Spectroscopic ellipsometry (SE), photocarrier radiometry (PCR) and photoluminescence (PL) techniques were employed to measure the ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implanta...Spectroscopic ellipsometry (SE), photocarrier radiometry (PCR) and photoluminescence (PL) techniques were employed to measure the ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5-5 keV, at a dose of 1×1015 As+ /cm 2 and spike annealing. Experimentally the damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 to 20 m. The PCR amplitude decreased monotonically with the increasing implantation energy. The experimental results also showed that the PCR amplitudes of post-annealed USJ wafers were greatly enhanced, compared to the non-implanted and non-annealed substrate wafer. The PL measurements showed the enhanced PCR signals were attributed to the band-edge emissions of silicon. For explaining the PL enhancement, the electronic transport properties of USJ wafers were extracted via multi-wavelength PCR experiment and fitting. The fitted results showed the decreasing surface recombination velocity and the decreasing diffusion coefficient of the implanted layer contributed to the PCR signal enhancement with the decreasing implantation energy. SE, PCR and PL were proven to be non-destructive metrology tools for characterizing ultra-shallow junctions.展开更多
A series of alkali metal salts doped pluronic block copolymer F127 were used as electron injection/transport layers (ETLs) for polymer light-emitting diodes with poly[2-(4-(3′,7′-dimethyloctyloxy)-phenyl)-p-phenylen...A series of alkali metal salts doped pluronic block copolymer F127 were used as electron injection/transport layers (ETLs) for polymer light-emitting diodes with poly[2-(4-(3′,7′-dimethyloctyloxy)-phenyl)-p-phenylenevinylene] (P-PPV) as the emission layer. It was found that the electron transport capability of F127 can be effectively enhanced by doping with alkali metal salts. By using Li2CO3 (15%) doped F127 as ETL, the resulting device exhibited improved performance with a maximum luminous efficiency (LE) of 13.59 cd/A and a maximum brightness of 5529 cd/m2, while the device with undoped F127 as ETL only showed a maximum LE of 8.78 cd/A and a maximum brightness of 2952 cd/m2. The effects of the doping concentration, cations and anions of the alkali metal salts on the performance of the resulting devices were investigated. It was found that most of the alkali metal salt dopants can dramatically enhance the electron transport capability of F127 ETL and the performance of the resulting devices was greatly improved.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos. 61076090 and 60676058)
文摘Spectroscopic ellipsometry (SE), photocarrier radiometry (PCR) and photoluminescence (PL) techniques were employed to measure the ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5-5 keV, at a dose of 1×1015 As+ /cm 2 and spike annealing. Experimentally the damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 to 20 m. The PCR amplitude decreased monotonically with the increasing implantation energy. The experimental results also showed that the PCR amplitudes of post-annealed USJ wafers were greatly enhanced, compared to the non-implanted and non-annealed substrate wafer. The PL measurements showed the enhanced PCR signals were attributed to the band-edge emissions of silicon. For explaining the PL enhancement, the electronic transport properties of USJ wafers were extracted via multi-wavelength PCR experiment and fitting. The fitted results showed the decreasing surface recombination velocity and the decreasing diffusion coefficient of the implanted layer contributed to the PCR signal enhancement with the decreasing implantation energy. SE, PCR and PL were proven to be non-destructive metrology tools for characterizing ultra-shallow junctions.
基金supported by the National Natural Science Foundation of China (21125419, 50990065, 51010003, 51073058, and 20904011)National Research Project (2009CB623601 and 2009CB930604)
文摘A series of alkali metal salts doped pluronic block copolymer F127 were used as electron injection/transport layers (ETLs) for polymer light-emitting diodes with poly[2-(4-(3′,7′-dimethyloctyloxy)-phenyl)-p-phenylenevinylene] (P-PPV) as the emission layer. It was found that the electron transport capability of F127 can be effectively enhanced by doping with alkali metal salts. By using Li2CO3 (15%) doped F127 as ETL, the resulting device exhibited improved performance with a maximum luminous efficiency (LE) of 13.59 cd/A and a maximum brightness of 5529 cd/m2, while the device with undoped F127 as ETL only showed a maximum LE of 8.78 cd/A and a maximum brightness of 2952 cd/m2. The effects of the doping concentration, cations and anions of the alkali metal salts on the performance of the resulting devices were investigated. It was found that most of the alkali metal salt dopants can dramatically enhance the electron transport capability of F127 ETL and the performance of the resulting devices was greatly improved.
