In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaA...In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.展开更多
Multifunctional devices are of great interest for integration and miniaturization on the same platform, but simple addition of functionalities would lead to excessively large devices. Here, the photodetection and chem...Multifunctional devices are of great interest for integration and miniaturization on the same platform, but simple addition of functionalities would lead to excessively large devices. Here, the photodetection and chemical sensing device is developed based on two-dimensional(2D) glassygraphene that meets similar property requirements for the two functionalities. An appropriate bandgap arising from the distorted lattice structure enables glassy graphene to exhibit comparable or even improved photodetection and chemical sensing capability, compared with pristine graphene. Due to strong interactions between glassy graphene and the ambient atmosphere, the devices are less sensitive to photoinduced desorption than the ones based on graphene. Consequently,the few-layer glassy graphene device delivers positive photoresponse, with a responsivity of 0.22 A W^(-1) and specific detectivity reaching ~10^(10) Jones under 405 nm illumination.Moreover, the intrinsic defects and strain in glassy graphene can enhance the adsorption of analytes, leading to high chemical sensing performance. Specifically, the extracted signalto-noise-ratio of the glassy graphene device for detecting acetone is 48, representing more than 50% improvement over the device based on graphene. Additionally, bias-voltage-and thickness-dependent volatile organic compound(VOC) sensing features are identified, indicating the few-layer glassy graphene is more sensitive. This study successfully demonstrates the potential of glassy graphene for integrated photodetection and chemical sensing, providing a promising solution for multifunctional applications further beyond.展开更多
基金supported by the National Natural Science Foundation of China(No.61575059,No.61675062,No.21501038)the Fundamental Research Funds for the Central Universities(No.JZ2018HGPB0275,No.JZ2018HGTA0220,and No.JZ2018HGXC0001).
文摘In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.
基金supported by the National Natural Science Foundation of China (61974014)the EPSRC Future Compound Semiconductor Manufacturing Hub (EP/P006973/1)。
文摘Multifunctional devices are of great interest for integration and miniaturization on the same platform, but simple addition of functionalities would lead to excessively large devices. Here, the photodetection and chemical sensing device is developed based on two-dimensional(2D) glassygraphene that meets similar property requirements for the two functionalities. An appropriate bandgap arising from the distorted lattice structure enables glassy graphene to exhibit comparable or even improved photodetection and chemical sensing capability, compared with pristine graphene. Due to strong interactions between glassy graphene and the ambient atmosphere, the devices are less sensitive to photoinduced desorption than the ones based on graphene. Consequently,the few-layer glassy graphene device delivers positive photoresponse, with a responsivity of 0.22 A W^(-1) and specific detectivity reaching ~10^(10) Jones under 405 nm illumination.Moreover, the intrinsic defects and strain in glassy graphene can enhance the adsorption of analytes, leading to high chemical sensing performance. Specifically, the extracted signalto-noise-ratio of the glassy graphene device for detecting acetone is 48, representing more than 50% improvement over the device based on graphene. Additionally, bias-voltage-and thickness-dependent volatile organic compound(VOC) sensing features are identified, indicating the few-layer glassy graphene is more sensitive. This study successfully demonstrates the potential of glassy graphene for integrated photodetection and chemical sensing, providing a promising solution for multifunctional applications further beyond.
