针对新能源领域对开关变换器具有宽电压增益范围的要求,提出一种多模式变频宽输出LLC变换器。该变换器原边为全桥结构,副边整流器为两级倍压结构,通过控制副边开关管的导通与截止,具有3种不同的电路模式,其增益比为1∶2∶4。各种模式对...针对新能源领域对开关变换器具有宽电压增益范围的要求,提出一种多模式变频宽输出LLC变换器。该变换器原边为全桥结构,副边整流器为两级倍压结构,通过控制副边开关管的导通与截止,具有3种不同的电路模式,其增益比为1∶2∶4。各种模式对应不同的输出电压等级,采用变频控制方式,变换器可以实现50~430 V的宽输出电压范围。多种模式切换,使得变换器具有较窄的开关频率范围(65~100 k Hz)。通过合理的参数设计,变换器可以实现原边开关管零电压开通(ZVS)和副边二极管零电流关断(ZCS)。新的电路拓扑结构降低了副边二极管和副边电容的电压应力,仅为输出电压的一半。在理论和仿真分析基础上,制作了1.3 kW的实验样机。实验结果表明,该变换器可以在保证效率的同时实现宽输出电压范围,适合应用于宽输出场合。展开更多
A novel Step Oxide-Bypassed （SOB） trench VDMOS structure is designed based on the Oxide-Bypassed concept proposed by Liang Y C. This structure is suitable for breakdown voltage below 300V to obtain ultra-low specifi...A novel Step Oxide-Bypassed （SOB） trench VDMOS structure is designed based on the Oxide-Bypassed concept proposed by Liang Y C. This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance. The main feature of this structure is the various thicknesses of sidewall oxide,which modulate electric field distribution in the drift region and the charge compensation effect. As a result, the breakdown voltage is increased no less than 20% due to the more uniform electric field of the drift region,while the specific on-resistance was reduced by 40%-60% for the step oxide bypassed compared with the oxide-bypassed structure.展开更多
A Geiger mode planar InGaAs/InP avalanche photodiode （APD） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced...A Geiger mode planar InGaAs/InP avalanche photodiode （APD） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10^5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes.展开更多
The dynamic responses of a multilayer piezoelectric infinite hollow cylinder under electric potential excitation were obtained. The method of superposition was used to divide the solution into two parts, the part sati...The dynamic responses of a multilayer piezoelectric infinite hollow cylinder under electric potential excitation were obtained. The method of superposition was used to divide the solution into two parts, the part satisfying the mechanical boundary conditions and continuity conditions was first obtained by solving a system of linear equations; the other part was obtained by the separation of variables method. The present method is suitable for a multilayer piezoelectric infinite hollow cylinder consisting of arbitrary layers and subjected to arbitrary axisymmetric electric excitation. Dynamic responses of stress and electric potential are finally presented and analyzed.展开更多
A bi-harmonic stress function is constructed in this work. Ariy stress function methodology is used to obtain a set of analytical solutions for both ends fixed beams subjected to uniform load. The treatment for fixed-...A bi-harmonic stress function is constructed in this work. Ariy stress function methodology is used to obtain a set of analytical solutions for both ends fixed beams subjected to uniform load. The treatment for fixed-end boundary conditions is the same as that presented by Timoshenko and Goodier (1970). The solutions for propped cantilever beams and cantilever beams are also presented. All of the analytical plane-stress solutions can be obtained for a uniformly loaded isotropic beam with rectangular cross section under different types of classical boundary conditions.展开更多
文摘针对新能源领域对开关变换器具有宽电压增益范围的要求,提出一种多模式变频宽输出LLC变换器。该变换器原边为全桥结构,副边整流器为两级倍压结构,通过控制副边开关管的导通与截止,具有3种不同的电路模式,其增益比为1∶2∶4。各种模式对应不同的输出电压等级,采用变频控制方式,变换器可以实现50~430 V的宽输出电压范围。多种模式切换,使得变换器具有较窄的开关频率范围(65~100 k Hz)。通过合理的参数设计,变换器可以实现原边开关管零电压开通(ZVS)和副边二极管零电流关断(ZCS)。新的电路拓扑结构降低了副边二极管和副边电容的电压应力,仅为输出电压的一半。在理论和仿真分析基础上,制作了1.3 kW的实验样机。实验结果表明,该变换器可以在保证效率的同时实现宽输出电压范围,适合应用于宽输出场合。
文摘A novel Step Oxide-Bypassed （SOB） trench VDMOS structure is designed based on the Oxide-Bypassed concept proposed by Liang Y C. This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance. The main feature of this structure is the various thicknesses of sidewall oxide,which modulate electric field distribution in the drift region and the charge compensation effect. As a result, the breakdown voltage is increased no less than 20% due to the more uniform electric field of the drift region,while the specific on-resistance was reduced by 40%-60% for the step oxide bypassed compared with the oxide-bypassed structure.
文摘A Geiger mode planar InGaAs/InP avalanche photodiode （APD） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10^5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes.
基金Project supported by the National Natural Science Foundation of China (Nos. 10472102 and 10432030) and Postdoctoral Foundation of China (No. 20040350712)
文摘The dynamic responses of a multilayer piezoelectric infinite hollow cylinder under electric potential excitation were obtained. The method of superposition was used to divide the solution into two parts, the part satisfying the mechanical boundary conditions and continuity conditions was first obtained by solving a system of linear equations; the other part was obtained by the separation of variables method. The present method is suitable for a multilayer piezoelectric infinite hollow cylinder consisting of arbitrary layers and subjected to arbitrary axisymmetric electric excitation. Dynamic responses of stress and electric potential are finally presented and analyzed.
基金Project (No. 10472102) supported by the National Natural ScienceFoundation of China
文摘A bi-harmonic stress function is constructed in this work. Ariy stress function methodology is used to obtain a set of analytical solutions for both ends fixed beams subjected to uniform load. The treatment for fixed-end boundary conditions is the same as that presented by Timoshenko and Goodier (1970). The solutions for propped cantilever beams and cantilever beams are also presented. All of the analytical plane-stress solutions can be obtained for a uniformly loaded isotropic beam with rectangular cross section under different types of classical boundary conditions.
