本文通过前线轨道理论和ab initio HF 计算方法,对不同种类的氢与不同BN/C相之间的反应性进行了比较。结果表明原子氢与sp2-C相的反应性高过其与sp3-C相的反应性,从而说明在CVD技术中原子氢有对C相的选择腐蚀性;在氢与BN相的反应中,原...本文通过前线轨道理论和ab initio HF 计算方法,对不同种类的氢与不同BN/C相之间的反应性进行了比较。结果表明原子氢与sp2-C相的反应性高过其与sp3-C相的反应性,从而说明在CVD技术中原子氢有对C相的选择腐蚀性;在氢与BN相的反应中,原子氢没有类似的选择腐蚀性;相对于中性氢而言离子氢具有较高的反应性。展开更多
A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs). High etc...A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs). High etching-selectivity ratio of InGaAs to InA1As material larger than 100 is achieved by using mixture solution of succinic acid and hydrogen peroxide (H202). Selective wet-etching is validated in the gate-recess process of InA1As/InGaAs InP-based HEMTs, which proceeds and auto- matically stops at the InA1As barrier layer. The non-selective digital wet-etching process is developed using a separately controlled oxidation/de-oxidation technique, and during each digital etching cycle 1.2 nm InAIAs material is removed. The two-step gate-recess etching technique has been successfully incorporated into device fabrication. Digital wet-etching is repeated for two cycles with about 3 nm InAIAs barrier layer being etched off. InP-based HEMTs have demonstrated superior extrinsic trans- conductance and RF characteristics to devices fabricated during only the selective gate-recess etching process because of the smaller gate to channel distance.展开更多
Metallic glasses(MGs)have attracted great attention in wastewater treatment because of their high reactivity arising from amorphous structure,large residual stress and high density of low coordination sites.However,th...Metallic glasses(MGs)have attracted great attention in wastewater treatment because of their high reactivity arising from amorphous structure,large residual stress and high density of low coordination sites.However,the reactivity of MGs would gradually slow down with time due to the passivation of active sites by corrosion products,resulting in limited long-term reactivity,which is also an unsolved key issue for established crystalline zero valent iron(ZVI)technology.Here,such problems are successfully overcome by introducing nanoscale chemical inhomogeneities in Fe-based MG(Fe-MGI),which apparently contributes to local galvanic cell effect and accelerates electron transfer during degradation process.More importantly,the selective depletion of Fe0 causes local volume shrinkage and crack formation,leading to self-peeling of precipitated corrosion products and reacted regions.Thereby fresh low coordination sites could be continuously provided,counteracting the mass transport and reactivity deteriorating problem.Consequently,Fe-MGI demonstrates excellent long-term reactivity and self-refreshing properties even in neutral solution.The present results provide not only a new candidate but also a new route of designing ZVI materials for wastewater treatment.展开更多
文摘本文通过前线轨道理论和ab initio HF 计算方法,对不同种类的氢与不同BN/C相之间的反应性进行了比较。结果表明原子氢与sp2-C相的反应性高过其与sp3-C相的反应性,从而说明在CVD技术中原子氢有对C相的选择腐蚀性;在氢与BN相的反应中,原子氢没有类似的选择腐蚀性;相对于中性氢而言离子氢具有较高的反应性。
基金Project supported by the National Natural Science Foundation of China (Nos. 61404115 and 61434006), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (No. 18IRTSTHN016), and the Development Fund for Outstanding Young Teachers in Zhengzhou University, China (No. 1521317004)
文摘A two-step gate-recess process combining high selective wet-etching and non-selective digital wet-etching techniques has been proposed for InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs). High etching-selectivity ratio of InGaAs to InA1As material larger than 100 is achieved by using mixture solution of succinic acid and hydrogen peroxide (H202). Selective wet-etching is validated in the gate-recess process of InA1As/InGaAs InP-based HEMTs, which proceeds and auto- matically stops at the InA1As barrier layer. The non-selective digital wet-etching process is developed using a separately controlled oxidation/de-oxidation technique, and during each digital etching cycle 1.2 nm InAIAs material is removed. The two-step gate-recess etching technique has been successfully incorporated into device fabrication. Digital wet-etching is repeated for two cycles with about 3 nm InAIAs barrier layer being etched off. InP-based HEMTs have demonstrated superior extrinsic trans- conductance and RF characteristics to devices fabricated during only the selective gate-recess etching process because of the smaller gate to channel distance.
基金financially supported by the National Natural Science Foundation of China (NSFC, 51871129 and 51571127)the National Key Basic Research and Development Programme (2016YFB0300502)the Natural Science Foundation of Jiangsu Province (BK20190480)
文摘Metallic glasses(MGs)have attracted great attention in wastewater treatment because of their high reactivity arising from amorphous structure,large residual stress and high density of low coordination sites.However,the reactivity of MGs would gradually slow down with time due to the passivation of active sites by corrosion products,resulting in limited long-term reactivity,which is also an unsolved key issue for established crystalline zero valent iron(ZVI)technology.Here,such problems are successfully overcome by introducing nanoscale chemical inhomogeneities in Fe-based MG(Fe-MGI),which apparently contributes to local galvanic cell effect and accelerates electron transfer during degradation process.More importantly,the selective depletion of Fe0 causes local volume shrinkage and crack formation,leading to self-peeling of precipitated corrosion products and reacted regions.Thereby fresh low coordination sites could be continuously provided,counteracting the mass transport and reactivity deteriorating problem.Consequently,Fe-MGI demonstrates excellent long-term reactivity and self-refreshing properties even in neutral solution.The present results provide not only a new candidate but also a new route of designing ZVI materials for wastewater treatment.