The main challenge in AI governance today is striking a balance between controlling AI dangers and fostering AI innovation.Regulators in a number of nations have progressively extended the regulatory sandbox,which was...The main challenge in AI governance today is striking a balance between controlling AI dangers and fostering AI innovation.Regulators in a number of nations have progressively extended the regulatory sandbox,which was first implemented in the banking sector,to AI governance in an effort to reduce the conflict between regulation and innovation.The AI regulatory sandbox is a new and feasible route for AI governance in China that not only helps to manage the risks of technology application but also prevents inhibiting AI innovation.It keeps inventors'trial-and-error tolerance space inside the regulatory purview while offering a controlled setting for the development and testing of novel AI that hasn't yet been put on the market.By providing full-cycle governance of AI with the principles of agility and inclusive prudence,the regulatory sandbox offers an alternative to the conventional top-down hard regulation,expost regulation,and tight regulation.However,the current system also has inherent limitations and practical obstacles that need to be overcome by a more rational and effective approach.To achieve its positive impact on AI governance,the AI regulatory sandbox system should build and improve the access and exit mechanism,the coordination mechanism between the sandbox and personal information protection,and the mechanisms of exemption,disclosure,and communication.展开更多
The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using...The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using the Monte Carlo simulator TRIM.Lateral Schottky barrier diodes and transfer length method (TLM) measurement structure are made on nitrogen implanted layers for the testing.The concentration of activated donors N d is about 3 0×10 16 cm -3 .The resulting value for the activation rate in this study is 2 percent.The sheet resistance R sh is 30kΩ/□ and the resistivity ρ(R sh × d ) of the implanted layer is 0 72Ω·cm.The electron mobility calculated is about 300cm 2/(V·s) in the N implanted layer.展开更多
The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investiga...The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simulator.展开更多
Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA).The structure of synthetic ...Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA).The structure of synthetic silicides has been investigated with the analysis of channeled low angle emergence and TEM.Three layers could be observed in the implanted region as the implanting ion flux is selected as 25μA/cm\+2.The thickness of the silicide layer is about 60—80nm.The defect density N \-d and sheet resistance R \-s decrease with the increase of the ion flux.After RTA annealing of the implanted sample,the N\-d and R\-s decreased obviously.R\-s decreased from 54Ω/□ to 14Ω/□.The minimum of resistivity is 84μΩ·cm.It is evident that electrical properties of the Y silicides can be improved by RTA.The formation of the silicides with YSi and YSi\-2 are confirmed by X\|ray diffraction (XRD) analysis.With the analysis of low angle emergence,important information exposed from the depth profiles of atoms and lattice distortion in an implanted region would be used to study the synthesis of silicides.展开更多
Blue luminescence at about 431nm is obtained from epitaxial silicon after C+ implantation,annealing in hydrogen ambience and chemical etching sequentially.With increase of chemical etching,the blue peak is enhanced at...Blue luminescence at about 431nm is obtained from epitaxial silicon after C+ implantation,annealing in hydrogen ambience and chemical etching sequentially.With increase of chemical etching,the blue peak is enhanced at first,then decreased and substituted by a red peak at last.C=O compounds are introduced during C+ implantation and embedded in the surface of nanometer Si formed during annealing,and at last is formed nanometer silicon with embedded structure,which contributes to the blue emission.Presented is the possible mechanism of photoluminescence.展开更多
This paper reports that dense and crack-free （100） oriented lead zirconate titanate （Pb（ Zr0. 52Ti0. 48 ）O3, PZT） thick film embedded with PZT nanopartieles has been successfully fabricated on Pt/Cr/SiO2/Si subs...This paper reports that dense and crack-free （100） oriented lead zirconate titanate （Pb（ Zr0. 52Ti0. 48 ）O3, PZT） thick film embedded with PZT nanopartieles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive. The thick film possesses single-phase perovskite structure and perfectly （100） oriented. The （100） orientation degree of the PZT films strongly depended on annealing time and for the 4μm-thick PZT film which was annealed at 700℃ for 5 min is the largest. The （100） orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing. The 3μm-thick PZT thick film which was annealed at 700℃ for 5 rain has the strongest （100） orientation degree, which is 82. 3%.展开更多
Blue luminescence at about 431 nm is obtained from epitaxial silicon after C^+ implantation,annealing in hydrogen ambience and chemical etching sequentially.When annealed in nitrogen ambience and etched accordingly,th...Blue luminescence at about 431 nm is obtained from epitaxial silicon after C^+ implantation,annealing in hydrogen ambience and chemical etching sequentially.When annealed in nitrogen ambience and etched accordingly,there is a much narrower peak at about 430 nm.During C^+ implantation,C=O compounds are introduced into and embedded in the surface of nanometer Si formed during annealing,at last,nanometer silicon with embedded structure is formed,which contributes to the blue emission.展开更多
The methods for protecting InP surface against degradation during annealing,including encapsulant and encapsulant-free techniques;rapid thermal annealing of InP implanted layers;implanted ion species and some profiles...The methods for protecting InP surface against degradation during annealing,including encapsulant and encapsulant-free techniques;rapid thermal annealing of InP implanted layers;implanted ion species and some profiles of typical dopants,etc.,they are all the key techniques concerning ion implantation into semi-insulating InP,and have been reviewed synthetically as well.展开更多
Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 ...Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at 750 ℃～850 ℃ for 10 s or at 700 ℃ for 40 s,the implantation induced damage can be removed,the carrier mobility was about 300 cm 2/V·s and the activity was nearly 100%.展开更多
Al-5Ti-1B master alloy was added into Mg-14Li-1Al(LA141)alloy and then LA141 sheets were prepared by extrusion and cold rolling.The effect of the addition level of Al-5Ti-1B master alloy on the grain size of LA141 all...Al-5Ti-1B master alloy was added into Mg-14Li-1Al(LA141)alloy and then LA141 sheets were prepared by extrusion and cold rolling.The effect of the addition level of Al-5Ti-1B master alloy on the grain size of LA141 alloy was investigated as well as the effects of the total reduction of cold rolling and the annealing temperature on microstructure,mechanical properties and plastic formability of the LA141 sheets.The results show that the optimal addition level of Al-5Ti-1B master alloy into LA141 alloy is 1.25%(mass fraction)and LA141 alloy has the finest grains.With the increase of the total reduction of cold rolling,the grains of the as-rolled LA141 sheets were flattened gradually.A proper anneal temperature of 200℃ is obtained for the cold rolled LA141 sheets. Under this condition,microstructure of the LA141 sheets consists of fine and uniform equiaxed grains and has higher Erichsen cupping index(IE).展开更多
文摘The main challenge in AI governance today is striking a balance between controlling AI dangers and fostering AI innovation.Regulators in a number of nations have progressively extended the regulatory sandbox,which was first implemented in the banking sector,to AI governance in an effort to reduce the conflict between regulation and innovation.The AI regulatory sandbox is a new and feasible route for AI governance in China that not only helps to manage the risks of technology application but also prevents inhibiting AI innovation.It keeps inventors'trial-and-error tolerance space inside the regulatory purview while offering a controlled setting for the development and testing of novel AI that hasn't yet been put on the market.By providing full-cycle governance of AI with the principles of agility and inclusive prudence,the regulatory sandbox offers an alternative to the conventional top-down hard regulation,expost regulation,and tight regulation.However,the current system also has inherent limitations and practical obstacles that need to be overcome by a more rational and effective approach.To achieve its positive impact on AI governance,the AI regulatory sandbox system should build and improve the access and exit mechanism,the coordination mechanism between the sandbox and personal information protection,and the mechanisms of exemption,disclosure,and communication.
文摘The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using the Monte Carlo simulator TRIM.Lateral Schottky barrier diodes and transfer length method (TLM) measurement structure are made on nitrogen implanted layers for the testing.The concentration of activated donors N d is about 3 0×10 16 cm -3 .The resulting value for the activation rate in this study is 2 percent.The sheet resistance R sh is 30kΩ/□ and the resistivity ρ(R sh × d ) of the implanted layer is 0 72Ω·cm.The electron mobility calculated is about 300cm 2/(V·s) in the N implanted layer.
文摘The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simulator.
基金Project Supported by National Natural Science Foundation of China ( Grant No.59671 0 51 ) and by National HighTechnology Resea
文摘Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA).The structure of synthetic silicides has been investigated with the analysis of channeled low angle emergence and TEM.Three layers could be observed in the implanted region as the implanting ion flux is selected as 25μA/cm\+2.The thickness of the silicide layer is about 60—80nm.The defect density N \-d and sheet resistance R \-s decrease with the increase of the ion flux.After RTA annealing of the implanted sample,the N\-d and R\-s decreased obviously.R\-s decreased from 54Ω/□ to 14Ω/□.The minimum of resistivity is 84μΩ·cm.It is evident that electrical properties of the Y silicides can be improved by RTA.The formation of the silicides with YSi and YSi\-2 are confirmed by X\|ray diffraction (XRD) analysis.With the analysis of low angle emergence,important information exposed from the depth profiles of atoms and lattice distortion in an implanted region would be used to study the synthesis of silicides.
文摘Blue luminescence at about 431nm is obtained from epitaxial silicon after C+ implantation,annealing in hydrogen ambience and chemical etching sequentially.With increase of chemical etching,the blue peak is enhanced at first,then decreased and substituted by a red peak at last.C=O compounds are introduced during C+ implantation and embedded in the surface of nanometer Si formed during annealing,and at last is formed nanometer silicon with embedded structure,which contributes to the blue emission.Presented is the possible mechanism of photoluminescence.
基金Sponsored by 863 Scientific Project of China (Grant No.2007AA03Z103)the National Natural Science Foundation of China (Grant No.50742007)the Key Laboratory Foundation of Sonar Technology of China(Grant No. 9140C24KF0901)
文摘This paper reports that dense and crack-free （100） oriented lead zirconate titanate （Pb（ Zr0. 52Ti0. 48 ）O3, PZT） thick film embedded with PZT nanopartieles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive. The thick film possesses single-phase perovskite structure and perfectly （100） oriented. The （100） orientation degree of the PZT films strongly depended on annealing time and for the 4μm-thick PZT film which was annealed at 700℃ for 5 min is the largest. The （100） orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing. The 3μm-thick PZT thick film which was annealed at 700℃ for 5 rain has the strongest （100） orientation degree, which is 82. 3%.
文摘Blue luminescence at about 431 nm is obtained from epitaxial silicon after C^+ implantation,annealing in hydrogen ambience and chemical etching sequentially.When annealed in nitrogen ambience and etched accordingly,there is a much narrower peak at about 430 nm.During C^+ implantation,C=O compounds are introduced into and embedded in the surface of nanometer Si formed during annealing,at last,nanometer silicon with embedded structure is formed,which contributes to the blue emission.
文摘The methods for protecting InP surface against degradation during annealing,including encapsulant and encapsulant-free techniques;rapid thermal annealing of InP implanted layers;implanted ion species and some profiles of typical dopants,etc.,they are all the key techniques concerning ion implantation into semi-insulating InP,and have been reviewed synthetically as well.
文摘Si 0.8 Ge 0.2 strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition (RTP/VLP-CVD) and implanted with boron at 40 keV,a dosage of 2.5×10 14 cm -2 .Rapid thermal annealing (RTA) and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at 750 ℃～850 ℃ for 10 s or at 700 ℃ for 40 s,the implantation induced damage can be removed,the carrier mobility was about 300 cm 2/V·s and the activity was nearly 100%.
基金Project(50604020)supported by the National Natural Science Foundation of ChinaProject(2007CB613706)supported by the National Basic Research Program of ChinaProject(2009AA03Z507)supported by the National High-tech Research and Development Program of China
文摘Al-5Ti-1B master alloy was added into Mg-14Li-1Al(LA141)alloy and then LA141 sheets were prepared by extrusion and cold rolling.The effect of the addition level of Al-5Ti-1B master alloy on the grain size of LA141 alloy was investigated as well as the effects of the total reduction of cold rolling and the annealing temperature on microstructure,mechanical properties and plastic formability of the LA141 sheets.The results show that the optimal addition level of Al-5Ti-1B master alloy into LA141 alloy is 1.25%(mass fraction)and LA141 alloy has the finest grains.With the increase of the total reduction of cold rolling,the grains of the as-rolled LA141 sheets were flattened gradually.A proper anneal temperature of 200℃ is obtained for the cold rolled LA141 sheets. Under this condition,microstructure of the LA141 sheets consists of fine and uniform equiaxed grains and has higher Erichsen cupping index(IE).
