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商用车前照灯近光照明效果改进
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作者 朱炳耀 《汽车与新动力》 2022年第5期58-60,共3页
商用车投射式前照灯因其体积小、投射距离长、光型好而备受人们的重视。为了提高商用车投射式前照灯的使用效果,分析了投射式前照灯的工作原理及优势,针对投射式前照灯截止线处的色差及亮度梯度过大等问题,提出了一种基于投射镜头的投... 商用车投射式前照灯因其体积小、投射距离长、光型好而备受人们的重视。为了提高商用车投射式前照灯的使用效果,分析了投射式前照灯的工作原理及优势,针对投射式前照灯截止线处的色差及亮度梯度过大等问题,提出了一种基于投射镜头的投射透镜结构。为了解决近光截止线处的亮度梯度大的问题,采用了一种具有微结构的非球面透镜,使截止线处的亮度变小,从而达到欧洲经济委员会(ECE)标准要求。发光二极管(LED)光源用于前照灯具有低能耗、长寿命、快速响应等优势,为此,针对LED光源代替传统光源情况,对前照灯反射器、挡板、透镜等进行了改进,实现了LED照明系统的设计与加工。 展开更多
关键词 商用车 前照灯 近光照明
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A Systematic Study of the Forbidden Pitch in the CD Through-Pitch Curve for Beyond 130nm
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作者 赵宇航 朱骏 曹永峰 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期889-892,共4页
The forbidden pitch "dip" in the critical dimension (CD) through the pitch curve is a well-known optical proximity effect. The CD and CD process window near the "dip",usually found near a pitch range of 1.1 to 1... The forbidden pitch "dip" in the critical dimension (CD) through the pitch curve is a well-known optical proximity effect. The CD and CD process window near the "dip",usually found near a pitch range of 1.1 to 1.4 wavelength/ NA (numerical aperture),is smaller when compared with other pitches. This is caused by inadequate imaging contrast for an unequal line and space grating. Although this effect is relatively well-known, its relationship with typical process condition parameters,such as the effective image blur caused by the photo-acid diffusion during the post exposure bake or the aberration in the imaging lens, has not been systematically studied. In this paper, we will examine the correlation between the image blur and the effect on the CD, including the decrease in the CD value (the depth of the "dip") and the CD process window. We find that both the decrease in the CD value and the focus latitude near the forbidden pitch correlate very well with the effective Gaussian image blur. Longer effective diffusion length correlates well with a smaller process window and a deeper CD "dip". We conclude that the dip depth is very sensitive to the change in image contrast. 展开更多
关键词 forbidden pitch effective resist diffusion length OPC OAI deep-UV
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