Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose （TID） radiation effects. The leakage current...Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose （TID） radiation effects. The leakage current, threshold voltage shift, and transconductance of the devices are monitored before and after T-ray irradiation. Different device bias conditions are used during irradiation. The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures. The impact of the layout on TID effects on pMOS devices is slight and can be neglected.展开更多
The alkali halide crystals exhibit significant TL （thermoluminescence） properties when exposed to ionizing radiation. The defects in crystals can be produced in high concentration by means of chemical impurities, ra...The alkali halide crystals exhibit significant TL （thermoluminescence） properties when exposed to ionizing radiation. The defects in crystals can be produced in high concentration by means of chemical impurities, radiation, mechanical work and others processes. This study is concerned with the TL properties of quaternary mixtures of alkali halide crystals when they are irradiated with beta and gamma-rays. The samples were made mixing KCI, KBr, RbCI, RbBr salts doped with divalent europium （Eu2＋）, by the Czochralski method sintering at 400 ~C during 6 hours in a N2 atmosphere. The samples were exposed to beta and gamma rays. We present the TL glow curves, demonstrating that the nature of the defects in the crystals can be produced by trapping states and recombination mechanisms. The highest temperature TL curves are the most interesting due to possible applications in dosimetry and optical energy storage.展开更多
In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga^＋ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowi...In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga^＋ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors （FETs） shift in the negative gate voltage direction after Ga^＋ ion irradiation. Smaller threshold voltages, achieved by Ga^＋ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga＋ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to -106. The results indicate that Ga^＋ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.展开更多
文摘Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose （TID） radiation effects. The leakage current, threshold voltage shift, and transconductance of the devices are monitored before and after T-ray irradiation. Different device bias conditions are used during irradiation. The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures. The impact of the layout on TID effects on pMOS devices is slight and can be neglected.
文摘The alkali halide crystals exhibit significant TL （thermoluminescence） properties when exposed to ionizing radiation. The defects in crystals can be produced in high concentration by means of chemical impurities, radiation, mechanical work and others processes. This study is concerned with the TL properties of quaternary mixtures of alkali halide crystals when they are irradiated with beta and gamma-rays. The samples were made mixing KCI, KBr, RbCI, RbBr salts doped with divalent europium （Eu2＋）, by the Czochralski method sintering at 400 ~C during 6 hours in a N2 atmosphere. The samples were exposed to beta and gamma rays. We present the TL glow curves, demonstrating that the nature of the defects in the crystals can be produced by trapping states and recombination mechanisms. The highest temperature TL curves are the most interesting due to possible applications in dosimetry and optical energy storage.
文摘In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga^＋ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors （FETs） shift in the negative gate voltage direction after Ga^＋ ion irradiation. Smaller threshold voltages, achieved by Ga^＋ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga＋ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to -106. The results indicate that Ga^＋ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.
