Harvesting solar energy to produce clean hydrogen from photoelectrolysis of water presents a valuable opportunity to find alternatives for fossil fuels. Three- dimensional nanoarchitecturing techniques can afford enha...Harvesting solar energy to produce clean hydrogen from photoelectrolysis of water presents a valuable opportunity to find alternatives for fossil fuels. Three- dimensional nanoarchitecturing techniques can afford enhanced photoelectrochemical properties by improving geometrical and structural effects. Here, we report quantum-dot sensitized TiO2-Sb：SnO2 heterostructures as a model electrode to enable the optimization of the structural effects through the creation of a highly conductive pathway using a transparent conducting oxide （TCO）, coupled with a high surface area, by introducing branching and low interfacial resistance via an epitaxial relationship. An examination of various morphologies （dot, rod, and lamella shape） of TiO2 reveals that the rod-shaped TiO2-Sb：SnO2 is a more effective structure than the others. A photoelectrode fabricated using optimized CdS--TiO2-Sb：SnO2 produces a photocurrent density of 7.75 mA/cm2 at 0.4 V versus a reversible hydrogen electrode. These results demonstrate that constructing a branched heterostructure based on TCO can realize highperformance photoelectrochemical devices.展开更多
Nano transparent conducting titanium-zinc oxide(Ti-Zn O) thin films were prepared on glass substrates by radio frequency(RF) magnetron sputtering technique. The deposited films are characterized by X-ray diffraction(X...Nano transparent conducting titanium-zinc oxide(Ti-Zn O) thin films were prepared on glass substrates by radio frequency(RF) magnetron sputtering technique. The deposited films are characterized by X-ray diffraction(XRD), four-probe meter and UV-visible spectrophotometer. The effects of Ti-doping content on the structural, optical and electrical properties of the films are investigated. The XRD results show that the obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the(002) crystallographic direction. The structural and optoelectronic characteristics of the deposited films are subjected to the Ti-doping content. The Ti-Zn O sample fabricated with the Ti-doping content of 3%(weight percentage) possesses the best crystallinity and optoelectronic performance, with the highest degree of preferred(002) orientation of 99.87%, the largest crystallite size of 83.2 nm, the minimum lattice strain of 6.263×10^(-4), the highest average visible transmittance of 88.8%, the lowest resistivity of 1.18×10^(-3) Ω·cm and the maximum figure of merit(FOM) of 7.08×10~3 Ω^(-1)·cm^(-1). Furthermore, the optical bandgaps of the films are evaluated by extrapolation method and observed to be an increasing tendency with the increase of the Ti-doping content.展开更多
In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current...In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As aresult, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafersample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs canbe promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapidand cost-effective.展开更多
文摘Harvesting solar energy to produce clean hydrogen from photoelectrolysis of water presents a valuable opportunity to find alternatives for fossil fuels. Three- dimensional nanoarchitecturing techniques can afford enhanced photoelectrochemical properties by improving geometrical and structural effects. Here, we report quantum-dot sensitized TiO2-Sb：SnO2 heterostructures as a model electrode to enable the optimization of the structural effects through the creation of a highly conductive pathway using a transparent conducting oxide （TCO）, coupled with a high surface area, by introducing branching and low interfacial resistance via an epitaxial relationship. An examination of various morphologies （dot, rod, and lamella shape） of TiO2 reveals that the rod-shaped TiO2-Sb：SnO2 is a more effective structure than the others. A photoelectrode fabricated using optimized CdS--TiO2-Sb：SnO2 produces a photocurrent density of 7.75 mA/cm2 at 0.4 V versus a reversible hydrogen electrode. These results demonstrate that constructing a branched heterostructure based on TCO can realize highperformance photoelectrochemical devices.
基金supported by the National Natural Science Foundation of China(Nos.11504435 and 11504436)the Natural Science Foundation of Hubei(Nos.2013CFA0522014CFA051 and 2015CFB364)
文摘Nano transparent conducting titanium-zinc oxide(Ti-Zn O) thin films were prepared on glass substrates by radio frequency(RF) magnetron sputtering technique. The deposited films are characterized by X-ray diffraction(XRD), four-probe meter and UV-visible spectrophotometer. The effects of Ti-doping content on the structural, optical and electrical properties of the films are investigated. The XRD results show that the obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the(002) crystallographic direction. The structural and optoelectronic characteristics of the deposited films are subjected to the Ti-doping content. The Ti-Zn O sample fabricated with the Ti-doping content of 3%(weight percentage) possesses the best crystallinity and optoelectronic performance, with the highest degree of preferred(002) orientation of 99.87%, the largest crystallite size of 83.2 nm, the minimum lattice strain of 6.263×10^(-4), the highest average visible transmittance of 88.8%, the lowest resistivity of 1.18×10^(-3) Ω·cm and the maximum figure of merit(FOM) of 7.08×10~3 Ω^(-1)·cm^(-1). Furthermore, the optical bandgaps of the films are evaluated by extrapolation method and observed to be an increasing tendency with the increase of the Ti-doping content.
基金supported by the Natural Science Foundation of Guangdong Province, China (Grant Nos. 8251063101000007, 10151063101000009 and 9451063101002082)the Scientific & Technological Plan of Guangdong Province (Grant Nos. 2008B010200004, 2010B010600030 and 2009B011100003)+2 种基金the National Natural Science Foundation of China(Grant Nos. 61078046 and 10904042)the Key Project of Chinese Ministryof Education (Grant No. 210157)the Scientific & Technological Project of Education Department of Hubei Province (Grant No. D20101104)
文摘In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As aresult, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafersample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs canbe promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapidand cost-effective.
