The effect of HALO dose on device parameter degradation of pMOSFET with 2.1nm o xide and 0.135μm channel length at hot carrier stress is analyzed.It is found that the degradation mechanism is not sensitive to HALO d...The effect of HALO dose on device parameter degradation of pMOSFET with 2.1nm o xide and 0.135μm channel length at hot carrier stress is analyzed.It is found that the degradation mechanism is not sensitive to HALO dose changing,but the d egradation quantities of linear drain current,saturation drain current,and maxim um transconductance increase with HALO dose enhancing and are larger than those of speculated before.The degradation of device parameters (linear drain current, saturation drain current,and maximum transconductance) is attributed to not onl y the drain series resistance enhancing induced by interface states under spacer oxide and carrier mobility degradation but also the threshold voltage variation and initial threshold voltage increasing with HALO dose enhancing.展开更多
文摘The effect of HALO dose on device parameter degradation of pMOSFET with 2.1nm o xide and 0.135μm channel length at hot carrier stress is analyzed.It is found that the degradation mechanism is not sensitive to HALO dose changing,but the d egradation quantities of linear drain current,saturation drain current,and maxim um transconductance increase with HALO dose enhancing and are larger than those of speculated before.The degradation of device parameters (linear drain current, saturation drain current,and maximum transconductance) is attributed to not onl y the drain series resistance enhancing induced by interface states under spacer oxide and carrier mobility degradation but also the threshold voltage variation and initial threshold voltage increasing with HALO dose enhancing.
