Y2002-63196-359 0311943碳化硅门电路关断晶闸管(GTOs):静态与动态特性=Silicon carbide GTOs:static and dynarnic characterization[会,英]/Elasser,A.& Park,J.//2001 IEEE IndustryApplications Conference,Vol.1 of 4.—359~...Y2002-63196-359 0311943碳化硅门电路关断晶闸管(GTOs):静态与动态特性=Silicon carbide GTOs:static and dynarnic characterization[会,英]/Elasser,A.& Park,J.//2001 IEEE IndustryApplications Conference,Vol.1 of 4.—359~364(ME)Y2002-63209-175 0311944硅电力半导体器件的电压控制能力和关断方法=Voltage handling capability and termination techniques ofsilicon power samiconductor devices[会,英]/Charitat,G.//2001 IEEE Proceedings of the 2001 Bipolar/BiC-MOS Gircuits and Technology Meeting.—175~183(TE)展开更多
文摘Y2002-63196-359 0311943碳化硅门电路关断晶闸管(GTOs):静态与动态特性=Silicon carbide GTOs:static and dynarnic characterization[会,英]/Elasser,A.& Park,J.//2001 IEEE IndustryApplications Conference,Vol.1 of 4.—359~364(ME)Y2002-63209-175 0311944硅电力半导体器件的电压控制能力和关断方法=Voltage handling capability and termination techniques ofsilicon power samiconductor devices[会,英]/Charitat,G.//2001 IEEE Proceedings of the 2001 Bipolar/BiC-MOS Gircuits and Technology Meeting.—175~183(TE)