The ever-decreasing size of transistors requires effectively electrostatic control over ultra-thin semiconductor body.Rational design of the gate configuration can fully persevere the intrinsic property of two-dimensi...The ever-decreasing size of transistors requires effectively electrostatic control over ultra-thin semiconductor body.Rational design of the gate configuration can fully persevere the intrinsic property of two-dimensional(2 D)semiconductors.Here we design and demonstrate a 2 D Mo S_(2) transistor with omega-shaped gate,in which the local gate coupling is enhanced by the non-planar geometry.The omega-shaped non-planar transistors exhibit a high current of 0.89 A/lm and transconductance of32.7 l S/lm.The high performance and desirable current saturation promise the construction of robust logic gate.The inverters show a voltage gain of 26.6 and an ideal total margin nearly 89%.We also assemble NOT-AND(NAND)gate on an individual Mo S_(2) flake,and the constructed NAND gate demonstrates the universal functionality of the transistors as well.This work provides an alternative strategy to fully take the advantages of 2 D materials for high-performance field-effect transistors.展开更多
基金supported by the National Key Research and Development Program of China(2018YFA0703704 and2018YFB0406603)China National Funds for Distinguished Young Scientists(61925403)+2 种基金the National Natural Science Foundation of China(61851403,51872084,61704052,61811540408,and61704051)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000)in partly by the Key Research and Development Plan of Hunan Province(2018GK2064)。
文摘The ever-decreasing size of transistors requires effectively electrostatic control over ultra-thin semiconductor body.Rational design of the gate configuration can fully persevere the intrinsic property of two-dimensional(2 D)semiconductors.Here we design and demonstrate a 2 D Mo S_(2) transistor with omega-shaped gate,in which the local gate coupling is enhanced by the non-planar geometry.The omega-shaped non-planar transistors exhibit a high current of 0.89 A/lm and transconductance of32.7 l S/lm.The high performance and desirable current saturation promise the construction of robust logic gate.The inverters show a voltage gain of 26.6 and an ideal total margin nearly 89%.We also assemble NOT-AND(NAND)gate on an individual Mo S_(2) flake,and the constructed NAND gate demonstrates the universal functionality of the transistors as well.This work provides an alternative strategy to fully take the advantages of 2 D materials for high-performance field-effect transistors.
