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Al_xGa_(1-x)N/GaN调制掺杂异质结构的子带性质研究 被引量:4
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作者 郑泽伟 沈波 +8 位作者 桂永胜 仇志军 唐宁 蒋春萍 张荣 施毅 郑有炓 郭少令 褚君浩 《物理学报》 SCIE EI CAS CSCD 北大核心 2004年第2期596-600,共5页
通过低温和强磁场下的磁输运测量研究了Al0 2 2 Ga0 78N GaN调制掺杂异质结构中 2DEG的子带占据性质和子带输运性质 .在该异质结构的磁阻振荡中观察到了双子带占据现象 ,并发现 2DEG的总浓度随第二子带浓度的变化呈线性关系 .得到了... 通过低温和强磁场下的磁输运测量研究了Al0 2 2 Ga0 78N GaN调制掺杂异质结构中 2DEG的子带占据性质和子带输运性质 .在该异质结构的磁阻振荡中观察到了双子带占据现象 ,并发现 2DEG的总浓度随第二子带浓度的变化呈线性关系 .得到了该异质结构中第二子带被 2DEG占据的阈值电子浓度为 7 3× 10 1 2 cm- 2 .采用迁移率谱技术得到了不同样品的分别对应于第一和第二子带的输运迁移率 .发现当样品产生应变弛豫时第一子带的电子迁移率骤然下降 ,而且第二子带的电子迁移率远大于第一子带的电子迁移率 .用电子波函数分布和应变弛豫时的失配位错散射解释了上述现象 .同时进一步说明了界面粗糙散射和合金无序散射是决定AlxGa1 -xN GaN异质结构中 展开更多
关键词 铝镓氮/氮化镓异质结 二维电子气 子带占据 输运迁移率 测量 磁阻振荡 阈值电子浓度
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Continuous and highly ordered organic semiconductor thin films via dip-coating:the critical role of meniscus angle 被引量:1
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作者 Xuanyu Liu Yu Zhang +2 位作者 Xiaotao Zhang Rongjin Li Wenping Hu 《Science China Materials》 SCIE EI CSCD 2020年第7期1257-1264,共8页
Dip-coating is a low-cost,high-throughput technique for the deposition of organic semiconductors over large area on various substrates.Tremendous studies have been done and many parameters such as withdrawal speed,sol... Dip-coating is a low-cost,high-throughput technique for the deposition of organic semiconductors over large area on various substrates.Tremendous studies have been done and many parameters such as withdrawal speed,solvent type and solution concentration have been investigated.However,most of the depositions were ribbons or dendritic crystals with low coverage of the substrate due to the ignorance of the critical role of dynamic solution-substrate interactions during dip-coating.In this study,meniscus angle(MA)was proposed to quantify the real-time in-situ solutionsubstrate interactions during dip-coating.By proper surface treatment of the substrate,the value of MA can be tuned and centimeter-sized,continuous and highly ordered organic semiconductor thin films were achieved.The charge transport properties of the continuous thin films were investigated by the construction of organic field-effect transistors.Maximum(average)hole mobility up to 11.9(5.1)cm2V-1s-1was obtained.The average mobility was 82%higher than that of ribbon crystals,indicating the high crystallinity of the thin films.Our work reveals the critical role of dynamic solutionsubstrate interactions during dip-coating.The ability to produce large-area,continuous and highly ordered organic semiconductor thin films by dip-coating could revival the old technique for the application in various optoelectronics. 展开更多
关键词 organic field-effect transistor DIP-COATING meniscus angle charge transport MOBILITY
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Simulation Study of the Electron and Hole Transport in a CNTFET
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作者 A.Bahari M.Amiri 《Communications in Theoretical Physics》 SCIE CAS CSCD 2013年第1期121-124,共4页
In this work we have investigated electron and hole transport through zig zag carbon nanotubes by solving Boltzmann Transport Equation(BTE).We find that the mobility of electrons is rather greater than holes.Carbo nan... In this work we have investigated electron and hole transport through zig zag carbon nanotubes by solving Boltzmann Transport Equation(BTE).We find that the mobility of electrons is rather greater than holes.Carbo nanotubes with longer diameter can carry higher current.Normally,transport of electrons(or holes) is dominated by scattering events,which relax the carrier momentum in an effort to bring the conducting material to equilibrium. 展开更多
关键词 TRANSPORT NANOTUBES BTE
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