本文介绍了倒易点及其倒易点二维图的概念、倒易点形状及其倒易点二维图同晶格形变的关系 ,推导了热应力作用下双层膜发生弯曲的理论公式 ,阐明了晶格弯曲的原因和晶格倒易点二维图展宽的方向 ,分析了 Ga As光电阴极 Al Ga As/ Ga As外...本文介绍了倒易点及其倒易点二维图的概念、倒易点形状及其倒易点二维图同晶格形变的关系 ,推导了热应力作用下双层膜发生弯曲的理论公式 ,阐明了晶格弯曲的原因和晶格倒易点二维图展宽的方向 ,分析了 Ga As光电阴极 Al Ga As/ Ga As外延层的实测倒易点二维图 ,最后提出了降低 Al Ga As/ Ga展开更多
By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we ...By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we obtain an equation to calculate the emitted electron energy distribution of transmission-mode NEA GaAs photocathodes. Accord- ing to the equation,we study the effect of cathode surface potential barrier on the electron energy distribution and find a significant effect of the barrier-Ⅰ thickness or end height,especially the thickness,on the quantum efficiency of the cath- ode. Barrier Ⅱ has an effect on the electron energy spread, and an increase in the vacuum level will lead to a narrower electron energy spread while sacrificing a certain amount of cathode quantum efficiency. The equation is also used to fit the measured electron energy distribution curve of the transmission-mode cathode and the parameters of the surface barri- er are obtained from the fitting. The theoretical curve is in good agreement with the experimental curve.展开更多
O462.3 2001021264碲铯紫外光电阴极的工艺研究=Study of processingart of Te-Cs ultraviolet cathodes[刊,中]/钟生东,张学恒,闫吉庆,张忠廉(北京理工大学光电工程系.北京(100081))//光学技术.—2000,26(4).-318-320较详细的介绍了反...O462.3 2001021264碲铯紫外光电阴极的工艺研究=Study of processingart of Te-Cs ultraviolet cathodes[刊,中]/钟生东,张学恒,闫吉庆,张忠廉(北京理工大学光电工程系.北京(100081))//光学技术.—2000,26(4).-318-320较详细的介绍了反射式和透射式紫外光电阴极的制作过程,用表格列出了碲铯光阴极的主要特性,对远紫外和紫外石英玻璃进行了分类。图4参6(李瑞琴)展开更多
文摘本文介绍了倒易点及其倒易点二维图的概念、倒易点形状及其倒易点二维图同晶格形变的关系 ,推导了热应力作用下双层膜发生弯曲的理论公式 ,阐明了晶格弯曲的原因和晶格倒易点二维图展宽的方向 ,分析了 Ga As光电阴极 Al Ga As/ Ga As外延层的实测倒易点二维图 ,最后提出了降低 Al Ga As/ Ga
文摘By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we obtain an equation to calculate the emitted electron energy distribution of transmission-mode NEA GaAs photocathodes. Accord- ing to the equation,we study the effect of cathode surface potential barrier on the electron energy distribution and find a significant effect of the barrier-Ⅰ thickness or end height,especially the thickness,on the quantum efficiency of the cath- ode. Barrier Ⅱ has an effect on the electron energy spread, and an increase in the vacuum level will lead to a narrower electron energy spread while sacrificing a certain amount of cathode quantum efficiency. The equation is also used to fit the measured electron energy distribution curve of the transmission-mode cathode and the parameters of the surface barri- er are obtained from the fitting. The theoretical curve is in good agreement with the experimental curve.
文摘O462.3 2001021264碲铯紫外光电阴极的工艺研究=Study of processingart of Te-Cs ultraviolet cathodes[刊,中]/钟生东,张学恒,闫吉庆,张忠廉(北京理工大学光电工程系.北京(100081))//光学技术.—2000,26(4).-318-320较详细的介绍了反射式和透射式紫外光电阴极的制作过程,用表格列出了碲铯光阴极的主要特性,对远紫外和紫外石英玻璃进行了分类。图4参6(李瑞琴)
