On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating fro...On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.展开更多
A Monolithic integrated phase locked-loop （PLL） with a low phase noise is proposed in this paper. Several techniques are utilized to improve the performance of the PLL which works at the milli- meter-wave band. The ...A Monolithic integrated phase locked-loop （PLL） with a low phase noise is proposed in this paper. Several techniques are utilized to improve the performance of the PLL which works at the milli- meter-wave band. The on-chip high-Q eoplanar waveguides （CPWs） are utilized in the resonant tank and the differential current amplifier with a resonator is used to realize the VCO. In the output buffer circuit, several stages of cascaded source-followers connect and differential amplifiers are adopted to improve the driving capability of the PLL＇ s output signals. An improved analog multiplier topology is also used in the PD circuit to improve the gain of the PD. The proposed PLL is realized with a 0.2p, m GaAs pseudomorphie high electron mobility transistor （PHEMT） process. At 10 kHz offset from the center frequency, the measured output phase noise of the PLL output is only -88.83dBc/Hz. The circuit exhibits a low root mean sauare （RMS） litter of 1.68Ds.展开更多
文摘On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.
基金Supported by the National Natural Science Foundation of China （No. 61106024, 60901012, 60976029） , the National High Technology Research and Development Program of China （No. 2011AA010301 ）, and the Science and Technology Program of Southeast University （No. K J2010402 ）.
文摘A Monolithic integrated phase locked-loop （PLL） with a low phase noise is proposed in this paper. Several techniques are utilized to improve the performance of the PLL which works at the milli- meter-wave band. The on-chip high-Q eoplanar waveguides （CPWs） are utilized in the resonant tank and the differential current amplifier with a resonator is used to realize the VCO. In the output buffer circuit, several stages of cascaded source-followers connect and differential amplifiers are adopted to improve the driving capability of the PLL＇ s output signals. An improved analog multiplier topology is also used in the PD circuit to improve the gain of the PD. The proposed PLL is realized with a 0.2p, m GaAs pseudomorphie high electron mobility transistor （PHEMT） process. At 10 kHz offset from the center frequency, the measured output phase noise of the PLL output is only -88.83dBc/Hz. The circuit exhibits a low root mean sauare （RMS） litter of 1.68Ds.
