The radiation influences on electrical parameters of4H-SiC vertical double-implanted metal-oxide-semiconductor field effect transistor( VDMOS) are studied. By simulations on SRIM software and SILVACO software, the ele...The radiation influences on electrical parameters of4H-SiC vertical double-implanted metal-oxide-semiconductor field effect transistor( VDMOS) are studied. By simulations on SRIM software and SILVACO software, the electrical parameters shifts of the device with defects in different regions are observed. The results indicate that the defects in different regions induced by radiations lead to different degradations of the electrical parameters. Non-ionization bulk defects in the JFET region make the drain-source on-state resistance Rdson increase,and those near the impact ionization center make the breakdown voltage Vbreakdownincrease. Moreover,the radiationinduced SiC/SiO2 interface defects,known as negative interface charges or positive interface charges,influence the electrical parameters significantly as well. The positive interface charges along the SiC/SiO2 interface above the channel region lead to a decrease in threshold voltage Vth,Rdsonand Vbreakdown,while positive interface charges along the Si C/Metal interface above the main junction of the terminal only leads to the decrease in Vbreakdown. The negative interface charges along the SiC/SiO2 interface above the channel region can make Vth,Rdsonand Vbreakdownincrease.展开更多
In the present paper was investigated the influence of the surface geometry on the amount of solar radiation arriving on that surface. The total, beam and diffuse radiation incident onto a surface was simulated using ...In the present paper was investigated the influence of the surface geometry on the amount of solar radiation arriving on that surface. The total, beam and diffuse radiation incident onto a surface was simulated using WINSUN software, which is a simulation tool developed at Lund Technical University, Sweden. The irradiation analysis are made for Maputo, latitude 25°58＇ South, longitude 32°36＇ East, Mozambique. The climate date was derived from Meteonorm files. Such study has practical value since the output of solar systems is depending upon the amount of solar radiation reaching to the surface of the collector.展开更多
基金The National Science and Technology Special Public Industry(Nos.GYHY200706003,GYHY201006043)The Project Development Plan of Science and Technology in Jilin Province(No.20150520093JH)
基金The Foundation of State Key Laboratory of Widebandgap Semiconductor Power Electronics Devices(No.2017KF003)the Fundamental Research Funds for the Central Universities
文摘The radiation influences on electrical parameters of4H-SiC vertical double-implanted metal-oxide-semiconductor field effect transistor( VDMOS) are studied. By simulations on SRIM software and SILVACO software, the electrical parameters shifts of the device with defects in different regions are observed. The results indicate that the defects in different regions induced by radiations lead to different degradations of the electrical parameters. Non-ionization bulk defects in the JFET region make the drain-source on-state resistance Rdson increase,and those near the impact ionization center make the breakdown voltage Vbreakdownincrease. Moreover,the radiationinduced SiC/SiO2 interface defects,known as negative interface charges or positive interface charges,influence the electrical parameters significantly as well. The positive interface charges along the SiC/SiO2 interface above the channel region lead to a decrease in threshold voltage Vth,Rdsonand Vbreakdown,while positive interface charges along the Si C/Metal interface above the main junction of the terminal only leads to the decrease in Vbreakdown. The negative interface charges along the SiC/SiO2 interface above the channel region can make Vth,Rdsonand Vbreakdownincrease.
文摘In the present paper was investigated the influence of the surface geometry on the amount of solar radiation arriving on that surface. The total, beam and diffuse radiation incident onto a surface was simulated using WINSUN software, which is a simulation tool developed at Lund Technical University, Sweden. The irradiation analysis are made for Maputo, latitude 25°58＇ South, longitude 32°36＇ East, Mozambique. The climate date was derived from Meteonorm files. Such study has practical value since the output of solar systems is depending upon the amount of solar radiation reaching to the surface of the collector.
