基于分子束外延技术可控制备Ga原子团簇的研究

本研究基于分子束外延(Molecular Beam Epitaxy,MBE)技术在Si(100)衬底表面成功制备金属Ga原子团簇.通过控制变量法,研究其尺寸形貌与工艺参数之间的关系.第一组对照实验分别在940℃、970℃、1000℃的Ga源温度下制备Ga原子团簇.实验结果表明,Ga源温度的升高导致Ga的蒸发量增加,进而沉积在Si衬底表面的Ga原子增多,Ga原子自组装成团簇,最终表现为Ga原子团簇的高度升高.第二组对照实验分别在3 s、6 s、10 s、40 s、50 s、60 s的沉积时长下制备Ga原子团簇.实验结果表明,沉积时长增加导致团簇的高度逐渐增加,主要由新吸附原子和竞争效应驱动.第三组对照实验分别在0 s、60 s、300 s的退火时长下制备Ga原子团簇.实验结果表明,退火时长的增加导致团簇的高度下降和团簇内的原子重新排列和分布有关.第四组对照实验分别在420℃、500℃的退火温度下制备Ga原子团簇.实验结果表明,升温至500℃退火会促进Ga原子团簇呈现有序排列,是表面原子的热运动和Ga原子团簇与Si(100)的晶格匹配度的共同作用的结果.

离子液体掺杂左旋聚乳酸薄膜的制备及压电性能研究

聚L-乳酸(PLLA)不仅具有透明、柔软、绿色来源、可再生、可生物降解以及生物兼容等特点,还具有一定的剪切压电性能,是运动测量、健康监测、人机交互等领域的热点材料。然而左旋聚乳酸的压电性能较聚偏四氟乙烯(PVDF)弱。为进一步提升左旋聚乳酸薄膜的压电性能,通过少量掺杂(1-丁基-3-甲基咪唑双三氟甲磺酰亚胺盐)离子液体(IL)和后处理工艺制备了一种压电性能增强的左旋聚乳酸薄膜。采用X射线衍射、拉曼光谱、力学测试仪等设备详细研究了掺杂不同质量比IL(0%、0.25%、1%、4%)的PLLA薄膜在不同退火工艺下的结晶性能和压电特性。结果表明,PLLA薄膜的压电性能随着离子液体浓度的增加和退火时间的增加而增加;4%IL掺杂且退火2 h的PLLA/IL复合薄膜的电压响应信号达到0.64 V,是纯PLLA薄膜对照组电压响应峰值信号的2倍。因此,通过往PLLA薄膜合理掺杂IL和适当退火处理能够获得高压电性能的左旋聚乳酸薄膜。

Oriented Growth of PZT thick film embedded with PZT nanoparticles

This paper reports that dense and crack-free （100） oriented lead zirconate titanate （Pb（ Zr0. 52Ti0. 48 ）O3, PZT） thick film embedded with PZT nanopartieles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive. The thick film possesses single-phase perovskite structure and perfectly （100） oriented. The （100） orientation degree of the PZT films strongly depended on annealing time and for the 4μm-thick PZT film which was annealed at 700℃ for 5 min is the largest. The （100） orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing. The 3μm-thick PZT thick film which was annealed at 700℃ for 5 rain has the strongest （100） orientation degree, which is 82. 3%.

Evolutions of texture and grain boundary plane distributions in a ferritic stainless steel

The grain size, textures and grain boundary plane distributions in a cold-rolled and annealed ferritic stainless steel were investigated by means of EBSD techniques. The results show that, following cold rolling with the thickness reduction of 85%, relatively low temperature （780℃） annealing brings an extremely sluggish grain growth and no grain texture develops when the annealing time varies from 5 min to 480 min. The free energy reduction of the system is mainly caused by the grain boundary plane re-orientation in addition to minor grain growth because the distributions of grain boundary planes are moderately preferred on { 100} according to the five parameter analyses （FPA） concerning the grain boundary plane characteristics. However, in the case of high-temperature （1 000 ℃） annealing, the average grain size does not increase until annealing time is prolonged to 90 min, after which extensive grain growth occurs and strong {100}（hkl） texture emerges whereas nearly random grain boundary plane distributions are observed. The free energy reduction of the system is most likely attributed to the selective growth.