扩硼硅pn结二极管室温近红外电致发光性能

采用扩散法制备了两种掺杂浓度的硅pn结二极管,对它们的室温近红外电致发光性能进行了研究。结果表明,轻掺硅pn结二极管室温电致发光谱中只有带边峰(1.1eV),而重掺硅pn结二极管在较大的注入电流下,除带边峰外还有0.78eV发光峰,该发光峰的强度随注入电流增加呈指数增长。在低温光致发光谱中没有出现与缺陷相关的发光峰,在高分辨截面透射电镜照片中也没有发现位错或位错环等缺陷。0.78eV发光峰可能是由于大量硼扩散进入硅晶格内产生的应力造成带隙变化,注入的载流子在此处进行辐射复合产生的。

Near Infrared Electroluminescence of Er-doped ZnS Thin Film Devices

Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two boats, are reported. The study of the film microstructure has been carried out using X-ray diffraction. The effects of the Er-doped film microstructure on luminescence are pointed out.