Partial discharge detection in power transformers is discussed using a new approach that exploit the broad band of the Rogowski coils and the potential of two signal processing tools： discrete wavelet transform and e...Partial discharge detection in power transformers is discussed using a new approach that exploit the broad band of the Rogowski coils and the potential of two signal processing tools： discrete wavelet transform and empirical mode decomposition. Detecting and analyzing incipient activities of partial discharge can provide useful information to diagnostics and prognostics about transformer insulation. So, partial discharge signals embedded in the electric current at ground conductor are measured using the Rogowski coil. These signals are submitted to noise suppression and the partial discharges waveforms are extracted through different ways： using discrete wavelet transform and using empirical mode decomposition. The comparison of these two methods show that the extraction with discrete wavelet transform results in a faster and simpler algorithm than the empirical mode decomposition. But this one produces more precise waveforms due its adaptive characteristic.展开更多
The effects of total ionizing dose radiation on direct current （DC） and small-signal radio frequency （RF） performance of multi-finger RF partial deplete silicon-on-insulator lateral double diffused MOS （PDSOI LD...The effects of total ionizing dose radiation on direct current （DC） and small-signal radio frequency （RF） performance of multi-finger RF partial deplete silicon-on-insulator lateral double diffused MOS （PDSOI LDMOS） transistors are investigated. The radiation response of the LDMOS transistors with different device structures is characterized for an equivalent gamma dose up to 1Mrad（Si） at room temperature. The front and back gate threshold voltages, off-state leak- age, transconductance, and output characteristics are measured before and after radiation, and the results show a significant degradation of DC performance. Moreover, high frequency measurements for the irradiated transistors indicate remarkable declines of S-parameters, cutoff frequency, and maximum oscillation frequency to 1Mrad（Si） exposure levels. Compared to the transistors with the BTS contact structure,the transistors with the LBBC contact do not show its excellent DC radiation hardness when the transistors operate at alternating current （AC） mode.展开更多
文摘Partial discharge detection in power transformers is discussed using a new approach that exploit the broad band of the Rogowski coils and the potential of two signal processing tools： discrete wavelet transform and empirical mode decomposition. Detecting and analyzing incipient activities of partial discharge can provide useful information to diagnostics and prognostics about transformer insulation. So, partial discharge signals embedded in the electric current at ground conductor are measured using the Rogowski coil. These signals are submitted to noise suppression and the partial discharges waveforms are extracted through different ways： using discrete wavelet transform and using empirical mode decomposition. The comparison of these two methods show that the extraction with discrete wavelet transform results in a faster and simpler algorithm than the empirical mode decomposition. But this one produces more precise waveforms due its adaptive characteristic.
基金National Nature Science Foundation of China(No.60576051)~~
文摘The effects of total ionizing dose radiation on direct current （DC） and small-signal radio frequency （RF） performance of multi-finger RF partial deplete silicon-on-insulator lateral double diffused MOS （PDSOI LDMOS） transistors are investigated. The radiation response of the LDMOS transistors with different device structures is characterized for an equivalent gamma dose up to 1Mrad（Si） at room temperature. The front and back gate threshold voltages, off-state leak- age, transconductance, and output characteristics are measured before and after radiation, and the results show a significant degradation of DC performance. Moreover, high frequency measurements for the irradiated transistors indicate remarkable declines of S-parameters, cutoff frequency, and maximum oscillation frequency to 1Mrad（Si） exposure levels. Compared to the transistors with the BTS contact structure,the transistors with the LBBC contact do not show its excellent DC radiation hardness when the transistors operate at alternating current （AC） mode.
