This paper presents a 10-bit 20 MS/s pipelined Analog-to- Digital Converter（ADC） using op amp sharing approach and removing Sample and Hold Amplifier（SHA） or SHA-less technique to reach the goal of low-power const...This paper presents a 10-bit 20 MS/s pipelined Analog-to- Digital Converter（ADC） using op amp sharing approach and removing Sample and Hold Amplifier（SHA） or SHA-less technique to reach the goal of low-power constanpfion. This design was fabricated in TSMC 0.18 wn 1P6M technology. Measurement results show at supply voltage of 1.8 V, a SFDR of 42.46 dB, a SNDR of 39.45 dB, an ENOB of 6.26, and a THDof41.82 dB are at 1 MHz sinusoidal sig- nal input. In addition, the DNL and INL are 1.4 LSB and 3.23 LSB respectively. The power onstmaption is 28.8 mW. The core area is 0.595 mm2 and the chip area including pads is 1.468 mm2.展开更多
Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose （TID）. The results showed that the TID caused power consumption current and ...Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose （TID）. The results showed that the TID caused power consumption current and slew rate （SR） to degenerate in ultra-linearity, owing to a severe reduction in the current gain of the internal LPNP transistors. Pulsed X-ray irradiation experiments were carried out on the μA741 groups with different values, and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID. The mechanism for this is explained on the basis of the circuit construction of the μA741; the sensitive parameters of the circuit were obtained via simulation on SP1CE. The simulation results additionally showed that if the sensitive parameters were optimized, the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly. In addition, several proposals are provided for hardening the devices.展开更多
基金provided by National Chip Implementation Center(CIC)
文摘This paper presents a 10-bit 20 MS/s pipelined Analog-to- Digital Converter（ADC） using op amp sharing approach and removing Sample and Hold Amplifier（SHA） or SHA-less technique to reach the goal of low-power constanpfion. This design was fabricated in TSMC 0.18 wn 1P6M technology. Measurement results show at supply voltage of 1.8 V, a SFDR of 42.46 dB, a SNDR of 39.45 dB, an ENOB of 6.26, and a THDof41.82 dB are at 1 MHz sinusoidal sig- nal input. In addition, the DNL and INL are 1.4 LSB and 3.23 LSB respectively. The power onstmaption is 28.8 mW. The core area is 0.595 mm2 and the chip area including pads is 1.468 mm2.
基金supported by the State Key Laboratory Foundation(Grant No.SKLIPR1212)
文摘Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose （TID）. The results showed that the TID caused power consumption current and slew rate （SR） to degenerate in ultra-linearity, owing to a severe reduction in the current gain of the internal LPNP transistors. Pulsed X-ray irradiation experiments were carried out on the μA741 groups with different values, and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID. The mechanism for this is explained on the basis of the circuit construction of the μA741; the sensitive parameters of the circuit were obtained via simulation on SP1CE. The simulation results additionally showed that if the sensitive parameters were optimized, the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly. In addition, several proposals are provided for hardening the devices.
