The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping,which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide sy...The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping,which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide systems.Recently,however,the development of freestanding oxide membranes has provided a plausible solution to these substrate limitations.Single-crystalline functional oxide films can be released from their substrates without incurring significant damage and can subsequently be transferred to any substrate of choice.This paper discusses recent advancements in the fabrication,adjustable physical properties,and various applications of freestanding oxide perovskite films.First,we present the primary strategies employed for the synthesis and transfer of these freestanding perovskite thin films.Second,we explore the main functionalities observed in freestanding perovskite oxide thin films,with special attention to the tunable functionalities and physical properties of these freestanding perovskite membranes under varying strain states.Next,we encapsulate three representative devices based on freestanding oxide films.Overall,this review highlights the potential of freestanding oxide films for the study of novel functionalities and flexible electronics.展开更多
Ionic defects, such as oxygen vacancies, play a crucial role in the magnetic and electronic states of transition metal oxides. Control of oxygen vacancy is beneficial to the technological applications, such as catalys...Ionic defects, such as oxygen vacancies, play a crucial role in the magnetic and electronic states of transition metal oxides. Control of oxygen vacancy is beneficial to the technological applications, such as catalysis and energy conversion. Here, we investigate the electronic structure of SrCoO3-x as a function of oxygen content(x). We found that the hybridization extent between Co 3d and O 2p increased with the reduction of oxygen vacancies. The valence band maximum of SrCoO2.5+δ has a typical O 2p characteristic. With further increasing oxygen content, the Co ions transform from a high spin Co3+ to an intermediate spin Co4+, resulting in a transition of SrCoO3-x from insulator to metal. Our results on the electronic structure evolution with the oxygen vacancies in SrCoO3-x not only illustrate a spin state transition of Co ions,but also indicate a perspective application in catalysis and energy field.展开更多
基金supported by the Fundamental Research Funds for the Central Universities(WK9990000102,WK2030000035).
文摘The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping,which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide systems.Recently,however,the development of freestanding oxide membranes has provided a plausible solution to these substrate limitations.Single-crystalline functional oxide films can be released from their substrates without incurring significant damage and can subsequently be transferred to any substrate of choice.This paper discusses recent advancements in the fabrication,adjustable physical properties,and various applications of freestanding oxide perovskite films.First,we present the primary strategies employed for the synthesis and transfer of these freestanding perovskite thin films.Second,we explore the main functionalities observed in freestanding perovskite oxide thin films,with special attention to the tunable functionalities and physical properties of these freestanding perovskite membranes under varying strain states.Next,we encapsulate three representative devices based on freestanding oxide films.Overall,this review highlights the potential of freestanding oxide films for the study of novel functionalities and flexible electronics.
基金supported by the National Key R&D program of China(2016YFA0401002)the National Natural Science Foundation of China(11574365,11474349 and 11375228)
文摘Ionic defects, such as oxygen vacancies, play a crucial role in the magnetic and electronic states of transition metal oxides. Control of oxygen vacancy is beneficial to the technological applications, such as catalysis and energy conversion. Here, we investigate the electronic structure of SrCoO3-x as a function of oxygen content(x). We found that the hybridization extent between Co 3d and O 2p increased with the reduction of oxygen vacancies. The valence band maximum of SrCoO2.5+δ has a typical O 2p characteristic. With further increasing oxygen content, the Co ions transform from a high spin Co3+ to an intermediate spin Co4+, resulting in a transition of SrCoO3-x from insulator to metal. Our results on the electronic structure evolution with the oxygen vacancies in SrCoO3-x not only illustrate a spin state transition of Co ions,but also indicate a perspective application in catalysis and energy field.
