific Research Cooperation Foundation of Qingdao Institute of Bioenergy and Bioprocess Technology,Chinese Academy of Sciencesthe support of Qingdao Postdoctoral Application Research Project(2018183 and 2018186)。
文摘Detrimental defects on perovskite grain boundaries(GBs)are critical factors that lead to non-radiative recombination and hysteresis.In this work,triazine-graphdiyne(Tra-GD),a nitrogen-rich two-dimensional(2 D)material,was incorporated into the active layer of perovskite to modify the GBs.Tra-GD was found to distribute evenly over the bulk of the perovskite and has a strong interaction with the Pb^2+ exposed at GBs,which enables it to effectively passivate GB defects and prevent ion migration.The results of Kelvin probe force microscopy and photoluminescence studies proved that the highly conjugated Tra-GD located at GBs could promote charge extraction and transport.Benefiting from defect passivation and more efficient carrier transport,the Tra-GD based device showed less non-radiative recombination loss.Consequently,the resultant device presented negligible hysteresis and yielded a high power conversion efficiency(PCE)of 20.33%in the MAPbI3-based perovskite solar cell.This approach was extended to the FAPbI3 system with a PCE of 21.16%.Our Tra-GD passivation strategy provides a useful approach to effectively improving the device performance and addressing hysteresis issues.
基金support from the National Natural Science Foundation of China(62174104,61735004,and 12174086)the National Key Research and Development Program of China(2016YFB0401702)the Shanghai Science and Technology Committee(19010500600)。
文摘Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost.Considerable efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport layers.Here,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich structure.Such DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive layer.Also,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge transfer.The DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.
