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基于对称分量滤过器的三相电压不平衡度检测 被引量:1
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作者 安健 《电气自动化》 2011年第6期71-73,共3页
随着我国经济的蓬勃发展,电力网负荷急剧加大,特别是冲击、非线性负荷容量的不断增长,使得电网发生电压波形畸变、电压波动、闪变和三相不平衡等电能质量问题。电力系统运行时三相电路经常出现不平衡状态。由于三相严重不平衡会造成巨... 随着我国经济的蓬勃发展,电力网负荷急剧加大,特别是冲击、非线性负荷容量的不断增长,使得电网发生电压波形畸变、电压波动、闪变和三相不平衡等电能质量问题。电力系统运行时三相电路经常出现不平衡状态。由于三相严重不平衡会造成巨大的危害,而正常运行时允许有一定的轻度不平衡,因此对三相电力系统的不平衡度检测十分必要,它是管理者制定相应改善措施的前提与关键。基于对称分量滤过器的三相电压不平衡度检测方法具有较高的实用性和可靠性。 展开更多
关键词 电能质量 负序滤过器 三相电压不平衡 电压互感器 阻容 运放式
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高边智能功率芯片的高精度电流检测电路 被引量:3
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作者 毕立强 蔡小五 +2 位作者 谭守标 赵海涛 方侃飞 《安徽大学学报(自然科学版)》 CAS 北大核心 2020年第6期65-71,共7页
针对常用的高边智能功率芯片,提出一种基于VDMOS(vertical double-diffused MOS)分离元胞技术的高精度电流检测电路.该电路采用高增益、大带宽的折叠式运放,在满足响应速度的同时,增大环路增益以提高电流检测精度.比较电流信号后,输出... 针对常用的高边智能功率芯片,提出一种基于VDMOS(vertical double-diffused MOS)分离元胞技术的高精度电流检测电路.该电路采用高增益、大带宽的折叠式运放,在满足响应速度的同时,增大环路增益以提高电流检测精度.比较电流信号后,输出检测信号的逻辑电平.电流信号的比较输出,降低了电路设计的复杂程度,减少了电压比较器及电阻的运用.电路基于0.25μm BCD(bipolar CMOS DMOS)工艺进行设计.仿真验证结果表明提出的高边智能功率芯片的电流检测电路具有较高的检测精度. 展开更多
关键词 智能功率 电流检测 折叠运放 高精度
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Area-Efficient Low Power CMOS Image Sensor Readout Circuit with Fixed Pattern Noise Cancellation 被引量:2
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作者 赵士彬 姚素英 +1 位作者 聂凯明 徐江涛 《Transactions of Tianjin University》 EI CAS 2010年第5期342-347,共6页
A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correl... A low cost of die area and power consumption CMOS image sensor readout circuit with fixed pattern noise(FPN) cancellation is proposed.By using only one coupling capacitor and switch in the double FPN cancelling correlative double sampling(CDS),pixel FPN is cancelled and column FPN is stored and eliminated by the sampleand-hold operation of digitally programmable gain amplifier(DPGA).The bandwidth balance technology based on operational amplifier(op-amp) sharing is also introduced to decrease the power dissi... 展开更多
关键词 imaging system image sensor low power electronic CAPACITOR operational amplifier fixed pattern noise bandwidth balance technology op-amp sharing
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Impact of TID on response to pulsed X-ray irradiation in the bipolar operational amplifier 被引量:2
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作者 LI Rui Bin WANG Gui Zhen +7 位作者 CHEN Wei MA Qiang LIU Yan LIN Dong Sheng YANG ShanChao BAI XiaoYan QI Chao JIN XiaoMing 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2015年第2期390-396,共7页
Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose (TID). The results showed that the TID caused power consumption current and ... Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose (TID). The results showed that the TID caused power consumption current and slew rate (SR) to degenerate in ultra-linearity, owing to a severe reduction in the current gain of the internal LPNP transistors. Pulsed X-ray irradiation experiments were carried out on the μA741 groups with different values, and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID. The mechanism for this is explained on the basis of the circuit construction of the μA741; the sensitive parameters of the circuit were obtained via simulation on SP1CE. The simulation results additionally showed that if the sensitive parameters were optimized, the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly. In addition, several proposals are provided for hardening the devices. 展开更多
关键词 TID pulsed X-ray irradiation operational amplifier simulation
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