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酞菁铜化合物LB膜的制备及结构形态研究 被引量:4
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作者 袁婕 张兴堂 +3 位作者 蒋晓红 李蕴才 黄亚彬 杜祖亮 《物理化学学报》 SCIE CAS CSCD 北大核心 2005年第9期983-987,共5页
利用LB技术研究了带有4个长碳氢链的酞菁铜化合物(CuC12Pc)的单分子膜及它与十八胺(ODA)、二十酸(AA)的混合LB膜的聚集结构形态.结果表明这种酞菁铜化合物在气液界面上可以形成比较稳定有序的双层Langmuir膜,且可以转移质量较好的多层LB... 利用LB技术研究了带有4个长碳氢链的酞菁铜化合物(CuC12Pc)的单分子膜及它与十八胺(ODA)、二十酸(AA)的混合LB膜的聚集结构形态.结果表明这种酞菁铜化合物在气液界面上可以形成比较稳定有序的双层Langmuir膜,且可以转移质量较好的多层LB膜.利用原子力显微镜(AFM)研究了酞菁铜分子的聚集体结构,发现CuC12Pc/AA混合膜表现为网状的聚集结构,而CuC12Pc/ODA混合膜形成长岛颗粒状聚集,并结合UV-Vis吸收光谱讨论了酞菁铜分子形成不同聚集结构的原因. 展开更多
关键词 酞菁铜化合物 LB技术 AFM 聚集体
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Studying the operation characteristics and structure of vertical channel copper-phthalocyanine organic semiconductor transistor
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作者 朱敏 宋明歆 +4 位作者 桂太龙 王喧 殷景华 王东兴 赵洪 《Journal of Harbin Institute of Technology(New Series)》 EI CAS 2005年第4期378-382,共5页
The creation of Au/CuPe/Al/CuPc/strueture is a perpendicular type electricity found in the channel of organic static induction transistor. In the following we analyze transistor operation characteristics and machine s... The creation of Au/CuPe/Al/CuPc/strueture is a perpendicular type electricity found in the channel of organic static induction transistor. In the following we analyze transistor operation characteristics and machine structural relation. The results express that the transistor drives the voltage low and has no-saturation currentvoltage characteristics. Its operation characteristics are dependant on gate bias voltage and the construction of the aluminum eleetrode. The vertical ehannel of organic static induction transistor (OSIT) , with structure of Au/CuPc/Al/CuPc/ Cu, has been determined. According to the test results, the relation of its operation characteristics aud device structure was analyzed. The results show that this transistor has a low driving voltage and unsaturation Ⅰ-Ⅴ characteristies. Its operation characteristics are dependant on gate bias voltage and the structure of the aluminum electrode. 展开更多
关键词 thin film transistor copper phthalocyanine organic semiconductor
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